Abstract: The invention relates to a method for checking the quality of a product (1) comprising at least two cardboard portions (2) connected to each other such that a slot (10) extends between the cardboard portions from one side of the product (1) to the opposite side, with the slot (10) being expected to extend perpendicularly with respect to an outer edge of the product (1), comprising the steps of: capturing a 2D image of the slot (10) at one side of the product (1) and of the slot at the opposite side of the product, analyzing the images so as to recognize the slot (10), comparing the positions of the slot of one product at the opposite sides, making a determination whether or not a difference between the positions is within a predefined range of tolerance.

Abstract: The invention relates to a method for checking the quality of a product (1) comprising at least two cardboard portions (2) connected to each other such that a slot (10) extends between the cardboard portions from one side of the product (1) to the opposite side, with the slot (10) being expected to extend perpendicularly with respect to an outer edge of the product (1), comprising the steps of: capturing a 2D image of the slot (10) at one side of the product (1) and of the slot at the opposite side of the product, analyzing the images so as to recognize the slot (10), comparing the positions of the slot of one product at the opposite sides, making a determination whether or not a difference between the positions is within a predefined range of tolerance.

Abstract: An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a semiconductor substrate layer including a first type of semiconductor material. The apparatus also includes a multiplication layer including the first type of semiconductor material disposed proximate to the semiconductor substrate layer. The apparatus also includes an absorption layer having a second type of semiconductor material disposed proximate to the multiplication layer such that the multiplication layer is disposed between the absorption layer and the semiconductor substrate layer. The absorption layer is optically coupled to receive and absorb an optical beam. The apparatus also includes an n+ doped region of the first type of semiconductor material defined at a surface of the multiplication layer opposite the absorption layer.

Abstract: An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a mesa structure defined in a first type of semiconductor. The first type of semiconductor material includes an absorption region optically coupled to receive and absorb an optical beam. The apparatus also includes a planar region proximate to and separate from the mesa structure and defined in a second type of semiconductor material. The planar region includes a multiplication region including a p doped region adjoining an n doped region to create a high electric field in the multiplication region. The high electric field is to multiply charge carriers photo-generated in response to the absorption of the optical beam received in the mesa structure.

Abstract: An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a mesa structure defined in a first type of semiconductor. The first type of semiconductor material includes an absorption region optically coupled to receive and absorb an optical beam. The apparatus also includes a planar region proximate to and separate from the mesa structure and defined in a second type of semiconductor material. The planar region includes a multiplication region including a p doped region adjoining an n doped region to create a high electric field in the multiplication region. The high electric field is to multiply charge carriers photo-generated in response to the absorption of the optical beam received in the mesa structure.

Abstract: An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a semiconductor substrate layer including a first type of semiconductor material. The apparatus also includes a multiplication layer including the first type of semiconductor material disposed proximate to the semiconductor substrate layer. The apparatus also includes an absorption layer having a second type of semiconductor material disposed proximate to the multiplication layer such that the multiplication layer is disposed between the absorption layer and the semiconductor substrate layer. The absorption layer is optically coupled to receive and absorb an optical beam. The apparatus also includes an n+ doped region of the first type of semiconductor material defined at a surface of the multiplication layer opposite the absorption layer.

Abstract: An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor. The first type of semiconductor material has a graded doping concentration of a dopant material within the absorption region. A multiplication region is proximate to and separate from the absorption region. The multiplication region includes a second type of semiconductor material in which there is an electric field. The electric field is to multiply the free charge carriers created in the absorption region. A reflector is disposed proximate to the multiplication region such that the multiplication region is between the absorption region and the reflector. The reflector is to reflect unabsorbed light that reaches the reflector from the absorption region back to the absorption region.

Abstract: An avalanche photodetector (APD) is made from composite semiconductor materials. The absorption region of the APD is formed in a n-type InGaAs layer. The multiplication region of the APD is formed in a p-type silicon layer. The two layers are bonded together. The p-type silicon layer may be supported on an n+ type silicon substrate. A p-n junction formed at the interface between the silicon layer and the substrate. Alternatively, the n-type InGaAs layer may be supported on an InP substrate. In this case, a p-n junction is formed by making n-doped surface regions in the p-type silicon superlayer. In either case, the p-n junction is reverse biased for avalanche multiplication of charge carriers. The maximum of the electric field distribution in the APD under reverse bias operating conditions is located at p-n junction. This maximum is at a distance equal to about the thickness of the p-type silicon layer away from the absorption region.

