Patents by Inventor Alexey Vasilyevich Khvalkovskiy

Alexey Vasilyevich Khvalkovskiy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for performing self-referenced read in a magnetoresistive random access memory
    Patent number: 10573363
    Abstract: A method of reading information stored in a magnetic memory. In a magnetic memory comprising a magnetic tunnel junction including a first reference layer and a free layer, and a spin orbit active (SO) line adjacent to the first reference layer of the magnetic tunnel junction, first and second currents are passed through the SO line so as to achieve two different directions of a magnetic moment of the first reference layer. Two electrical characteristics of the magnetic tunnel junction are determined, the two electrical characteristics corresponding to the two different directions of the magnetic moment of the first reference layer. These two electrical characteristics are then compared to determine the value of the stored information.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: February 25, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexey Vasilyevich Khvalkovskiy, Vladimir Nikitin, Dmytro Apalkov
  • METHOD AND APPARATUS FOR PERFORMING SELF-REFERENCED READ IN A MAGNETORESISTIVE RANDOM ACCESS MEMORY
    Publication number: 20170162246
    Abstract: A method of reading information stored in a magnetic memory. In a magnetic memory comprising a magnetic tunnel junction including a first reference layer and a free layer, and a spin orbit active (SO) line adjacent to the first reference layer of the magnetic tunnel junction, first and second currents are passed through the SO line so as to achieve two different directions of a magnetic moment of the first reference layer. Two electrical characteristics of the magnetic tunnel junction are determined, the two electrical characteristics corresponding to the two different directions of the magnetic moment of the first reference layer. These two electrical characteristics are then compared to determine the value of the stored information.
    Type: Application
    Filed: March 31, 2016
    Publication date: June 8, 2017
    Inventors: Alexey Vasilyevich KHVALKOVSKIY, Vladimir NIKITIN, Dmytro APALKOV
  • Spintronic oscillator, and use thereof in radiofrequency devices
    Patent number: 9461586
    Abstract: An oscillator is provided including a nanopillar and current injector for injecting a power supply current through the nanopillar, the nanopillar including at least one pattern including first and second layers made from a ferromagnetic material separated from each other by an intermediate layer made from a non-magnetic material. Each of the first and second ferromagnetic layers is prepared such that its remanent magnetic configuration corresponds to a vortex configuration and the polarity of the vortex core of the first layer is opposite the polarity of the vortex core of the second layer. The intermediate layer can allow repellant magnetic coupling between the two vortices of the first and second layers, for a zero intensity of the power supply current and a zero amplitude of the outside magnetic field.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: October 4, 2016
    Assignees: THALES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE PARIS-SUD 11
    Inventors: Nicolas Locatelli, Bruno Marcilhac, Jean-Claude Mage, Vincent Cros, Alexey Vasilyevich Khvalkovskiy, Julie Grollier
  • SPINTRONIC OSCILLATOR, AND USE THEREOF IN RADIOFREQUENCY DEVICES
    Publication number: 20140218122
    Abstract: An oscillator is provided including a nanopillar and current injector for injecting a power supply current through the nanopillar, the nanopillar including at least one pattern including first and second layers made from a ferromagnetic material separated from each other by an intermediate layer made from a non-magnetic material. Each of the first and second ferromagnetic layers is prepared such that its remanent magnetic configuration corresponds to a vortex configuration and the polarity of the vortex core of the first layer is opposite the polarity of the vortex core of the second layer. The intermediate layer can allow repellant magnetic coupling between the two vortices of the first and second layers, for a zero intensity of the power supply current and a zero amplitude of the outside magnetic field.
    Type: Application
    Filed: July 12, 2012
    Publication date: August 7, 2014
    Applicants: THALES, UNIVERSITE PARIS-SUD 11, CENTRE NATIONAL DELA RECHERCHE SCIENTIFIQUE (C.N.R.S)
    Inventors: Nicolas Locatelli, Bruno Marccilhac, Jean-Claude Mage, Vincent Cros, Alexey Vasilyevich Khvalkovskiy, Julie Grollier