Abstract: A micro-lithographic projection exposure system comprises an illumination unit and a projection lens with at least one element which is penetrated at least in regions by a temperature-control fluid line provided for conducting a temperature-control fluid for controlling the temperature of the element. The temperature-control fluid line is connected to a temperature-control fluid storage container. A temperature-control element for controlling the temperature of the temperature-control fluid is provided on or in the temperature-control fluid line. At least two of the elements are independently penetrated by a respective separate at least one of temperature-control fluid lines, or at least two different regions of the at least one element are penetrated independently by a respective separate at least one of the temperature-control fluid lines, or at least two of the elements are penetrated by the temperature-control fluid line. A corresponding method is provided.

Abstract: A projection exposure apparatus for semiconductor lithography includes: a light source for generating optical used radiation by which structures arranged on a reticle can be imaged onto a wafer; a plurality of optical elements for guiding and manipulating the used radiation; and a plurality of position sensors for determining the position of at least some of the optical elements. At least some of the position sensors are arranged on a measurement structure that is at least partially decoupled mechanically and/or thermally from the further components of the projection exposure apparatus. The measurement structure has at least two mechanically decoupled substructures. The first substructure has a lower coefficient of thermal expansion than the second substructure. The second substructure has a greater stiffness than the first substructure.

Abstract: A projection exposure apparatus for semiconductor lithography includes: a light source for generating optical used radiation by which structures arranged on a reticle can be imaged onto a wafer; a plurality of optical elements for guiding and manipulating the used radiation; and a plurality of position sensors for determining the position of at least some of the optical elements. At least some of the position sensors are arranged on a measurement structure that is at least partially decoupled mechanically and/or thermally from the further components of the projection exposure apparatus. The measurement structure has at least two mechanically decoupled substructures. The first substructure has a lower coefficient of thermal expansion than the second substructure. The second substructure has a greater stiffness than the first substructure.