Abstract: A semiconductor cell culture device for three-dimensional cell culture comprises: a semiconductor material layer in which a cell culture portion of semiconductor material is defined, wherein the cell culture portion defines an area within the semiconductor material layer surrounded by semiconductor material, wherein the cell culture portion comprises a mesh structure having island structures being interconnected by bridge structures and defining through-pores between the island structures allowing for selective transport of cell constructs, cellular components, proteins or other large molecules through the semiconductor material layer and on opposite sides of the cell culture portion in the semiconductor material layer, and a supporting structure connected to the cell culture portion.

Abstract: A method includes providing a first electrically conductive element over a top surface of a substrate. The method includes measuring at least one parameter indicative of the shape or dimensions of the first electrically conductive element. The method includes simulating the first electrically conductive element and a dielectric wall surrounding the first electrically conductive element for a plurality of wall heights by using the at least one parameter as an input. The method includes for each wall height, computing the maximum current density present at a surface of the first electrically conductive element. The method includes determining, from the maximum current densities, wall height(s) for which the maximum current density is below a threshold. Furthermore, the method includes providing a second electrically conductive element, identical to the first electrically conductive element, surrounded by a wall having a wall height of the determined wall height(s).

Abstract: A device for analysis of cells comprises: an integrated circuit arrangement on a substrate; a dielectric layer formed above the integrated circuit arrangement; a microelectrode array layer formed above the dielectric layer, said microelectrode array layer comprising a plurality of individual electrodes, wherein each electrode is connected to the integrated circuit arrangement through a via in the dielectric layer; and wherein a plurality of longitudinal trenches in the dielectric layer and the microelectrode array layer are for stimulating cell growth on a surface of the device

Abstract: A semiconductor cell culture device for three-dimensional cell culture comprises: a semiconductor material layer in which a cell culture portion of semiconductor material is defined, wherein the cell culture portion defines an area within the semiconductor material layer surrounded by semiconductor material, wherein the cell culture portion comprises a mesh structure having island structures being interconnected by bridge structures and defining through-pores between the island structures allowing for selective transport of cell constructs, cellular components, proteins or other large molecules through the semiconductor material layer and on opposite sides of the cell culture portion in the semiconductor material layer, and a supporting structure connected to the cell culture portion.

Abstract: A device for analysis of cells comprises: an integrated circuit arrangement on a substrate; a dielectric layer formed above the integrated circuit arrangement; a microelectrode array layer formed above the dielectric layer, said microelectrode array layer comprising a plurality of individual electrodes, wherein each electrode is connected to the integrated circuit arrangement through a via in the dielectric layer; and a plurality of longitudinal trenches in the dielectric layer and the microelectrode array layer for stimulating cell growth on a surface of the device.