Abstract: RF filtering circuitry comprises a first node, a second node, and a series signal path between the first node and the second node. A number of acoustic resonators are coupled to one or more of the first node and the second node via the series signal path. A first one of the acoustic resonators is associated with a first quality factor and a first electromechanical coupling coefficient. A second one of the acoustic resonators is associated with a second quality factor and a second electromechanical coupling coefficient. The first quality factor is different from the second quality factor and the first electromechanical coupling coefficient is different from the second electromechanical coupling coefficient.

Abstract: RF filtering circuitry comprises a first node, a second node, and a series signal path between the first node and the second node. A number of acoustic resonators are coupled to one or more of the first node and the second node via the series signal path. A first one of the acoustic resonators is associated with a first quality factor and a first electromechanical coupling coefficient. A second one of the acoustic resonators is associated with a second quality factor and a second electromechanical coupling coefficient. The first quality factor is different from the second quality factor and the first electromechanical coupling coefficient is different from the second electromechanical coupling coefficient.

Abstract: Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include mode suppression structures. Acoustic resonators, including stacked crystal filters (SCFs), are disclosed that include spurious mode suppression by modifying a piezoelectric coupling profile within one or more layers of an SCF. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof. Symmetric input and output electrical response for SCFs with mode suppression configurations may be exhibited by including piezoelectric materials with different electromechanical coupling values and/or by dividing stress profiles differently by configuring different thicknesses for input and output sides of SCFs.

Abstract: Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include phase shift structures. Acoustic resonators, including stacked crystal filters (SCFs) and coupled resonator filters (CRFs), may include inverted piezoelectric layers that are configured to provide built-in phase shift capabilities. Circuit topologies that include such SCFs may be provided with simplified structures and reduced loss. Circuit topologies with such CRFs may be provided with more symmetrical electrical connections and improved phase balance over operating frequencies. SCFs with phase shift structures may additionally include spurious mode suppression by modifying piezoelectric coupling profiles within one or more layers. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof.

Abstract: Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include mode suppression structures. Acoustic resonators, including stacked crystal filters (SCFs), are disclosed that include spurious mode suppression by modifying a piezoelectric coupling profile within one or more layers of an SCF. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof. Symmetric input and output electrical response for SCFs with mode suppression configurations may be exhibited by including piezoelectric materials with different electromechanical coupling values and/or by dividing stress profiles differently by configuring different thicknesses for input and output sides of SCFs.

Abstract: Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include phase shift structures. Acoustic resonators, including stacked crystal filters (SCFs) and coupled resonator filters (CRFs), may include inverted piezoelectric layers that are configured to provide built-in phase shift capabilities. Circuit topologies that include such SCFs may be provided with simplified structures and reduced loss. Circuit topologies with such CRFs may be provided with more symmetrical electrical connections and improved phase balance over operating frequencies. SCFs with phase shift structures may additionally include spurious mode suppression by modifying piezoelectric coupling profiles within one or more layers. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof.