Abstract: The present invention relates to an observation system (10) of an environment, the observation system (10) comprising: a sensor (12) forming a synchronous stream of framed data, a first processing chain (14) including: a first reception unit (30) receiving the formed synchronous stream, and a first processing unit (32) comprising a first conversion block (34) converting the synchronous stream into event data, and a first calculation block (36) calculating first data from the event data a second processing chain (16) including a second processing unit (46) receiving a synchronous stream of framed data from the array (18) and the first data and obtaining second data relating to the environment as a function of the synchronous stream and the first data.

Abstract: A data storage circuit includes a matrix array of memory cells. The memory cells are configurable and non-volatile. Each one is intended to operate in either one of two operating configurations; the first operating configuration corresponding to a ferroelectric random-access memory; and the second operating configuration corresponding to a metal-oxide resistive random-access memory. Each memory cell comprises: a stack of thin layers in the following order: a first layer made of an electrically conductive material forming a lower electrode, a second layer made of a dielectric and ferroelectric material and a third layer made of electrically conductive material forming an upper electrode.

Abstract: A computer for executing a computation algorithm involving a digital variable as per at least two operating phases is provided. The computer includes a memory stage having: a first set of memories for storing a first sub-word of each digital variable; with each memory of the first set being non-volatile and having a first read endurance and a first write cyclability; a second set of memories for storing a second sub-word of each digital variable; with each memory of the second set having a second read endurance and a second write cyclability; with the first read endurance being greater than the second read endurance and the first write cyclability being less than the second write cyclability.

Abstract: An artificial neuron for a neuromorphic chip comprises a synapse with resistive memory representative of a synaptic weight. The artificial neuron comprises a read circuit, an integration circuit and a logic circuit interposed between the read circuit and the integration circuit. The read circuit is configured to impose on the synapse a read voltage independent of the membrane voltage and to provide an analogue value representative of the synaptic weight. The logic circuit is configured to generate from the analogue value a pulse having a duration. The integration circuit comprises an accumulator of synaptic weights at the terminals of which a membrane voltage is established and a comparator configured to emit a postsynaptic pulse if a threshold is exceeded by the membrane voltage. Moreover, it comprises a source of current controlled by the pulse to inject a current into the accumulator of synaptic weights during this duration.

Abstract: The invention relates to a device for compensating for the movement of an event-driven sensor (12) in an initial event stream generated by observing an environment, the event-driven sensor (12) generating information representing each initial event in a first space in the form of a pixel address field (20) and a time of generation field of the initial event, the device (16) comprising: a projection unit (34) projecting the initial stream from the first space to a second space, the projected stream being projected events associated with initial events, and generating information representing each projected event in the second space in the form of a pixel address field (20), a characteristic moment field and a value field relating to the set of initial events, and a compensation unit (36) receiving measurements of the movement of the event-driven sensor (12) and applying a compensation technique to the projected flow.

Abstract: An artificial neuron for a neuromorphic chip comprises a synapse with resistive memory representative of a synaptic weight. The artificial neuron comprises a read circuit, an integration circuit and a logic circuit interposed between the read circuit and the integration circuit. The read circuit is configured to impose on the synapse a read voltage independent of the membrane voltage and to provide an analogue value representative of the synaptic weight. The logic circuit is configured to generate from the analogue value a pulse having a duration. The integration circuit comprises an accumulator of synaptic weights at the terminals of which a membrane voltage is established and a comparator configured to emit a postsynaptic pulse if a threshold is exceeded by the membrane voltage. Moreover, it comprises a source of current controlled by the pulse to inject a current into the accumulator of synaptic weights during this duration.

Abstract: A synaptic integration circuit for a neuromorphic chip comprising a resistive memory synapse which has an activation terminal to receive a presynaptic action signal and a propagation terminal intended to be connected to the circuit for transmitting a synaptic output signal which depends on the resistance of the memory. The circuit comprises an accumulator of the synaptic output signal, a comparator configured to emit a postsynaptic spike in case of the crossing of a threshold (Vm) by the accumulated output signal. It further comprises a control unit configured, when a presynaptic action signal is applied on the activation terminal, to impose a conductance modification voltage on the synapse by controlling the application of a postsynaptic action signal (VBLset, VBLreset) on the propagation terminal.

Abstract: An impulse-neuron-type neuromorphic circuit comprises a capacitor (Cmem) having a membrane voltage (Vmem), a first action comparator (1) for comparing the membrane voltage with a first action voltage (Vact, Vthreshold_high), a first regulation comparator (4) for comparing the membrane voltage with a first regulation voltage (Vreg), a device for reinitialising the membrane voltage (3) a register of threshold exceeds (5) and a regulator (2). The regulator is configured: in case of exceeding the first regulation voltage (Vreg Vthreshold_low) by the membrane voltage, to control the device for reinitialising the membrane voltage (3) and modify the register of threshold exceeds (5); and in case of exceeding the first action voltage (Vact Vthreshold_high) by the membrane voltage, to control the device for reinitialising the membrane voltage (3) and query the register of threshold exceeds to decide whether or not to generate an action potential (Spa) on an output of the neuromorphic circuit.

Abstract: An integrated circuit may include a digital output port including a buffer stage that includes subassemblies of MOSFET transistors. One subassembly may include two pull-up transistors having sources connected to a common high voltage, and having drains connected to a common node connected to the output terminal. Another subassembly may include pull-down transistors having sources connected to a common low voltage, and having drains connected to the common node. The pull-up and pull-down transistors are formed in a thin semiconductor layer of an FDSOI substrate. The substrate may include a thick semiconductor layer and an oxide layer separating the thin and thick semiconductor layers. Areas of the thick semiconductor layer facing the pull-up and pull-down transistors may be connected to a circuit configured to vary a threshold voltage of the pull-up and pull-down transistors.

