Abstract: A semiconductor module includes a housing with at least one semiconductor component that is conductively connected to at least one output line. An integrated temperature sensor is also housed in the housing. This sensor is connected, via at least one of its load terminals, to a terminal for receiving a supply potential. The temperature sensor conducts a load current that heats-up the temperature sensor when a first temperature threshold is crossed and a supply potential is in being supplied. A housed interruption device is arranged in such a way that it interrupts the output lines carrying the load current when a second temperature threshold has been exceeded.

Abstract: A semiconductor module includes a housing with at least one semiconductor component that is conductively connected to at least one output line. An integrated temperature sensor is also housed in the housing. This sensor is connected, via at least one of its load terminals, to a terminal for receiving a supply potential. The temperature sensor conducts a load current that heats-up the temperature sensor when a first temperature threshold is crossed and a supply potential is in being supplied. A housed interruption device is arranged in such a way that it interrupts the output lines carrying the load current when a second temperature threshold has been exceeded.

Abstract: A circuit configuration includes a power switch and a measuring configuration for detecting the load current through the power switch. The circuit configuration utilizes a voltage drop across a connecting line, in particular a bonding wire, which is connected in series with the power switch for the purpose of determining the load current. A method for determining a current through a power semiconductor component is also provided.

Abstract: A circuit configuration with reduced EMC radiation in a motor vehicle includes a semiconductor switch with a load section which is connected, on one hand, through a first supply line to a positive battery terminal and, on the other hand, through a second supply line to a load and a freewheeling diode. A device for pulse-width modulation controls the semiconductor switch. The semiconductor switch and the freewheeling diode are disposed as close as possible to the battery terminal, so that supply leads from the battery to the semiconductor switch and the freewheeling diode are shortened.

Abstract: A circuit configuration for pulsed current regulation of inductive loads includes a freewheeling configuration which is connected in parallel with the inductive load and has a current-measuring device in order to measure current exclusively while a switching device is in an open state. This avoids an otherwise customary shunt resistor and associated power loss.

Abstract: A power semiconductor module includes a lead frame, at least one power semiconductor component fastened on said lead frame, a housing at least partly encapsulating said power semiconductor component, a plurality of output lines electrically conductively connected to said power semiconductor component and including load current-carrying output lines, electrically conductive connections between said at least one power semiconductor component and at least said load current-carrying output lines, and an interrupter. The interrupter irreversibly interrupts at least said load current-carrying output lines and/or said electrically conductive connections and at least said load current-carrying output lines, if the temperature of said power semiconductor component exceeds a predetermined temperature threshold. The interrupter is formed of a material having a volume-expanding and/or an oxidizing and/or an explosive characteristic with an increasing temperature.

Abstract: A field-effect-controllable power semiconductor component, such as a power MOSFET or IGBT, includes a semiconductor body, at least one cell field, a multiplicity of mutually parallel-connected transistor cells disposed in the at least one cell field, and at least two temperature sensors integrated in the semiconductor body and disposed at different locations from each other on the semiconductor body. Thus a temperature gradient between a strongly heated local region of the semiconductor body and one of the temperature sensors is reduced and a response time in the event of an overload is shortened.

Abstract: A metallic, lower mounting plate (21) is arranged in an insulating housing (20), a semiconductor body (23) with at least one logic part (24, 25) and at least one power part (26) with vertical MOS transistors being arranged on said lower mounting plate (21). A number of upper mounting plates (22) corresponding to the number of power parts (26) is introduced in the housing (20), said number of upper mounting plates (22) being electrically conductively secured on the upper sides of the power parts (26) of the semiconductor body (23) and being electrically connected to leads (4-6, 13-15). The lower leads covered by the upper leads are thereby recessed.

Abstract: A semiconductor component includes an insulating housing. A plurality of sheet-metal mounting plates are disposed in one and the same plane and are electrically separated from one another in the housing. Semiconductor switches of a rectifier bridge are electrically conductively secured to the mounting plates. Sheet-metal connection leads are electrically connected to the semiconductor switches. At least one sheet-metal connection lead is electrically connected to the mounting plates.