Abstract: A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.

Abstract: A gas-insulated high or medium voltage circuit breaker comprising: a first arcing contact and a second arcing contact, wherein at least one of the two arcing contact is axially movable along a switching axis, wherein during a breaking operation, an arc between the first arcing contact and the second arcing contact is formed in a arcing region; a buffer housing defining a pressurizing volume; a nozzle arranged at a nozzle side of the pressurizing volume, the nozzle defining a channel connected to the pressurizing volume and directed to the arcing region, for blowing an arc extinguishing gas towards the arcing region during the breaking operation, the nozzle comprising a nozzle front face facing towards the interior of the pressurizing volume.

Abstract: A gas-insulated high or medium voltage circuit breaker comprising: a first arcing contact and a second arcing contact, wherein at least one of the two arcing contact is axially movable along a switching axis, wherein during a breaking operation, an arc between the first arcing contact and the second arcing contact is formed in a arcing region; a buffer housing defining a pressurizing volume; a nozzle arranged at a nozzle side of the pressurizing volume, the nozzle defining a channel connected to the pressurizing volume and directed to the arcing region, for blowing an arc extinguishing gas towards the arcing region during the breaking operation, the nozzle comprising a nozzle front face facing towards the interior of the pressurizing volume.

Abstract: A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.

Abstract: A high-voltage DC cable joint including a multi-wall layered construction having individual concentrically arranged layers. The joint includes, from inside to outside, an inner conductive rubber layer, a field grading rubber layer made from a predetermined tailored formulation, an insulating rubber layer and an outer conductive rubber layer. The field grading rubber layer separates and interconnects the conductive rubber layers, and wherein the rubber layers are cross-linked by a by-product-free manufacturing method. The cable joint is preferably made from platinum cured rubbers by moulding process steps. In a preferred embodiment the cable joint is made by injection moulding.

Abstract: A high-voltage DC cable joint including a multi-wall layered construction having individual concentrically arranged layers. The joint includes, from inside to outside, an inner conductive rubber layer, a field grading rubber layer made from a predetermined tailored formulation, an insulating rubber layer and an outer conductive rubber layer. The field grading rubber layer separates and interconnects the conductive rubber layers, and wherein the rubber layers are cross-linked by a by-product-free manufacturing method. The cable joint is preferably made from platinum cured rubbers by moulding process steps. In a preferred embodiment the cable joint is made by injection moulding.

Abstract: An AMF contact for a vacuum interrupter includes concentric opposing contact pieces. The contact pieces include an external electrode shaped like a coil with a plate as a bottom plate of the external electrode, which generates a strong axial magnetic field, and an inner internal electrode as a top electrode carrying the nominal current. To enable the outer electrode to generate the axial magnetic field as requested for an application, a rod is arranged between the top electrode and the bottom plate. A first end of the rod is fixed at a lower side of the top electrode, and a second end of the rod is guided through an opening of the bottom plate. The second end of the rod has an extended head which locks or tightens the rod in a defined axial position. The disclosed embodiments are applicable for standard AMF or TMF (cup) contacts to reinforce them.

Abstract: A vacuum interrupter is provided with a double co-axial contact arrangement in which an inner contact can have a TMF-like or Pin shape arranged within a concentrically cup shaped AMF coil having a single layer or multilayered contact parts at each side, on the side of a fixed contact arrangement as well as on the side of a movable contact arrangement. To provide high conductivity and low resistance, the outer cup shaped contact is made from a double or multiple layer arrangement, wherein at least one layer is made from a hard steel or steel alloy, and at least a second layer is made from material with high thermal conductivity.

Abstract: A high voltage switching device includes a current interruption assembly having at least one vacuum chamber, a fixed contact assembly having a first fixed contact and a second fixed contact positioned inside the vacuum chamber, and first and second movable-contact assemblies including a first movable contact and a second movable contact, respectively. A single mechanism actuates the first and second movable-contact assemblies between a first position and second position. In the first position, the first and second movable contacts are electrically coupled with the first and second fixed contacts, respectively. And in the second position, the first and second moveable contacts are electrically separated the same. The first movable contact and the second movable contact move, along a reference axis, one towards the other or away from the other based on the actuating mechanism.

Abstract: A high voltage switching device includes a current interruption assembly having at least one vacuum chamber, a fixed contact assembly having a first fixed contact and a second fixed contact positioned inside the vacuum chamber, and first and second movable-contact assemblies including a first movable contact and a second movable contact, respectively. A single mechanism actuates the first and second movable-contact assemblies between a first position and second position. In the first position, the first and second movable contacts are electrically coupled with the first and second fixed contacts, respectively. And in the second position, the first and second moveable contacts are electrically separated the same. The first movable contact and the second movable contact move, along a reference axis, one towards the other or away from the other based on the actuating mechanism.