Patents by Inventor Alexei Sirbu
Alexei Sirbu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10601201Abstract: A vertical cavity surface emitting laser (VCSEL) array is provided. Each tunable VCSEL includes an output coupling mirror; a high reflectivity mirror; an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror; and a spacer layer disposed between the output coupling mirror and the active cavity material. A tuning cavity is defined within the spacer layer. Each VCSEL further includes a first contact pad and a second contact pad designed to receive a driving voltage; a tuning electrode on a first surface of the output coupling mirror for tuning the emission wavelength to a distinct wavelength.Type: GrantFiled: February 28, 2019Date of Patent: March 24, 2020Assignee: Mellanox Technologies, Ltd.Inventors: Alexei Sirbu, Vladimir Iakovlev, Yuri Berk, Sylvie Rockman, Elad Mentovich
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Patent number: 10461507Abstract: A vertical-cavity surface-emitting laser (VCSEL), substrate emitting VCSEL, and multi-beam emitting device and corresponding manufacturing processes are provided. An example VCSEL comprises a substrate having a first surface and a second surface; an output coupling mirror disposed on the second surface of the substrate; a high reflectivity mirror; and an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror. The active cavity material structure comprises a first current-spreading layer, a second current-spreading layer, an active region disposed between the first current-spreading layer and the second current-spreading layer, and a tunnel junction overgrown by the second current spreading layer, wherein the tunnel junction is disposed adjacent the active region. The VCSEL is configured to emit radiation outward through the first surface of the substrate.Type: GrantFiled: April 4, 2018Date of Patent: October 29, 2019Assignee: Mellanox Technologies, Ltd.Inventors: Alexei Sirbu, Vladimir Iakovlev, Yuri Berk, Elad Mentovich
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Publication number: 20190312413Abstract: A vertical-cavity surface-emitting laser (VCSEL), substrate emitting VCSEL, and multi-beam emitting device and corresponding manufacturing processes are provided. An example VCSEL comprises a substrate having a first surface and a second surface; an output coupling mirror disposed on the second surface of the substrate; a high reflectivity mirror; and an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror. The active cavity material structure comprises a first current-spreading layer, a second current-spreading layer, an active region disposed between the first current-spreading layer and the second current-spreading layer, and a tunnel junction overgrown by the second current spreading layer, wherein the tunnel junction is disposed adjacent the active region. The VCSEL is configured to emit radiation outward through the first surface of the substrate.Type: ApplicationFiled: April 4, 2018Publication date: October 10, 2019Inventors: Alexei Sirbu, Vladimir Iakovlev, Yuri Berk, Elad Mentovich
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Patent number: 10396527Abstract: A vertical-cavity surface-emitting laser (VSCEL) and method for producing a VCSEL are described, the VCSEL including an undercut active region. The active region of the VCSEL is undercut relative to current-spreading layers of the VCSEL, such that a width of a tunnel junction of the VCSEL overgrown by a current spreading layer is less than a width of an active region of the VCSEL, and a width of the active region of the VCSEL is less than a width of the overgrown current-spreading layer, such that the VCSEL including the undercut active region is configured to transmit data at speeds greater than 25 gigabits/second.Type: GrantFiled: June 14, 2017Date of Patent: August 27, 2019Assignee: Mellanox Technologies, Ltd.Inventors: Alexei Sirbu, Vladimir Iakovlev, Yuri Berk, Itshak Kalifa, Elad Mentovich, Sylvie Rockman
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Publication number: 20180366905Abstract: A vertical-cavity surface-emitting laser (VSCEL) and method for producing a VCSEL are described, the VCSEL including an undercut active region. The active region of the VCSEL is undercut relative to current-spreading layers of the VCSEL, such that a width of a tunnel junction of the VCSEL overgrown by a current spreading layer is less than a width of an active region of the VCSEL, and a width of the active region of the VCSEL is less than a width of the overgrown current-spreading layer, such that the VCSEL including the undercut active region is configured to transmit data at speeds greater than 25 gigabits/second.Type: ApplicationFiled: June 14, 2017Publication date: December 20, 2018Inventors: Alexei Sirbu, Vladimir Iakovlev, Yuri Berk, Itshak Kalifa, Elad Mentovich, Sylvie Rockman
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Patent number: 8652936Abstract: A method of forming an optoelectronic device comprising growing a first multi-layer 2 representing a reflector on a first substrate and a second multilayer 4 representing an active region on a second substrate, the first and second substrates being lattice mismatched, fusing the first multi-layer 2 to a third substrate 3, wherein the material of the third substrate 3 is lattice matched with respect to the material of the second multi-layer 4, removing the first substrate to expose the first multi-layer 2, and fusing the first multi-layer to the second multi-layer 4.Type: GrantFiled: July 1, 2010Date of Patent: February 18, 2014Assignee: Ecole Polytechnique Federale de LausanneInventors: Alexei Sirbu, Alexandru Mereuta, Andrei Caliman
