Patents by Inventor Alexey R. Kovsh

Alexey R. Kovsh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Edge emitting laser with circular beam
    Patent number: 7031361
    Abstract: An edge emitting laser with circular beam using a low-carrier-mobility diluted nitride semiconductor material for an epitaxy light-emitting layer is disclosed. The low-carrier-mobility material can greatly suppress surface recombination of carriers. The epitaxy structure established on the substrate surface includes, from bottom to top, a bottom cladding layer, a bottom waveguide layer, a light-emitting layer, an upper waveguide layer, an upper cladding layer, and an electrode contact layer. The light-emitting layer is formed from a diluted nitride material. Etching is performed from the epitaxy structure through the light-emitting layer, forming a ridge waveguide that has a large reflective index difference between the light-emitting layer and the dielectric passivation layer.
    Type: Grant
    Filed: December 23, 2003
    Date of Patent: April 18, 2006
    Assignee: Industrial Technology Research Institute
    Inventors: Jyh-Shyang Wang, Gray Lin, Alexey R Kovsh, Daniil Alexandrovich Livshits
  • Resonant cavity device array for WDM application and the fabrication method of the same
    Patent number: 6993055
    Abstract: The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlxGa1-xAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlxGa1-xAs oxide tuning layer contained in the selective oxide structure.
    Type: Grant
    Filed: March 25, 2003
    Date of Patent: January 31, 2006
    Assignee: Industrial Technology Research Institute
    Inventors: Jyh-Shyang Wang, Yi-Tsuo Wu, Nikolai A. Maleev, Alexey V. Sakharov, Alexey R. Kovsh
  • Resonant cavity device array for WDM application and the fabrication method of the same
    Publication number: 20040114645
    Abstract: The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlxGa1-xAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlxGa1-xAs oxide tuning layer contained in the selective oxide structure.
    Type: Application
    Filed: March 25, 2003
    Publication date: June 17, 2004
    Inventors: Jyh-Shyang Wang, Yi-Tsuo Wu, Nikolai A. Maleev, Alexey V. Sakharov, Alexey R. Kovsh