Patents by Inventor Alexis Drouin
Alexis Drouin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240312831Abstract: A method for producing a semiconductor structure comprises: a) provision of a monocrystalline silicon carbide donor substrate and a silicon carbide support substrate; b) production of a useful layer to be transferred, comprising—implanting light species in the donor substrate at a front face, so as to form a damage profile, the profile having a main peak of deep-level defects defining a buried brittle plane and a secondary peak of defects defining a damaged surface layer, and—removing the damaged surface layer by chemical etching and/or chemical mechanical polishing of the front face of the donor substrate, so as to form a new front surface of the donor substrate; c) assembly of donor substrate with the support substrate; and d) separation along the buried fragile plane, leading to the transfer of the useful layer onto the support substrate, so as to form the semiconductor structure.Type: ApplicationFiled: May 25, 2022Publication date: September 19, 2024Inventors: Alexis Drouin, Gweltaz Gaudin, Séverin Rouchier, Walter Schwarzenbach, Julie Widiez, Emmanuel Rolland
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Publication number: 20240072753Abstract: A method for preparing a monodomain thin layer of ferroelectric material comprises: implanting light species in a ferroelectric donor substrate in order to form an embrittlement plane and to define a first layer therein; assembling the donor substrate with a support substrate by means of a dielectric assembly layer; and fracturing the donor substrate at the embrittlement plane. The dielectric assembly layer comprises an oxide having a hydrogen concentration lower than that of the first layer or preventing the diffusion of hydrogen to the first layer, or the dielectric assembly layer comprises a barrier preventing the diffusion of hydrogen to the first layer. A heat treatment of a free face of the first layer is used to diffuse the hydrogen contained therein and cause the multidomain transformation of a surface portion of this first layer, followed by a thinning of the first layer in order to remove the surface portion.Type: ApplicationFiled: March 26, 2020Publication date: February 29, 2024Inventors: Alexis Drouin, Isabelle Huyet, Morgane Logiou
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Publication number: 20230353115Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick laver; introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.Type: ApplicationFiled: July 7, 2023Publication date: November 2, 2023Inventors: Isabelle Huyet, Cèdric Charles-Alfred, Didier Landru, Alexis Drouin
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Patent number: 11742817Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.Type: GrantFiled: June 21, 2018Date of Patent: August 29, 2023Assignee: SoitecInventors: Isabelle Huyet, Cedric Charles-Alfred, Didier Landru, Alexis Drouin
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Patent number: 11595021Abstract: The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.Type: GrantFiled: March 9, 2018Date of Patent: February 28, 2023Assignees: COMMISSARIAT A L'ENERGIE AT TOMIQUE ET AUX ENERGIES ALTERNATIVES, SOITECInventors: Thu Trang Vo, Jean-Sebastien Moulet, Alexandre Reinhardt, Isabelle Huyet, Alexis Drouin, Yann Sinquin
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Publication number: 20220285520Abstract: A process for preparing a thin layer made of ferroelectric material based on alkali metal, exhibiting a determined Curie temperature, transferred from a donor substrate to a carrier substrate by using a transfer technique including implanting light species into the donor substrate in order to produce an embrittlement plane, the thin layer having a first, free face and a second face that is arranged on the carrier substrate. The process comprises a first heat treatment of the transferred thin layer at a temperature higher than the Curie temperature, the thin layer exhibiting a multi-domain character upon completion of the first heat treatment, and introducing, after the first heat treatment, protons into the thin layer, followed by applying a second heat treatment of the thin layer at a temperature lower than the Curie temperature to generate an internal electric field that results in the thin layer being made single domain.Type: ApplicationFiled: April 13, 2022Publication date: September 8, 2022Inventor: Alexis Drouin
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Publication number: 20220247374Abstract: A method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer, the method comprising the following steps: —preparing the support comprising forming the trapping layer on a base substrate, the trapping layer having a hydrogen concentration of less than 10{circumflex over (?)}18 at/cm{circumflex over (?)}; —joining the support to a donor substrate by way of a dielectric layer having a hydrogen concentration of less than 10{circumflex over (?)}20 at/cm{circumflex over (?)}3 or comprising a barrier preventing the diffusion of hydrogen toward the trapping layer or having low hydrogen diffusivity; —removing part of the donor substrate to form the thin layer; the manufacturing method exposing the structure to a temperature below a maximum temperature of 1000° C. The present disclosure also relates to a structure obtained at the end of this method.Type: ApplicationFiled: March 26, 2020Publication date: August 4, 2022Inventors: Isabelle Bertrand, Alexis Drouin, Isabelle Huyet, Eric Butaud, Morgane Logiou
