Abstract: A data modeling and analytics platform augments and annotates content captured from a user's online interactions and other documents. The data modeling and analytics platform is performed within a machine learning and artificial intelligence-based processing environment that enables observability, explainability, and data analytics for dynamic information discovery over time within a user library that includes files representing the online interactions and documents containing information of user interest.

Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

Abstract: An Intelligent Data Multiplexer (“IDM”) can be used to interface a plurality of host computers with a semiconductor manufacturing tool. In one embodiment, the IDM has a plurality of host-side ports configured to receive messages from each of the host computers interfaced with the semiconductor manufacturing tool. The IDM also includes a multiplexer configured to multiplex the messages received from the host-side ports. To process possible conflict messages from the host computers, the IDM has a conflict resolve module. The messages are then delivered from the IDM to the semiconductor manufacturing tool through a tool-side port used to connect the semiconductor manufacturing tool to the IDM.

Abstract: A transfer chamber is provided. The transfer chamber has a temperature adjustment plate located in an upper portion of the chamber, a substrate handler located in a lower portion of the chamber, and a rotatable substrate carriage adapted so as to raise and lower between an elevation above a substrate supporting surface of the temperature adjustment plate, and an elevation below a substrate supporting blade of the substrate handler. The rotatable substrate carriage is adapted to transfer a substrate to and from the substrate supporting surfaces of the temperature adjustment plate, and of the substrate handler blade.

Abstract: A method and apparatus are provided for substrate handling. In a first aspect, a temperature adjustment plate is located below a substrate carriage and is configured such that a substrate may be transferred between the temperature adjustment plate and the substrate carriage by lifting and lowering the substrate carriage above and below the top surface of the temperature adjustment plate. The temperature adjustment plate may be configured to heat and/or cool a substrate positioned thereon. Numerous other aspects are provided.

Abstract: A wafer to be processed is loaded into a processing chamber in the same operation in which a processed wafer is unloaded from the processing chamber. As part of this operation, a set of lift pins lifts the processed wafer from a processing platform. A set of storage pins is extended above the lifted wafer and defines an upper wafer transfer position. A robot arm having a stacked set of wafer handling blades is inserted into the processing chamber with a wafer to be processed on the upper blade. The storage pins may lift the wafer to be processed off the upper blade at the same time that the lift pins lower the processed wafer onto the lower blade of the robot arm. The robot arm retracts, withdrawing the processed wafer from the processing chamber. The wafer to be processed may be lowered to the processing platform by the storage pins.

Abstract: A method and apparatus are provided for substrate handling. In a first aspect, a temperature adjustment plate is located below a substrate carriage and is configured such that a substrate may be transferred between the temperature adjustment plate and the substrate carriage by lifting and lowering the substrate carriage above and below the top surface of the temperature adjustment plate. The temperature adjustment plate may be configured to heat and/or cool a substrate positioned thereon. In a second aspect, the substrate carriage is magnetically coupled so as to rotate and/or lift and lower magnetically, thereby reducing particle generation via contact between moving parts (and potential chamber contamination therefrom). In a third aspect, a substrate handler positioned below the substrate carriage is both magnetically coupled and magnetically levitated, providing further particle reduction.

Abstract: A pod opening station moves a wafer-carrying pod horizontally to engage a door of the pod with a pod door receiver. The pod door receiver removes and holds the pod door with no vertical movement thereof. The pod is then moved horizontally in a reverse direction a short distance away from the pod door receiver. Then the pod is moved vertically into alignment with an opening in an interface wall. A wafer handler blade is extended through the opening into the pod. The pod is indexed downwardly to transfer a wafer to the wafer handler blade. The wafer handler blade then retracts to remove the wafer from the pod.

Abstract: The present invention generally provides a rotary wafer carousel and related wafer handler for moving wafers or other workpieces through a processing system, i.e., a semiconductor fabrication tool. Generally, the present invention includes a rotary wafer carousel having a plurality of wafer seats disposed thereon to support one or more wafers. The rotary carousel is preferably disposed through the lid in a transfer chamber opposite the robot which is preferably disposed through the bottom of the transfer chamber. The rotary carousel and the robot cooperate to locate wafers adjacent to process chambers and move wafers into and out of various chambers of the system. The invention improves the throughput of the system by positioning wafers adjacent to the appropriate chamber to reduce the amount of movement required of the robot for transporting wafers between chambers.

Abstract: The present invention generally provides a rotary wafer carousel and related wafer handler for moving wafers or other workpieces through a processing system, i.e., a semiconductor fabrication tool. Generally, the present invention includes a rotary wafer carousel having a plurality of wafer seats disposed thereon to support one or more wafers. The rotary carousel is preferably disposed through the lid in a transfer chamber opposite the robot which is preferably disposed through the bottom of the transfer chamber. The rotary carousel and the robot cooperate to locate wafers adjacent to process chambers and move wafers into and out of various chambers of the system. The invention improves the throughput of the system by positioning wafers adjacent to the appropriate chamber to reduce the amount of movement required of the robot for transporting wafers between chambers.

Abstract: An improved apparatus and method for measuring the concentration of carbon dioxide in respiratory gases. The apparatus is a non-dispersive gas analyzer attached in series with the respiratory airway which is universally compatible with any host system. The analyzer includes a housing which supports a sample cell containing the respiratory gases, and which contains an infrared radiation source encased in shock absorbing material, means for directing the radiation into a collimated beam path through the sample cell, means for splitting the beam path and directing it towards a pair of infrared detectors for measuring the amount of absorption of carbon dioxide in the sample cell. The analyzer is further improved by the use of two heating servos, one for regulating the temperature of the sample cell windows in order to inhibit condensation build-up and one for regulating the ambient temperature surrounding the detectors so as to ensure more accurate measurements.