Patents by Inventor Alfonso Patti

Alfonso Patti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RADIATION HARDENED BIPOLAR INJUNCTION TRANSISTOR
    Publication number: 20120168909
    Abstract: A method for integrating a bipolar injunction transistor in a semiconductor chip includes the steps of forming an intrinsic base region of a second type of conductivity extending in the collector region from a main surface through an intrinsic base window of the sacrificial insulating layer, forming an emitter region of the first type of conductivity extending in the intrinsic base region from the main surface through an emitter window of the sacrificial insulating layer, removing the sacrificial insulating layer, forming an intermediate insulating layer on the main surface, and forming an extrinsic base region of the second type of conductivity extending in the intrinsic base region from the main surface through an extrinsic base window of the intermediate insulating layer
    Type: Application
    Filed: December 22, 2011
    Publication date: July 5, 2012
    Applicants: STMicroelectronics Asia Pacific Pte. Ltd., STMicroelectronics S.r.l.
    Inventors: Alfonso Patti, Antonino Schillaci, Bartolome Marrone, Gianleonardo Grasso, Rajesh Kumar
  • Darlington device with an ultra-lightweight emitter speed-up transistor
    Patent number: 5083182
    Abstract: The emitter region of a speed-up transistor is created in a base of a final transistor of a Darlington device and has a relatively low dopant concentration and small thickness.
    Type: Grant
    Filed: October 24, 1989
    Date of Patent: January 21, 1992
    Assignee: SGS-Thomson Microelectronics S.r.l.
    Inventors: David Ballaro', Alfonso Patti, Giuseppe Ferla, Ferruccio Frisina
  • Bipolar power semiconductor device and process for its manufacture
    Patent number: 5032887
    Abstract: A bipolar power semiconductor device, particularly a transistor, of structure formed by a matrix array of cells operating as emitter regions, comprises two separated and superposed layers of metal, one for the base and one for the emitter, separated by a layer of polyimide, as an intermediate dielectrtic.
    Type: Grant
    Filed: April 28, 1989
    Date of Patent: July 16, 1991
    Assignee: SGS-Thomson Microelectronics s.r.l.
    Inventors: Carmelo Oliveri, Alfonso Patti, Sergio Fleres