Patents by Inventor Alexey Y. Kovalgin

Alexey Y. Kovalgin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SELECTIVE DEPOSITION OF TUNGSTEN
    Publication number: 20200343134
    Abstract: A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.
    Type: Application
    Filed: July 10, 2020
    Publication date: October 29, 2020
    Inventors: Alexey Y. Kovalgin, Mengdi Yang, Antonius A. I. Aarnink, Rob A.M. Wolters
  • Selective deposition of tungsten
    Patent number: 10714385
    Abstract: A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: July 14, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Alexey Y. Kovalgin, Mengdi Yang, Antonius A. I. Aarnink, Rob A. M. Wolters
  • SELECTIVE DEPOSITION OF TUNGSTEN
    Publication number: 20180025939
    Abstract: A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.
    Type: Application
    Filed: June 6, 2017
    Publication date: January 25, 2018
    Inventors: Alexey Y. Kovalgin, Mengdi Yang, Antonius A.I. Aarnink, Rob A.M. Wolters
  • SEMICONDUCTOR PROCESSING APPARATUS WITH COMPACT FREE RADICAL SOURCE
    Publication number: 20130337653
    Abstract: A semiconductor processing apparatus (1), comprising: a substrate processing chamber (158), defining a substrate support location (156) at which a generally planar semiconductor substrate (300) is supportable; and at least one free radical source (200), including: a precursor gas source (250); an electric resistance heating filament (244); a sleeve (220) with a central sleeve axis (L), wherein said sleeve defines a reaction space (222) that accommodates the heating filament (244), and wherein said sleeve includes an inlet opening (224) via which the reaction space is fluidly connected to the precursor gas source (250), and an outlet opening (228) via which the reaction space is fluidly connected to the substrate processing chamber (158), said inlet and outlet openings (224, 228) being spaced apart along the central sleeve axis (L).
    Type: Application
    Filed: June 14, 2013
    Publication date: December 19, 2013
    Inventors: Alexey Y. Kovalgin, Antonius A. I. Aarnink