Patents by Inventor ALEXEI S. LAGUTCHEV

ALEXEI S. LAGUTCHEV has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single photon source
    Patent number: 11971576
    Abstract: A method for producing a single photon source includes lithographically patterning a polymer on top of a plasmonic thin film, functionalizing top surfaces of the plasmonic thin film and the polymer, removing the polymer to form patterned functionalized sites on the top surface of the plasmonic thin film surface, and depositing nanodiamond particles to the patterned functionalized sites.
    Type: Grant
    Filed: December 5, 2022
    Date of Patent: April 30, 2024
    Assignee: Purdue Research Foundation
    Inventors: Urcan Guler, Alexander Kildishev, Vladimir M. Shalaev, Alexei S. Lagutchev, Andrey N. Smolyaninov
  • SINGLE PHOTON SOURCE
    Publication number: 20230101210
    Abstract: A method for producing a single photon source includes lithographically patterning a polymer on top of a plasmonic thin film, functionalizing top surfaces of the plasmonic thin film and the polymer, removing the polymer to form patterned functionalized sites on the top surface of the plasmonic thin film surface, and depositing nanodiamond particles to the patterned functionalized sites.
    Type: Application
    Filed: December 5, 2022
    Publication date: March 30, 2023
    Applicant: Purdue Research Foundation
    Inventors: Urcan Guler, Alexander Kildishev, Vladimir M. Shalaev, Alexei S. Lagutchev, Andrey N. Smolyaninov
  • METHODS OF PRODUCING SINGLE PHOTON EMITTERS ON SUBSTRATES, AND DEVICES, AND CHIPS
    Publication number: 20220406962
    Abstract: Methods of fabricating single photon emitters (SPEs) including nanoindentation of hexagonal boron nitride (hBN) host materials and annealing thereof, devices formed from such methods, and chips with a single photon emitter. A substrate with a layer of hBN is provided. Nanoindentation is performed on the layer of hBN to produce an array of sub-micron indentations in the layer of hBN. The layer of hBN is annealed to activate SPEs near the indentations. Devices include a substrate with an SPE produced in accordance with the methods. Chips include a substrate, an hBN layer, and an SPE including an indentation on the hBN layer, in which the substrate is not damaged at the indentation.
    Type: Application
    Filed: June 21, 2022
    Publication date: December 22, 2022
    Inventors: Xiaohui Xu, Zachariah Olson Martin, Demid Sychev, Alexei S. Lagutchev, Yong Chen, Vladimir Michael Shalaev, Alexandra Boltasseva
  • Single photon source
    Patent number: 11520105
    Abstract: The invention related to single photon emission systems based on nano-diamonds. Single-photon sources have a broad range of applications in quantum communication, quantum computing and quantum metrology.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: December 6, 2022
    Assignee: Purdue Research Foundation
    Inventors: Urcan Guler, Alexander V Kildishev, Vladimir M Shalaev, Alexei S. Lagutchev, Andrey N. Smolyaninov
  • SINGLE PHOTON SOURCE
    Publication number: 20170269300
    Abstract: The invention related to single photon emission systems based on nano-diamonds. Single-photon sources have a broad range of applications in quantum communication, quantum computing and quantum metrology.
    Type: Application
    Filed: November 5, 2015
    Publication date: September 21, 2017
    Applicant: PURDUE RESEARCH FOUNDATION
    Inventors: URCAN GULER, ALEXANDER V. KILDISHEV, VLADIMIR M. SHALAEV, ALEXEI S. LAGUTCHEV, ANDREY N. SMOLYANINOV