Patents by Inventor Alfred FLECKENSTEIN

Alfred FLECKENSTEIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10529470
    Abstract: An Al2O3 carrier has a thin-film structure of platinum or a platinum alloy arranged thereon. The carrier and/or the thin-film structure are adapted to reduce mechanical stresses owing to different thermal expansion coefficients. The carrier and/or the thin-film structure include a surface of the carrier in the region of the thin-film structure is smoothed at least in sections to reduce the adhesion and/or a surface of the carrier has an intermediate layer on which the thin-film structure is arranged. The thermal expansion coefficient of the intermediate layer is from 8*10?6/K to 16*10?6/K, in particular from 8.5*10?6/K to 14*10?6/K, and/or the thin-film structure has at least one conductor path that is undular at least in sections, said conductor path extends laterally along the surface of the carrier.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: January 7, 2020
    Assignee: HERAEUS NEXENSOS GMBH
    Inventors: Thomas Loose, Stefan Dietmann, Alfred Fleckenstein, Dieter Teusch
  • Publication number: 20170110225
    Abstract: An Al2O3 carrier has a thin-film structure of platinum or a platinum alloy arranged thereon. The carrier and/or the thin-film structure are adapted to reduce mechanical stresses owing to different thermal expansion coefficients. The carrier and/or the thin-film structure include a surface of the carrier in the region of the thin-film structure is smoothed at least in sections to reduce the adhesion and/or a surface of the carrier has an intermediate layer on which the thin-film structure is arranged. The thermal expansion coefficient of the intermediate layer is from 8*10?6/K to 16*10?6/K, in particular from 8.5*10?6/K to 14*10?6/K, and/or the thin-film structure has at least one conductor path that is undular at least in sections, said conductor path extends laterally along the surface of the carrier.
    Type: Application
    Filed: March 25, 2015
    Publication date: April 20, 2017
    Applicant: HERAEUS SENSOR TECHNOLOGY GMBH
    Inventors: Thomas LOOSE, Stefan DIETMANN, Alfred FLECKENSTEIN, Dieter TEUSCH