Patents by Inventor Alexandre Talbot
Alexandre Talbot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8158495Abstract: Silicon-based single-crystal portions are produced on a surface of a substrate, selectively in zones where a single-crystal material is initially exposed. To do this, a layer is firstly formed over the entire surface of the substrate, using a silicon precursor of the non-chlorinated hydride type, and under suitable conditions so that the layer is a single-crystal layer in the zones of the substrate where a single-crystal material is initially exposed and amorphous outside these zones. The amorphous portions of the layer are then selectively etched so that only the single-crystal portions of the layer remain on the substrate.Type: GrantFiled: April 18, 2007Date of Patent: April 17, 2012Assignee: STMicroelectronics S.A.Inventors: Didier Dutartre, Laurent Rubaldo, Alexandre Talbot
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Patent number: 8159109Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.Type: GrantFiled: August 4, 2010Date of Patent: April 17, 2012Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.Inventors: Nicolas Abelé, Pascal Ancey, Alexandre Talbot, Karim Segueni, Guillaume Bouche, Thomas Skotnicki, Stéphane Monfray, Fabrice Casset
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Patent number: 7892927Abstract: A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.Type: GrantFiled: March 16, 2007Date of Patent: February 22, 2011Assignees: STMicroelectronics SA, STMicroelectronics (Crolles 2) SASInventors: Stephane Monfray, Thomas Skotnicki, Didier Dutartre, Alexandre Talbot
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Patent number: 7858407Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.Type: GrantFiled: November 6, 2008Date of Patent: December 28, 2010Inventors: Nicolas Abelé, Pascal Ancey, Alexandre Talbot, Karim Segueni, Guillaume Bouche, Thomas Skotnicki, Stéphane Monfray, Fabrice Casset
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Publication number: 20100295416Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.Type: ApplicationFiled: August 4, 2010Publication date: November 25, 2010Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.Inventors: Nicolas Abelé, Pascal Ancey, Alexandre Talbot, Karim Segueni, Guillaume Bouche, Thomas Skotnicki, Stéphane Monfray, Fabrice Casset
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Patent number: 7776745Abstract: A method for selectively etching single-crystal silicon-germanium in the presence of single-crystal silicon, including a chemical etch based on hydrochloric acid in gaseous phase at a temperature lower than approximately 700° C.Type: GrantFiled: February 9, 2007Date of Patent: August 17, 2010Assignee: STMicroelectronics S.A.Inventors: Nicolas Loubet, Didier Dutartre, Alexandre Talbot, Laurent Rubaldo
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Patent number: 7622368Abstract: A method for forming a single-crystal semiconductor layer portion above a hollowed area, including growing by selective epitaxy on an active single-crystal semiconductor region a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer, and removing the sacrificial layer. The epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.Type: GrantFiled: February 9, 2007Date of Patent: November 24, 2009Assignee: STMicroelectronics S.A.Inventors: Didier Dutartre, Nicolas Loubet, Alexandre Talbot
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Publication number: 20090152998Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.Type: ApplicationFiled: November 6, 2008Publication date: June 18, 2009Applicants: STMicroelectronics (Crolles) 2 SAS, STMicroelectronics S.A., Commissariat A L'energie AtomiqueInventors: Nicolas Abele, Pascal Ancey, Alexandre Talbot, Karim Segueni, Guillaume Bouche, Thomas Skotnicki, Stephane Monfray, Fabrice Cassett
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Publication number: 20080020532Abstract: A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.Type: ApplicationFiled: March 16, 2007Publication date: January 24, 2008Applicants: STMicroelectronics SA, STMicroelectronics (Crolles 2) SASInventors: Stephane Monfray, Thomas Skotnicki, Didier Dutartre, Alexandre Talbot
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Publication number: 20070254451Abstract: Silicon-based single-crystal portions are produced on a surface of a substrate, selectively in zones where a single-crystal material is initially exposed. To do this, a layer is firstly formed over the entire surface of the substrate, using a silicon precursor of the non-chlorinated hydride type, and under suitable conditions so that the layer is a single-crystal layer in the zones of the substrate where a single-crystal material is initially exposed and amorphous outside these zones. The amorphous portions of the layer are then selectively etched so that only the single-crystal portions of the layer remain on the substrate.Type: ApplicationFiled: April 18, 2007Publication date: November 1, 2007Applicant: STMicroelectronics S.A.Inventors: Didier Dutartre, Laurent Rubaldo, Alexandre Talbot
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Publication number: 20070190754Abstract: A method for forming a single-crystal semiconductor layer portion above a hollowed area, including growing by selective epitaxy on an active single-crystal semiconductor region a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer, and removing the sacrificial layer. The epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.Type: ApplicationFiled: February 9, 2007Publication date: August 16, 2007Applicant: STMicroelectronics S.A.Inventors: Didier Dutartre, Nicolas Loubet, Alexandre Talbot
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Publication number: 20070190787Abstract: A method for selectively etching single-crystal silicon-germanium in the presence of single-crystal silicon, including a chemical etch based on hydrochloric acid in gaseous phase at a temperature lower than approximately 700° C.Type: ApplicationFiled: February 9, 2007Publication date: August 16, 2007Applicant: STMicroelectronics S.A.Inventors: Nicholas Loubet, Didier Dutartre, Alexandre Talbot, Laurent Rubaldo
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Publication number: 20070074652Abstract: A method for low-temperature epitaxy at the surface of at least one plate made of a pure silicon- or silicon alloy (SiGe, SiC, SiGeC . . . )-based material, in a chemical vapor deposition (CVD) system, in particular a rapid thermal (RTCVD) system, which method includes the following steps: loading the plate into the equipment, at a loading temperature, preparing the surface for the deposition of new chemical species, and after preparing the surface, performing the deposition under low-temperature epitaxy conditions (>750° C.), in which method the preparation of the surface includes a step of passivation of the surface by injection of an active gas, or gas mixture.Type: ApplicationFiled: September 14, 2006Publication date: April 5, 2007Inventors: Didier Dutartre, Nicolas Loubet, Alexandre Talbot