Abstract: A memory circuit including cells connected in rows and in columns, each cell including a programmable resistive element and a control transistor, the memory circuit further including a control circuit capable of, during a cell programming phase: applying a first voltage to a control conductive track of the column including the cell; applying a second voltage to the first control conductive track of the row including the cell; applying a third voltage capable of turning on the cell control transistor to a second row control conductive track including the cell; and applying a fourth voltage capable of turning off the control transistors to the control conductive tracks of columns which do not include the cell.

Abstract: A memory circuit including cells connected in rows and in columns, each cell including a programmable resistive element and a control transistor, the memory circuit further including a control circuit capable of, during a cell programming phase: applying a first voltage to a control conductive track of the column including the cell; applying a second voltage to the first control conductive track of the row including the cell; applying a third voltage capable of turning on the cell control transistor to a second row control conductive track including the cell; and applying a fourth voltage capable of turning off the control transistors to the control conductive tracks of columns which do not include the cell.

Abstract: A memory device having: a cross-point memory array; a current supply circuit adapted to supply a programming current to a selected row line of the array during a programming operation to change the resistive state of a selected memory cell coupled between the selected row line and a selected column line of the array; a leakage current detection circuit coupled to the column lines except the selected column line and adapted to detect leakage currents during the programming operation; and a current limit generation circuit adapted to generate a current limit based on the sum of the leakage currents and on a reference current, and to supply the current limit to the current supply circuit to limit the programming current.

Abstract: A memory device having: a cross-point memory array; a current supply circuit adapted to supply a programming current to a selected row line of the array during a programming operation to change the resistive state of a selected memory cell coupled between the selected row line and a selected column line of the array; a leakage current detection circuit coupled to the column lines except the selected column line and adapted to detect leakage currents during the programming operation; and a current limit generation circuit adapted to generate a current limit based on the sum of the leakage currents and on a reference current, and to supply the current limit to the current supply circuit to limit the programming current.