Abstract: An integrated circuit may include a digital output port including a buffer stage that includes subassemblies of MOSFET transistors. One subassembly may include two pull-up transistors having sources connected to a common high voltage, and having drains connected to a common node connected to the output terminal. Another subassembly may include pull-down transistors having sources connected to a common low voltage, and having drains connected to the common node. The pull-up and pull-down transistors are formed in a thin semiconductor layer of an FDSOI substrate. The substrate may include a thick semiconductor layer and an oxide layer separating the thin and thick semiconductor layers. Areas of the thick semiconductor layer facing the pull-up and pull-down transistors may be connected to a circuit configured to vary a threshold voltage of the pull-up and pull-down transistors.

Abstract: A dynamic biasing circuit of the substrate of a MOS power transistor may include a first switch configured to connect the substrate to a current source which forward biases the intrinsic source-substrate diode of the transistor, when the gate voltage of the transistor turns the transistor on. The current source may include a stack of diodes in the same conduction direction as the intrinsic diode between the substrate and a supply voltage.

Abstract: A dynamic biasing circuit of the substrate of a MOS power transistor may include a first switch configured to connect the substrate to a current source which forward biases the intrinsic source-substrate diode of the transistor, when the gate voltage of the transistor turns the transistor on. The current source may include a stack of diodes in the same conduction direction as the intrinsic diode between the substrate and a supply voltage.

Abstract: The invention relates to electronic integrated circuits capable of operating either in active mode or in standby mode and of having, in standby mode, a very low current consumption. According to the invention, the leakage current of a power transistor inserted in series between a supply terminal and an active circuit is controlled by a gate reverse overbias in the following manner: a voltage step-up charge pump generates a gate bias voltage from pulses delivered by an oscillator having its frequency controlled by a current. The control current Ic is the leakage current of a transistor having technological characteristics similar to those of the power transistor. The system optimizes the current consumption in standby mode, the frequency of the oscillator being reduced when the gate is biased so as to minimize the leakage current. The invention is applicable to circuits powered by a battery or a cell (mobile telephones, cameras, portable computers, etc.).

Abstract: The invention relates to electronic integrated circuits capable of operating either in active mode or in standby mode and of having, in standby mode, a very low current consumption. According to the invention, the leakage current of a power transistor inserted in series between a supply terminal and an active circuit is controlled by a gate reverse overbias in the following manner: a voltage step-up charge pump generates a gate bias voltage from pulses delivered by an oscillator having its frequency controlled by a current. The control current Ic is the leakage current of a transistor having technological characteristics similar to those of the power transistor. The system optimizes the current consumption in standby mode, the frequency of the oscillator being reduced when the gate is biased so as to minimize the leakage current. The invention is applicable to circuits powered by a battery or a cell (mobile telephones, cameras, portable computers, etc.).

Abstract: The invention concerns a process and a circuit designed to improve the life duration of electronic field-effect integrated circuit transistors and in particular those with a thin film gate dielectric. According to the invention, an aging measurement tS is supplied by measuring the charge or discharge time at a reference voltage VREF of the gate of a field effect transistor T1, previously pre-charged to a predefined test voltage VP, and brought to high impedance. Depending on the aging measurement obtained, the operational voltage measurement conditions of the transistor can be maintained or modified to reduce the stress applied to the dielectric.

Abstract: The invention relates to electronic integrated circuits capable of operating either in active mode or in standby mode and to have, in standby mode, a very low current consumption. According to the invention, the leakage current of a power transistor inserted in series between a supply terminal and an active circuit is controlled by a gate reverse overbias in the following manner: a first reference transistor, and a second reference transistor identical to the first, are biased with the same gate reverse overbias voltage as the power transistor, the first transistor having its source linked to the supply terminal, and the second reference transistor having its source linked to its drain. The leakage currents in these two transistors are compared, and it is considered that the optimal bias of the gate is obtained when the leakage currents are equal. Applications to circuits supplied by a battery or a cell (portable telephones, cameras, portable computers, etc.).

Abstract: The invention concerns a process and a circuit designed to improve the life duration of electronic field-effect integrated circuit transistors and in particular those with a thin film gate dielectric. According to the invention, an aging measurement tS is supplied by measuring the charge or discharge time at a reference voltage VREF of the gate of a field effect transistor T1, previously pre-charged to a predefined test voltage VP, and brought to high impedance. Depending on the aging measurement obtained, the operational voltage measurement conditions of the transistor can be maintained or modified to reduce the stress applied to the dielectric.

Abstract: The invention relates to electronic integrated circuits capable of operating either in active mode or in standby mode and to have, in standby mode, a very low current consumption. According to the invention, the leakage current of a power transistor inserted in series between a supply terminal and an active circuit is controlled by a gate reverse overbias in the following manner: a first reference transistor, and a second reference transistor identical to the first, are biased with the same gate reverse overbias voltage as the power transistor, the first transistor having its source linked to the supply terminal, and the second reference transistor having its source linked to its drain. The leakage currents in these two transistors are compared, and it is considered that the optimal bias of the gate is obtained when the leakage currents are equal. Applications to circuits supplied by a battery or a cell (portable telephones, cameras, portable computers, etc.).