Abstract: A method and a system for qualifying an integrated circuit according to a parasitic supply peak detector that it contains, including: supply of the integrated circuit to be tested under at least a first voltage; checking of a starting of the circuit; application of at least one first noise peak on the circuit power supply, while respecting an amplitude and time gauge; and comparison of average currents consumed by the circuit before and after the peak.

Abstract: A circuit for detecting noise peaks on the power supply of an electronic circuit, including at least a first transistor having its control terminal connected to a terminal of application of a first potential of a supply voltage of the circuit and having a first conduction terminal connected to a terminal of application of a second potential via at least one first resistive element, the second conduction terminal of the first transistor providing the result of the detection.

Abstract: A one-time programmable memory cell and the programming thereof including a programming transistor which is disposed in series with a polycrystalline silicon programming resistor forming the memory element. The programming is non-destructive with respect to the polycrystalline silicon resistor.

Abstract: A method and a circuit for scrambling the current signature of a load comprising at least one integrated circuit executing digital processings, including supplying at least the integrated circuit from a supply voltage external to the circuit by combining a current provided by a first linear regulator with a current provided by at least one capacitive switched-mode power supply circuit with one or several switched capacitances.

Abstract: A method and a circuit for scrambling the current signature of a load including at least one integrated circuit executing digital processings, including the step of, at least on the load ground side, combining a current absorbed by a first linear regulator with a current absorbed by at least one capacitive switched-mode circuit with one or several switched capacitances.

Abstract: A resistive element controllable to irreversibly decrease its value, including several polysilicon resistors connected in series between two input/output terminals of the resistive lemen; and an assembly of switches, connected to turn the series connection into a parallel association of said resistors between two programming terminals intended to receive a supply voltage.

Abstract: The invention relates to a method and device for the irreversible reduction of the value of an integrated polycrystalline silicon resistor. The inventive method consists in temporarily subjecting the resistor to a stress current which is greater than a current (Im) for which the value of the resistor is maximum.

Abstract: The invention relates to a memory cell with a binary value consisting of two parallel branches. Each of said branches comprises: at least one polycrystalline silicon programming resistor (Rp1, Rp2), which is connected between a first supply terminal (1) and a point or terminal for the differential reading (4, 6) of the memory cell state; and at least one first switch (MNP1, MNP2) which, during programming, connects one of said read terminals to a second supply terminal (2).

Abstract: A circuit for controlling the random character of a bit flow, including an input shift register receiving the bit flow and having its outputs exploited in parallel, at least one element for comparing at least a partial content of the input register with predetermined patterns, a plurality of counters in a number at most equal to the number of predetermined patterns, and an element for detecting the exceeding of at least one threshold by one of the counters, the result of this detection conditioning the state of a word or bit indicative of the random or non-random character of the bit flow.

Abstract: The invention relates to a one-time programmable memory cell and the programming method thereof. Thc invention comprises a programming transistor (MN) which is disposed in series with a polycrystalline silicon programming resistor (Rp) forming the memory element. According to the invention, the programming is non destructive with respect to the polycrystalline silicon resistor.

Abstract: A circuit for controlling the random character of a bit flow, including an input shift register receiving the bit flow and having its outputs exploited in parallel, at least one element for comparing at least a partial content of the input register with predetermined patterns, a plurality of counters in a number at most equal to the number of predetermined patterns, and an element for detecting the exceeding of at least one threshold by one of the counters, the result of this detection conditioning the state of a word or bit indicative of the random or non-random character of the bit flow.

Abstract: An extraction method and an integrated cell for extracting a binary value based on a propagation of an edge of a triggering signal in two electric paths, including across two voltage supply terminals: two parallel branches each including, in series, a resistor for differentiating the electric paths; a read transistor, the junction point of the resistor and of the read transistor of each branch defining an output terminal of the cell, and the gate of the read transistor of each branch being connected to the output terminal of the other branch; and a selection transistor.

Abstract: The forming of an integrated circuit including at least one element of electronic protection of the circuit formed of at least one switch for short-circuiting supply conductors arranged in a rail, the switch being integrated in the rail, under said conductors.

Abstract: A resistive element controllable to irreversibly decrease its value, comprising: several polysilicon resistors associated in series between two input/output terminals of the resistive element; and an assembly of switches, connected to turn the series association into a parallel association of said resistors between two programming terminals intended to receive a supply voltage.

Abstract: An integrated cell for extracting a binary value based on a value difference between two resistors values, comprising: connection means for a binary reading of the sign of the difference between said resistors; and connection means for a modification of the value of one of said resistors to make said sign of the difference invariable.

Abstract: An extraction method and an integrated cell for extracting a binary value based on a propagation of an edge of a triggering signal in two electric paths, comprising across two voltage supply terminals: two parallel branches each comprising, in series, a resistor for differentiating the electric paths; a read transistor, the junction point of the resistor and of the read transistor of each branch defining an output terminal of the cell, and the gate of the read transistor of each branch being connected to the output terminal of the other branch; and a selection transistor.

Abstract: The forming of an integrated circuit including at least one element of electronic protection of the circuit formed of at least one switch for short-circuiting supply conductors arranged in a rail, the switch being integrated in the rail, under said conductors.

Abstract: A random signal generator uses a folded MOS transistor, whose drain-source current includes a random component, as an electronic noise source. The random signal generator generates a random binary signal from the random component. The invention may be applied, in particular, to smart cards.

Abstract: A device for the regeneration of a clock signal from an external serial bus includes a ring oscillator and counter. The ring oscillator provides n phases of a clock signal. Of these n phases, one phase is used as a reference and is applied to the counter. It is thus possible to count the number of entire reference clock signal periods between a first pulse and a second pulse received from the bus. In reading the state of the phases in the oscillator upon reception of the second pulse, a determination is made for a current phase corresponding to the phase delay between the reference clock signal and the second pulse of the bus. By using a regeneration device that also includes a ring oscillator and a counter, it is possible to regenerate the clock signal of the bus with high precision.

Abstract: A device for the regeneration of a clock signal from an external serial bus includes a ring oscillator and counter. The ring oscillator provides n phases of a clock signal. Of these n phases, one phase is used as a reference and is applied to the counter. It is thus possible to count the number of entire reference clock signal periods between a first pulse and a second pulse received from the bus. In reading the state of the phases in the oscillator upon reception of the second pulse, a determination is made for a current phase corresponding to the phase delay between the reference clock signal and the second pulse of the bus. By using a regeneration device that also includes a ring oscillator and a counter, it is possible to regenerate the clock signal of the bus with high precision.