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Patent number: 11309399Abstract: A process for preparing a thin layer made of ferroelectric material based on alkali metal, exhibiting a determined Curie temperature, transferred from a donor substrate to a carrier substrate by using a transfer technique including implanting light species into the donor substrate in order to produce an embrittlement plane, the thin layer having a first, free face and a second face that is arranged on the carrier substrate. The process comprises a first heat treatment of the transferred thin layer at a temperature higher than the Curie temperature, the thin layer exhibiting a multi-domain character upon completion of the first heat treatment, and introducing, after the first heat treatment, protons into the thin layer, followed by applying a second heat treatment of the thin layer at a temperature lower than the Curie temperature to generate an internal electric field that results in the thin layer being made single domain.Type: GrantFiled: February 18, 2019Date of Patent: April 19, 2022Assignee: SoitecInventor: Alexis Drouin
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Publication number: 20210036124Abstract: A process for preparing a thin layer made of ferroelectric material based on alkali metal, exhibiting a determined Curie temperature, transferred from a donor substrate to a carrier substrate by using a transfer technique including implanting light species into the donor substrate in order to produce an embrittlement plane, the thin layer having a first, free face and a second face that is arranged on the carrier substrate. The process comprises a first heat treatment of the transferred thin layer at a temperature higher than the Curie temperature, the thin layer exhibiting a multi-domain character upon completion of the first heat treatment, and introducing, after the first heat treatment, protons into the thin layer, followed by applying a second heat treatment of the thin layer at a temperature lower than the Curie temperature to generate an internal electric field that results in the thin layer being made single domain.Type: ApplicationFiled: February 18, 2019Publication date: February 4, 2021Inventor: Alexis Drouin
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Publication number: 20200389148Abstract: The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.Type: ApplicationFiled: March 9, 2018Publication date: December 10, 2020Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, SOITECInventors: Thu Trang VO, Jean-Sebastien MOULET, Alexandre REINHARDT, Isabelle HUYET, Alexis DROUIN, Yann SINQUIN
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Publication number: 20200186117Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.Type: ApplicationFiled: June 21, 2018Publication date: June 11, 2020Inventors: Isabelle Huyet, Cedric Charles-Alfred, Didier Landru, Alexis Drouin
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Patent number: 10066777Abstract: The invention relates to an assembly comprising: an oil extraction pipe (4) having a thread; and a protector (1) for the thread of the extraction pipe (4), said protector (1) including a body and a thread complementary to that of the extraction pipe (4). The assembly is characterised in that it also comprises an elastomer film (60) affixed to the protector and designed to form a sealed connection between the extraction pipe (4) and the protector (1) when the protector (1) is positioned on the extraction pipe (4).Type: GrantFiled: September 1, 2011Date of Patent: September 4, 2018Assignee: PREMIUM PROTECTORInventors: Alexis Drouin, Thomas Charrue, Philippe Choffart
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Patent number: 9151433Abstract: The invention relates to a protector (1, 7) for an oil extraction pipe. The invention comprises: a hollow, substantially frustoconical connecting segment (2) having a proximal end (21), a distal end (22) and a thread (42) complementary to that of the pipe; and a bumper segment (3) having a connecting end (31) in the extension of the connecting segment (2) and a free end (32), said bumper segment including an internal ring (33) extending in the extension of the connecting segment (2) and an external ring (34) extending coaxially from the connecting segment, defining an internal space between the internal (33) and external (34) rings and increasing the outer diameter of the protector (1, 7). The protector (1, 7) is characterized in that all of the walls thereof having a substantially equal thickness, such that the shape is suitable for production by means of injection, and in that it is produced by means of injection.Type: GrantFiled: July 8, 2011Date of Patent: October 6, 2015Assignee: PREMIUM PROTECTORInventors: Alexis Drouin, Thomas Charrue, Philippe Choffart
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Patent number: 8985156Abstract: The invention relates to an assembly including: an petroleum extraction pipe (2) having a thread at the ends thereof, and two protectors (1) for the thread of said extraction pipe (2), each of the protectors including a tubular body and a thread that is complementary to said thread of the extraction pipe, wherein said assembly is characterized in that it includes at least one module (3) for containing information relating to at least one property of an extraction pipe (2), said module being removably connected to said extraction pipe (2).Type: GrantFiled: April 3, 2012Date of Patent: March 24, 2015Assignee: Premium ProtectorInventors: Alexis Drouin, Thomas Charrue
