Abstract: A dielectric nanolayer capacitor comprises a nanoscale dielectric layer between a cathode layer and an anode layer. When exposed to a high electric field of at least about 0.5 GV/m at a temperature of about 200 K or less, the nanoscale dielectric layer includes an amount of trapped charge sufficient to form a Coulomb barrier for suppressing leakage current. A method of charging a dielectric nanolayer capacitor includes cooling a nanolayer capacitor comprising a nanoscale dielectric layer between a cathode layer and an anode layer to a temperature of about 200 K or less, and applying a high electric field of at least about 0.5 GV/m to the nanolayer capacitor to inject electrons into the nanoscale dielectric layer. While the nanolayer capacitor remains cooled to the temperature, the electrons are trapped in the nanoscale dielectric layer and form a Coulomb barrier to suppress leakage current.

Abstract: A dielectric nanolayer capacitor comprises a nanoscale dielectric layer between a cathode layer and an anode layer. When exposed to a high electric field of at least about 0.5 GV/m at a temperature of about 200 K or less, the nanoscale dielectric layer includes an amount of trapped charge sufficient to form a Coulomb barrier for suppressing leakage current. A method of charging a dielectric nanolayer capacitor includes cooling a nanolayer capacitor comprising a nanoscale dielectric layer between a cathode layer and an anode layer to a temperature of about 200 K or less, and applying a high electric field of at least about 0.5 GV/m to the nanolayer capacitor to inject electrons into the nanoscale dielectric layer. While the nanolayer capacitor remains cooled to the temperature, the electrons are trapped in the nanoscale dielectric layer and form a Coulomb barrier to suppress leakage current.

Abstract: The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

Abstract: The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.