Abstract: Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a deposition-process material is provided in gaseous form. A layer of the deposition-process material is formed on the substrate by causing condensation or deposition of the gaseous deposition-process material. A selected portion of the layer of deposition-process material is irradiated to modify the deposition-process material in the selected portion.

Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovskite material.

Abstract: Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated during a deposition process, the irradiation being such as to locally drive the deposition process in the selected portion to form a layer of deposited material in a pattern defined by the selected portion. The deposited material is annealed to modify the deposited material.

Abstract: A pick-and-place tool including a plurality of movable holder structures, and a plurality of pick-and-place structures, each holder structure accommodating two or more of the pick-and-place structures, wherein at least one of the two or more pick-and-place structures of a respective holder structure is able to move along a respective holder structure independently from another at least one of the two or more pick-and-place structures of the respective holder structure, and wherein each pick-and-place structure includes a pick-up element configured to pick up a donor component at a donor structure and place the donor component an acceptor structure.

Abstract: A first diffusor configured to receive and transmit radiation has a plurality of layers, each layer arranged to change an angular distribution of EUV radiation passing through it differently. A second diffusor configured to receive and transmit radiation has a first layer and a second layer. The first layer is formed from a first material, the first layer including a nanostructure on at least one surface of the first layer. The second layer is formed from a second material adjacent to the at least one surface of the first layer such that the second layer also includes a nanostructure. The second material has a refractive index that is different to a refractive index of the first layer. The diffusors may be configured to receive and transmit EUV radiation.

Abstract: A particle beam apparatus includes an object table configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; and a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.

Abstract: Methods and apparatuses for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated with electromagnetic radiation having a wavelength of less than 100 nm during a deposition process. Furthermore, an electric field controller is configured to apply an electric field that is oriented so as to force secondary electrons away from the substrate. The irradiation locally drives the deposition process in the selected portion and thereby causes the deposition process to, for example, form a layer of material in a pattern defined by the selected portion.

Abstract: An apparatus for determining information relating to at least one target alignment mark in a semiconductor device substrate. The target alignment mark is initially at least partially obscured by an opaque carbon or metal layer on the substrate. The apparatus includes an energy delivery system configured to emit a laser beam for modifying at least one portion of the opaque layer to cause a phase change and/or chemical change in the at least one portion that increases the transparency of the portion. An optical signal can propagate through the modified portion to determine information relating to the target alignment mark.

Abstract: An inspection system that include a selective deposition tool configured to receive a sample and selectively deposit a material onto the sample, an inspection tool configured to perform an inspection process on the sample provided with the deposited material, and an enclosure configured to enclose the selective deposition tool and the inspection tool.

Abstract: An apparatus for determining information relating to at least one target alignment mark in a semiconductor device substrate. The target alignment mark is initially at least partially obscured by an opaque carbon or metal layer on the substrate. The apparatus includes an energy delivery system configured to emit a laser beam for modifying at least one portion of the opaque layer to cause a phase change and/or chemical change in the at least one portion that increases the transparency of the portion. An optical signal can propagate through the modified portion to determine information relating to the target alignment mark.

Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

Abstract: A pick-and-place tool including a plurality of movable holder structures, and a plurality of pick-and-place structures, each holder structure accommodating two or more of the pick-and-place structures, wherein at least one of the two or more pick-and-place structures of a respective holder structure is able to move along a respective holder structure independently from another at least one of the two or more pick-and-place structures of the respective holder structure, and wherein each pick-and-place structure includes a pick-up element configured to pick up a donor component at a donor structure and place the donor component an acceptor structure.

Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.