Abstract: The present invention concerns an optoelectronic device D such as a Semiconductor optical amplifier (SOA) working in a continuous wave condition and able to amplify high frequencies optical signals. The optoelectronic device D comprise an active zone I (such as SOA) with a slab (3) in a direct bias working in a continuous wave and a taper zone (II) connected to the active zone (I).

Abstract: A distributed feedback laser (DFB) is a type of laser diode in which the active region of the device contains a periodically structured element or diffraction grating, which may include periodic changes in refractive index that cause reflection back into the laser cavity. Conventional DFB lasers used in optical networks may exploit either loss-modulated or index-modulated gratings. In the case of complex-coupling, index-modulated and loss-modulated gratings may be combined together.

Abstract: The optoelectronic device includes a matrix of optoelectronic components including semiconductor optical amplifiers SOAs, the semiconductor optical amplifiers SOAs containing an active layer of gallium nitride GaN having multiple InGaN/GaAsN or InGaN/AlGaN quantum wells on a substrate of p-doped gallium nitride and covered with a layer of n-doped gallium nitride. The p-doped gallium nitride GaN substrate forms a column of p-GaN covered with a layer of an insulator in biocompatible material. The device can include a matrix having multiple electronic components of different heights. The optoelectronic component can be a photodiode or a semiconductor optical amplifier SOA. This optoelectronic device can be used in epiretinal or subretinal prostheses. A single epiretinal or subretinal prosthesis can include a matrix of photodiodes and a matrix of semiconductor optical amplifiers SOAs.

Abstract: The optoelectronic device includes a matrix of optoelectronic components including semiconductor optical amplifiers SOAs, the semiconductor optical amplifiers SOAs containing an active layer of gallium nitride GaN having multiple InGaN/GaAsN or InGaN/AlGaN quantum wells on a substrate of p-doped gallium nitride and covered with a layer of n-doped gallium nitride. The p-doped gallium nitride GaN substrate forms a column of p-GaN covered with a layer of an insulator in biocompatible material. The device can include a matrix having multiple electronic components of different heights. The optoelectronic component can be a photodiode or a semiconductor optical amplifier SOA. This optoelectronic device can be used in epiretinal or subretinal prostheses. A single epiretinal or subretinal prosthesis can include a matrix of photodiodes and a matrix of semiconductor optical amplifiers SOAs.

Abstract: The optoelectronic device includes a matrix of optoelectronic components including semiconductor optical amplifiers SOAs, the semiconductor optical amplifiers SOAs containing an active layer of gallium nitride GaN having multiple InGaN/GaAsN or InGaN/AlGaN quantum wells on a substrate of p-doped gallium nitride and covered with a layer of n-doped gallium nitride. The p-doped gallium nitride GaN substrate forms a column of p-GaN covered with a layer of an insulator in biocompatible material. The device can include a matrix having multiple electronic components of different heights. The optoelectronic component can be a photodiode or a semiconductor optical amplifier SOA. This optoelectronic device can be used in epiretinal or subretinal prostheses. A single epiretinal or subretinal prosthesis can include a matrix of photodiodes and a matrix of semiconductor optical amplifiers SOAs.

Abstract: A device for transmitting and/or modulating in-phase and quadrature optical signals generated by an optical source. This device includes modulators each arranged for modulating intensity of optical signals depending on commands, and at least three main multi-mode interferometers set in series and arranged for transforming in combination a received optical signal with an initial phase state into a final optical signal with a final phase state differing from this initial phase state by an accumulated phase shift chosen from a group including 0, ?/2, ? and 3?/2 and depending from the intensity modulations carried out by the modulators.

Abstract: A device for transmitting and/or modulating in-phase and quadrature optical signals generated by an optical source. This device includes modulators each arranged for modulating intensity of optical signals depending on commands, and at least three main multi-mode interferometers set in series and arranged for transforming in combination a received optical signal with an initial phase state into a final optical signal with a final phase state differing from this initial phase state by an accumulated phase shift chosen from a group including 0, ?/2, ? and 3?/2 and depending from the intensity modulations carried out by the modulators.

Abstract: In one embodiment, the optical transmitter is configured to generate a plurality of optical signals at a corresponding plurality of different wavelengths multiplexed onto an output waveguide. The transmitter includes a first and second converter including different first and second active materials configured to emit light at a first and a different second wavelength, respectively. Furthermore, the transmitter includes a first converter waveguide traversing the first and second material of the first and second converters. The second material is at an output end of the first converter waveguide and the first material is at an input end, upstream of the output end, of the first converter waveguide. The second active material is transparent to the light at the first wavelength and the output end of the first converter waveguide leads to the output waveguide.