Abstract: A photonic integrated circuit including a substrate, a plurality of oxide layers on the substrate, and various passive and active integrated optical components in the plurality of oxide layers. The integrated optical components include silicon nitride waveguides, a Pockets effect phase shifter (e.g., BaTiO3 phase shifter), a superconductive nanowire single photon detector (SNSPD), an optical isolation structure surrounding the SNSPD, a single photon generator, a thermal isolation structure, a heater, a temperature sensor, a photodiode for data communication (e.g., a Ge photodiode), or a combination thereof.

Abstract: A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.

Abstract: A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

Abstract: A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.

Abstract: A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

Abstract: A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

Abstract: A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

Abstract: In one embodiment, a system includes an engine that includes a combustion chamber and a viewing port into the combustion chamber. The engine also includes a camera configured to obtain an image of a flame in the combustion chamber through the viewing port and a controller configured to adjust a parameter of the engine based on the image of the flame.

Abstract: A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.

Abstract: An ozone detection system includes a source of sample gas containing a concentration of ozone and a single optical pathway. The system includes a light source in optical communication with the optical pathway. The system further includes a first airflow passageway for receiving a first sample of gas from the source. The passageway includes a catalytic scrubber to reduce ozone content in the sample gas and passing the reduced ozone gas to a sensor. The system further includes a second airflow passageway for receiving a second sample of gas from the source and passing the gas unaltered to a sensor. The system further includes a sensor for sensing independently the light intensity of the sample of gas received from the first and second passageways. The system further includes a processor for receiving the light intensity data from the sensor and calculating the ozone concentration in the source of sample gas.

Abstract: In one embodiment, a system includes an engine that includes a combustion chamber and a viewing port into the combustion chamber. The engine also includes a camera configured to obtain an image of a flame in the combustion chamber through the viewing port and a controller configured to adjust a parameter of the engine based on the image of the flame.

Abstract: A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.