Abstract: The invention relates to a process for collectively bending microelectronic components comprising transferring microelectronic components (10) to and bending them on curved surfaces (21) of a shaping carrier (20), an adhesive layer (6) ensuring adhesion of the microelectronic components (10), and comprising producing conductive vias (22) that extend through the shaping carrier (20) and the adhesive lower layer (6), from the lower face (20i) of the shaping carrier (20), in order to emerge onto the lower conductive pads (12) of the microelectronic components (10).

Abstract: A method for collective bending of microelectronic components, including affixing an initial structure including a temporary handle and a plurality of microelectronic components, onto a shaping support, then removing the temporary handle, and bending the microelectronic components so that they are curved and adhere, by an adhesive layer, to the bent surfaces of the shaping support.

Abstract: A plurality of hubs are joined to frame struts thereby forming a space frame structure, wherein the hubs have monolithic bodies with protruding joints adapted for receiving and joining with the frame struts using tubular sleeves. Axes of the joints are aligned to converge at a common point to avoid rotational moment forces on the hubs. The hubs are preferably fabricated by a 3D printing method in a structural material. In a method of the invention, the struts, joint diameters and joint lengths are sized and positioned to avoid interference between adjacent struts.

Abstract: The invention relates to a process for collectively bending microelectronic components comprising transferring microelectronic components (10) to and bending them on curved surfaces (21) of a shaping carrier (20), an adhesive layer (6) ensuring adhesion of the microelectronic components (10), and comprising producing conductive vias (22) that extend through the shaping carrier (20) and the adhesive lower layer (6), from the lower face (20i) of the shaping carrier (20), in order to emerge onto the lower conductive pads (12) of the microelectronic components (10).

Abstract: A device of acquisition of a depth image of a scene by detection of a reflected light signal. The device includes a stack of a first sensor and of a second sensor. The first sensor includes first depth photosites configured to acquire at least one first sample of charges photogenerated during first time periods. The second sensor includes second depth photosites arranged opposite the first photosites, the second photosites being configured to acquire at least one second sample of charges photogenerated during second time periods offset with respect to the first time periods by a first constant phase shift. The first sensor or the second sensor further includes third photosites configured to acquire at least one third sample during third time periods offset with respect to the first time periods by a second constant phase shift.

Abstract: A device of acquisition of a depth image and of a 2D image of a scene, including depth photosites and capacitors, each depth photosite including a photodiode capable of detecting a reflected light signal, and at least one sense node coupled to the photodiode by a single transistor. Each capacitor is connected between the sense nodes of two photosites or between two sense nodes of a same photosite. Depth photosites supply the first plate of each capacitor with at least one first sample of charges photogenerated during first time periods, and supplying the second plate of each capacitor with a second sample of charges photogenerated during second time periods. Depth photosites supply the first plate of each capacitor with at least one third sample of charges photogenerated during third time periods.

Abstract: A device of acquisition of a 2D image and of a depth image, including: a first sensor including a front surface and a rear surface, the first sensor being formed inside and on top of a first semiconductor substrate and including a plurality of 2D image pixels and a plurality of transmissive windows; and a second sensor including a front surface placed against the rear surface of the first sensor and a rear surface opposite to the first sensor, the second sensor being formed inside and on top of a second semiconductor substrate and comprising a plurality of depth pixels arranged opposite the windows of the first sensor.

Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.

Abstract: A device of acquisition of a 2D image and of a depth image, including: a first sensor including a front surface and a rear surface, the first sensor being formed inside and on top of a first semiconductor substrate and including a plurality of 2D image pixels and a plurality of transmissive windows; and a second sensor including a front surface placed against the rear surface of the first sensor and a rear surface opposite to the first sensor, the second sensor being formed inside and on top of a second semiconductor substrate and comprising a plurality of depth pixels arranged opposite the windows of the first sensor.

Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.

Abstract: An apparatus and method for allowing avalanche photodiode based single-photon detectors to be driven by the same electrical circuit in gated and in free-running modes is proposed. The high-performance working of all the running modes relies on the capability of tuning the rise-time value of the electrical pulse driver which activates the avalanche photodiode in Geiger mode.

Abstract: A structural apparatus for carrying loads and transferring forces to ground, the apparatus having a plurality of nodes, each having a spherical core, the core having a spherical surface. Each one of the nodes having a plurality of housing frames secured in fixed selected positions in contact with the surface. Each one of the nodes having a plurality of housing hubs secured by the housing frames in contact with the surface and free to circularly rotate about a radius of the core, and each one of the nodes has a plurality of fasteners, each of the fastener having a head and a shaft extending from the head, the head constrained between the surface and a housing hub positioning the shaft in a radial attitude relative to the core. A plurality of struts interconnect the nodes and the struts are joined with the shafts at their opposing ends.

Abstract: An integrated imager circuit having a monolithic array of single photon avalanche diodes (SPADs) for capturing an image of a scene when said scene is hit by an optical pulse. The array has a plurality of SPADs connected to 2D readout circuits which determines the intensity of the light reflected by the scene by counting the number of photons received by the SPADs during a period of time. A plurality of SPADs connected to 3D readout circuits determines the distance to the scene by determining the elapsed time between the emission of each pulse and reception of the corresponding reflected photons.

Abstract: The invention relates to a method and device for identifying luminescent molecules according to the fluorescence correlation spectroscopy method.

Abstract: An integrated imager circuit comprising a monolithic array of single photon avalanche diodes (SPADs) for capturing an image of a scene when said scene is hit by an optical pulse, said array comprising: a plurality of SPADs connected to 2D readout circuits determines the intensity of the light reflected by said scene by counting the number of photons received by said SPADs during a period of time, a plurality of SPADs connected to 3D readout circuits determines the distance to said scene by determining the elapsed time between the emission of each pulse and reception of the corresponding reflected photons.

Abstract: A pn-junction in a semiconductor element is made in that, within a zone of a first conductivity type, by means of implantation, a first and second zone of a second conductivity type are formed which are initially separated from each other, with subsequent diffusion processes, as a result of lateral diffusion, the first and second zones combine into a connected well, by means of implantation, a further zone of the first conductivity type is formed which completely overlaps the first zone of the second conductivity type and which is larger than the first zone, and which does not touch the second zone of the second conductivity type.