Abstract: A method involves forming a first surface on a substrate, applying to the first surface a layer of a material having a thickness less than approximately 10 microns, and precision polishing the layer of material to form a precision optical second surface on a side of the layer opposite from the substrate. A different aspect involves an apparatus that includes a substrate having a first surface, and a layer provided on the surface and having a thickness less than approximately 10 microns, the layer having on a side thereof opposite from the substrate a polished second surface with an RMS surface roughness less than approximately 10 Angstroms.

Abstract: A method for making a film having an array of cobalt selenide nanowires including: providing an aluminum substrate; anodizing the aluminum substrate to form anodized aluminum including an aluminum oxide layer having a plurality of pores therein on a surface of the aluminum substrate; preparing an electrodeposition composition including a source of cobalt ions and a source of selenite ions; contacting the anodized aluminum with the electrodeposition composition; and applying AC current to the anodized aluminum for a sufficient duration to electrodeposit cobalt selenide into the pores to form a film having an array of oriented cobalt selenide nanowires. According to a different aspect, a film has an aluminum substrate; an oxide layer having a plurality of pores therein on a surface of the aluminum substrate; and an array of cobalt selenide nanowires disposed in the pores.

Abstract: A method involves forming a first surface on a substrate, applying to the first surface a layer of a material having a thickness less than approximately 10 microns, and precision polishing the layer of material to form a precision optical second surface on a side of the layer opposite from the substrate. A different aspect involves an apparatus that includes a substrate having a first surface, and a layer provided on the surface and having a thickness less than approximately 10 microns, the layer having on a side thereof opposite from the substrate a polished second surface with an RMS surface roughness less than approximately 10 Angstroms.

Abstract: A method for making a film having an array of cobalt selenide nanowires including: providing an aluminum substrate; anodizing the aluminum substrate to form anodized aluminum including an aluminum oxide layer having a plurality of pores therein on a surface of the aluminum substrate; preparing an electrodeposition composition including a source of cobalt ions and a source of selenite ions; contacting the anodized aluminum with the electrodeposition composition; and applying AC current to the anodized aluminum for a sufficient duration to electrodeposit cobalt selenide into the pores to form a film having an array of oriented cobalt selenide nanowires. According to a different aspect, a film has an aluminum substrate; an oxide layer having a plurality of pores therein on a surface of the aluminum substrate; and an array of cobalt selenide nanowires disposed in the pores.

Abstract: A layer (20) on a composite (22) of aluminum (26) and a non-conductive material (24) and a method of forming the layer (20) are described. A first embodiment comprises a method of forming a composite layer (101) comprising combining a non-conductive material (24) and aluminum (26) to form a composite (22), and electrochemically oxidizing (103) the aluminum (26) on a surface of the composite (22) to form aluminum oxide (28). In a particular embodiment, the non-conductive material (24) is diamond. In other particular embodiments, the step of combining (101) the non-conductive material (24) and aluminum (26) comprises at least one of cold spraying and electrolytic codeposition. In another particular embodiment, the oxidizing step (103) comprises anodizing. In yet another particular embodiment, the oxidizing step (103) comprises hard anodizing.