Patents by Inventor Alfonso Reina Cecco

Alfonso Reina Cecco has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140349329
    Abstract: A device and methods for detecting the effect of compounds on an organism are provided. Furthermore, the device and methods disclosed herein allow for the fractionation of complex samples and the isolation of one or more organisms for the samples. The device and methods also allow for the study of development of the organism.
    Type: Application
    Filed: March 24, 2014
    Publication date: November 27, 2014
    Applicant: President and Fellows of Harvard College
    Inventors: George M. WHITESIDES, Anna LAROMAINE SAGUÉ, Ratmir DERDA, Charles R. MACE, Katherine A. MIRICA, Alfonso Reina CECCO, Suzanne HULME
  • Patent number: 8535553
    Abstract: A film of single-layer to few-layer graphene is formed by depositing a graphene film via chemical vapor deposition on a surface of a growth substrate. The surface on which the graphene is deposited can be a polycrystalline nickel film, which is deposited by evaporation on a SiO2/Si substrate. A protective support layer is then coated on the graphene film to provide support for the graphene film and to maintain its integrity when it is removed from the growth substrate. The surface of the growth substrate is then etched to release the graphene film and the protective support layer from the growth substrate, wherein the protective support layer maintains the integrity of the graphene film during and after its release from the growth substrate. After being released from the growth substrate, the graphene film and protective support layer can be applied onto an arbitrary target substrate for evaluation or use in any of a wide variety of applications.
    Type: Grant
    Filed: April 13, 2009
    Date of Patent: September 17, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Jing Kong, Alfonso Reina Cecco, Mildred S. Dresselhaus
  • Publication number: 20100021708
    Abstract: A film of single-layer to few-layer graphene is formed by depositing a graphene film via chemical vapor deposition on a surface of a growth substrate. The surface on which the graphene is deposited can be a polycrystalline nickel film, which is deposited by evaporation on a SiO2/Si substrate. A protective support layer is then coated on the graphene film to provide support for the graphene film and to maintain its integrity when it is removed from the growth substrate. The surface of the growth substrate is then etched to release the graphene film and the protective support layer from the growth substrate, wherein the protective support layer maintains the integrity of the graphene film during and after its release from the growth substrate. After being released from the growth substrate, the graphene film and protective support layer can be applied onto an arbitrary target substrate for evaluation or use in any of a wide variety of applications.
    Type: Application
    Filed: April 13, 2009
    Publication date: January 28, 2010
    Applicant: Massachusetts Institute of Technology
    Inventors: Jing Kong, Alfonso Reina Cecco, Mildred S. Dresselhaus