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Publication number: 20120134381Abstract: A method of forming an optoelectronic device comprising growing a first multi-layer 2 representing a reflector on a first substrate and a second multilayer 4 representing an active region on a second substrate, the first and second substrates being lattice mismatched, fusing the first multi-layer 2 to a third substrate 3, wherein the material of the third substrate 3 is lattice matched with respect to the material of the second multi-layer 4, removing the first substrate to expose the first multi-layer 2, and fusing the first multi-layer to the second multi-layer 4.Type: ApplicationFiled: July 1, 2010Publication date: May 31, 2012Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNEInventors: Alexei Sirbu, Alexandru Mereuta, Andre Caliman
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Patent number: 6890778Abstract: An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n++ layer of a p++/n++ tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces.Type: GrantFiled: March 6, 2003Date of Patent: May 10, 2005Assignee: EPFLInventors: Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu, Alok Rudra
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Patent number: 6828168Abstract: A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks and a tunable air-gap cavity therebetween. The air-gap cavity is formed within a recess in a spacer above the bottom DBR stack. The top DBR stack is carried by a supporting structure in a region thereof located above a central region of the recess, while a region of the supporting structure above the recess and outside the DBR stack presents a membrane deflectable by the application of a tuning voltage to the device contacts.Type: GrantFiled: March 6, 2003Date of Patent: December 7, 2004Assignee: Ecole Polytechnique Federale de LausanneInventors: Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu, Alok Rudra, Grigore Suruceanu
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Publication number: 20030169786Abstract: A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks anid a tunable air-gap cavity therebetween. The air-gap cavity is formed within a recess in a spacer above the bottom DBR stack. The top DBR stack is carried by a supporting structure in a region thereof located above a central region of the recess, while a region of the supporting structure above the recess and outside the DBR stack presents a membrane deflectable by the application of a tuning voltage to the device contacts.Type: ApplicationFiled: March 6, 2003Publication date: September 11, 2003Inventors: Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu, Alok Rudra, Grigore Suruceanu
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Publication number: 20030162315Abstract: An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n++layer of a p++/n++tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces.Type: ApplicationFiled: March 6, 2003Publication date: August 28, 2003Inventors: Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu, Alok Rudra
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Patent number: 6546029Abstract: A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks and a tunable air-gap cavity therebetween. The air-gap cavity is formed within a recess in a spacer above the bottom DBR stack. The top DBR stack is carried by a supporting structure in a region thereof located above a central region of the recess, while a region of the supporting structure above the recess and outside the DBR stack presents a membrane deflectable by the application of a tuning voltage to the device contacts.Type: GrantFiled: March 15, 2001Date of Patent: April 8, 2003Assignee: Ecole Polytechnique Federale de LausanneInventors: Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alok Rudra, Elyahou Kapon
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Patent number: 6542531Abstract: An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n++ layer of a p++/n++ tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces.Type: GrantFiled: March 15, 2001Date of Patent: April 1, 2003Assignee: Ecole Polytechnique Federale de LausanneInventors: Alexei Sirbu, Vladimir Iakovlev, Alok Rudra, Elyahou Kapon
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Publication number: 20020131458Abstract: A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks and a tunable air-gap cavity therebetween. The air-gap cavity is formed within a recess in a spacer above the bottom DBR stack. The top DBR stack is carried by a supporting structure in a region thereof located above a central region of the recess, while a region of the supporting structure above the recess and outside the DBR stack presents a membrane deflectable by the application of a tuning voltage to the device contacts.Type: ApplicationFiled: March 15, 2001Publication date: September 19, 2002Applicant: Ecole Polytechnique Federale De LausanneInventors: Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alok Rudra, Elyahou Kapon
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Publication number: 20020131464Abstract: An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n++ layer of a p++/n++ tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces.Type: ApplicationFiled: March 15, 2001Publication date: September 19, 2002Applicant: Ecole Polytechnique Federale De LausanneInventors: Alexei Sirbu, Vladimir Iakovlev, Alok Rudra, Elyahou Kapon