Abstract: An avalanche photodetector (APD) is made from composite semiconductor materials. The absorption region of the APD is formed in a n-type InGaAs layer. The multiplication region of the APD is formed in a p-type silicon layer. The two layers are bonded together. The p-type silicon layer may be supported on an n+ type silicon substrate. A p-n junction formed at the interface between the silicon layer and the substrate. Alternatively, the n-type InGaAs layer may be supported on an InP substrate. In this case, a p-n junction is formed by making n-doped surface regions in the p-type silicon superlayer. In either case, the p-n junction is reverse biased for avalanche multiplication of charge carriers. The maximum of the electric field distribution in the APD under reverse bias operating conditions is located at p-n junction. This maximum is at a distance equal to about the thickness of the p-type silicon layer away from the absorption region.

Abstract: A planar avalanche photodetector (APD) is fabricated by forming a, for example, InGaAs absorption layer on a p+-type semiconductor substrate, such as InP, and wafer-bonding to the absorption layer a second p-type semiconductor, such as Si, to form a multiplication layer. The layer thickness of the multiplication layer is substantially identical to that of the absorption layer. A region in a top surface of the p-type Si multiplication layer is doped n+-type to form a carrier separation region and a high electric field in the multiplication region. The APD can further include a guard-ring to reduce leakage currents as well as a resonant mirror structure to provide wavelength selectivity. The planar geometry furthermore favors the integration of high-speed electronic circuits on the same substrate to fabricate monolithic optoelectronic transceivers.

Abstract: A planar avalanche photodetector (APD) is fabricated by forming a, for example, InGaAs absorption layer on a p+-type semiconductor substrate, such as InP, and wafer-bonding to the absorption layer a second p-type semiconductor, such as Si, to form a multiplication layer. The layer thickness of the multiplication layer is substantially identical to that of the absorption layer. A region in a top surface of the p-type Si multiplication layer is doped n+-type to form a carrier separation region and a high electric field in the multiplication region. The APD can further include a guard-ring to reduce leakage currents as well as a resonant mirror structure to provide to wavelength selectivity. The planar geometry furthermore favors the integration of high-speed electronic circuits on the same substrate to fabricate monolithic optoelectronic transceivers.

Abstract: A pn-junction in a semiconductor element is made in that, within a zone of a first conductivity type, by means of implantation, a first and second zone of a second conductivity type are formed which are initially separated from each other, with subsequent diffusion processes, as a result of lateral diffusion, the first and second zones combine into a connected well, by means of implantation, a further zone of the first conductivity type is formed which completely overlaps the first zone of the second conductivity type and which is larger than the first zone, and which does not touch the second zone of the second conductivity type.

Abstract: A flame detector with a radiation sensor (1) sensitive in the ultra-violet and/or visible range of the electro-magnetic spectrum, forms from the signal U1 at the output of the radiation sensor, a first signal U2 which is proportional to the direct voltage portion of the signal U1, and a second signal U3 which is proportional to the alternating voltage portion of the signal U1. The output signal UA of the flame detector is formed such that UA=U2−U3. Ignition sparks can thereby be effectively suppressed.

Abstract: The photosensitive semiconductor element according to the invention comprises a substrate 1, an intermediate layer 2 and an outer layer 5, wherein the intermediate layer 2 is at least partially embedded within the substrate 1 and the outer layer 5 is at least partially embedded within the intermediate layer 2 and the intermediate layer 2 and the outer layer 5 form a photosensitive region 22 for the generation of a light-dependent signal R such as for example a photocurrent. In this arrangement the outer layer 5 is divided into mutually spaced regions 11 which are separated by intermediate regions 13 of the intermediate layer 2. The spaced regions 11 of the outer layer then serve for example as the anode 30 of the photosensitive semiconductor element which can be connected to a suitable electronic evaluation arrangement.