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Publication number: 20140130928Abstract: The invention relates to an assembly including: an petroleum extraction pipe (2) having a thread at the ends thereof, and two protectors (1) for the thread of said extraction pipe (2), each of the protectors including a tubular body and a thread that is complementary to said thread of the extraction pipe, wherein said assembly is characterized in that it includes at least one module (3) for containing information relating to at least one property of an extraction pipe (2), said module being removably connected to said extraction pipe (2).Type: ApplicationFiled: April 3, 2012Publication date: May 15, 2014Inventors: Alexis Drouin, Thomas Charrue
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Publication number: 20130299037Abstract: The invention relates to a protector (1, 7) for an oil extraction pipe. The invention comprises: a hollow, substantially frustoconical connecting segment (2) having a proximal end (21), a distal end (22) and a thread (42) complementary to that of the pipe; and a bumper segment (3) having a connecting end (31) in the extension of the connecting segment (2) and a free end (32), said bumper segment including an internal ring (33) extending in the extension of the connecting segment (2) and an external ring (34) extending coaxially from the connecting segment, defining an internal space between the internal (33) and external (34) rings and increasing the outer diameter of the protector (1, 7). The protector (1, 7) is characterised in that all of the walls thereof having a substantially equal thickness, such that the shape is suitable for production by means of injection, and in that it is produced by means of injection.Type: ApplicationFiled: July 8, 2011Publication date: November 14, 2013Inventors: Alexis Drouin, Thomas Charrue, Philippe Choffart
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Patent number: 8575010Abstract: The invention relates to a method for fabricating a semiconductor substrate by providing a silicon on insulator type substrate that includes a base, an insulating layer and a first semiconductor layer, doping the first semiconductor layer to thereby obtain a modified first semiconductor layer, and providing a second semiconductor layer with a different dopant concentration than the modified first semiconductor layer over or on the modified first semiconductor layer. With this method, an improved dopant concentration profile can be achieved through the various layers which makes the substrates in particular more suitable for various optoelectronic applications.Type: GrantFiled: February 26, 2009Date of Patent: November 5, 2013Assignee: SoitecInventors: Alexis Drouin, Bernard Aspar, Christophe Desrumaux, Olivier Ledoux, Christophe Figuet
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Publication number: 20130213517Abstract: The invention relates to an assembly comprising: an oil extraction pipe (4) having a thread; and a protector (1) for the thread of the extraction pipe (4), said protector (1) including a body and a thread complementary to that of the extraction pipe (4). The assembly is characterised in that it also comprises an elastomer film (60) affixed to the protector and designed to form a sealed connection between the extraction pipe (4) and the protector (1) when the protector (1) is positioned on the extraction pipe (4).Type: ApplicationFiled: September 1, 2011Publication date: August 22, 2013Inventors: Alexis Drouin, Thomas Charrue, Philippe Choffart
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Publication number: 20110024868Abstract: The invention relates to a method for fabricating a semiconductor substrate by providing a silicon on insulator type substrate that includes a base, an insulating layer and a first semiconductor layer, doping the first semiconductor layer to thereby obtain a modified first semiconductor layer, and providing a second semiconductor layer with a different dopant concentration than the modified first semiconductor layer over or on the modified first semiconductor layer. With this method, an improved dopant concentration profile can be achieved through the various layers which makes the substrates in particular more suitable for various optoelectronic applications.Type: ApplicationFiled: February 26, 2009Publication date: February 3, 2011Inventors: Alexis Drouin, Bernard Aspar, Christophe Desrumaux, Oliver Ledoux, Christophe Figuet
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Publication number: 20100164048Abstract: The disclosure provides a method for fabricating a semiconductor substrate comprising the steps of: providing a semiconductor on insulator type substrate, providing a diffusion barrier layer and providing a second semiconductor layer. By providing the diffusion barrier layer, it becomes possible to suppress diffusion from the highly doped first semiconductor layer into the second semiconductor layer. The invention also relates to a corresponding semiconductor substrate and opto-electronic devices comprising such a substrate.Type: ApplicationFiled: December 22, 2009Publication date: July 1, 2010Applicant: S.O.I.TEC Silicon on Insulator TechnologiesInventors: Christophe Figuet, Christophe Bouvier, Céline Cailler, Alexis Drouin, Thibaut Maurice