Abstract: A semiconductor component. The semiconductor component includes a semiconductor substrate that includes a first side, on which an epitaxial layer is situated. On the epitaxial layer, body regions are sectionally situated, and on the body regions, source regions are situated. A plurality of first trenches and a plurality of second trenches extending starting from the source regions into the epitaxial layer. The first trenches have a greater depth than the second trenches. A second trench sectionally extends into a first trench in each case. On a trench surface of the first trenches, a layer including a first doping is situated in each case. The first trenches are filled with a first material including a second doping, the first doping having a higher value than the second doping.

Abstract: A power MOSFET having a substrate that has a substrate surface into which a trench structure is introduced, wherein first trenches and second trenches form the trench structure. The first trenches and second trenches are arranged in alternation. The first trenches are filled at least partially with a first material and the second trenches are filled with a second material. The first material has a first conductivity type and the second material has a second conductivity type, the first conductivity type and the second conductivity type being different from each other.

Abstract: A vertical power transistor, including a semiconductor substrate, on which at least one first layer and one second layer are situated, the second layer being situated on the first layer, and the first layer including a first semiconductor material; and a plurality of trenches, which extend from an upper side of the second layer into the first layer. The first layer has a first doping, and each trench has a first region, which extends from the respective trench bottom to a first level. Each first region is filled with a second semiconductor material, which has a second doping. The first semiconductor material and the second semiconductor material are different. Each first region is connected electrically to the second layer. The second doping is higher than the first doping. Heterojunctions, which behave as unipolar, rectifying junctions, form between the first layer and each first region.

Abstract: A diode is provided having a plate-shaped semiconductor element that includes a first side and a second side, the first side being connected by a first connecting layer to a first metallic contact and the second side being connected by a second connecting layer to a second metallic contact, the first side having a diode element in a middle area and having a further diode element in an edge area of the first side, which has crystal defects as a result of a separating process of the plate-shaped semiconductor element, the first connecting layer only establishing an electrical contact to the diode element and not to the further diode element and, on the first side, the further diode element having an exposed contact, which may be electrically contacted by the first connecting layer.

Abstract: A semiconductor system includes a PIN diode including a heavily n-doped layer, a lightly n-doped layer situated on the heavily n-doped layer, and a p-doped layer situated on the lightly n-doped layer, the p-doped layer forming an ohmic contact with a first metallization and the heavily n-doped layer forming an ohmic contact with a second metallization. During operation in the forward direction, a high injection takes place in which the lightly n-doped layer is flooded with charge carriers. At least two trench structures are introduced into the lightly n-doped layer, the trench structures on a surface in contact with the n-doped surface including a dielectric layer. The surface of the lightly n-doped layer in contact with the dielectric layer includes an increased surface recombination velocity for charge carriers.

Abstract: A semiconductor system including a planar anode contact, a planar cathode contact, and a volume of n-conductive semiconductor material, which has an anode-side end and a cathode-side end and extends between the anode contact and the cathode contact. A p-conductive area extends from the anode-side end of the volume toward the cathode-side end of the volume without reaching the cathode-side end. The p-conductive area has two sub-areas which are separated from one another in a cross section lying transversely with respect to the anode contact and the cathode contact, which delimit a sub-volume of the volume filled with n-conductive semiconductor material. The sub-volume is open toward the cathode contact, and is delimited by cathode-side ends of the sub-areas. A distance of the two sub-areas defining the opening is smaller than a distance between the two sub-areas prevailing outside of the opening and lying between anode side ends of the sub-areas.

Abstract: A power MOSFET having a substrate that has a substrate surface into which a trench structure is introduced, wherein first trenches and second trenches form the trench structure. The first trenches and second trenches are arranged in alternation. The first trenches are filled at least partially with a first material and the second trenches are filled with a second material. The first material has a first conductivity type and the second material has a second conductivity type, the first conductivity type and the second conductivity type being different from each other.

Abstract: A diode is provided having a plate-shaped semiconductor element that includes a first side and a second side, the first side being connected by a first connecting layer to a first metallic contact and the second side being connected by a second connecting layer to a second metallic contact, the first side having a diode element in a middle area and having a further diode element in an edge area of the first side, which has crystal defects as a result of a separating process of the plate-shaped semiconductor element, the first connecting layer only establishing an electrical contact to the diode element and not to the further diode element and, on the first side, the further diode element having an exposed contact, which may be electrically contacted by the first connecting layer.

Abstract: A pseudo-Schottky diode has an n-channel trench MOSFET which includes: a cathode, an anode, and located between the cathode and the anode, the following elements: a highly n+-doped silicon substrate; an n-doped epilayer having a trench extending into the n-doped epilayer from above; p-doped body regions provided above the n-doped epilayer and between the trenches. Highly n+-doped regions and highly p+-doped regions are provided on the upper surface of the p-doped body regions. Dielectric layers are provided on the side walls of the trench. The trench is filled with a first p-doped polysilicon layer, and the bottom of the trench is formed by a second p-doped layer which is in contact with the first p-doped polysilicon layer, and the second p-doped layer determines the breakdown voltage of the pseudo-Schottky diode.

Abstract: A rectifier circuit is described, which includes a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, an electronic circuit which includes at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor operated in the avalanche mode corresponding to the clamping voltage between the cathode terminal and the anode terminal of the rectifier circuit. In addition, a method is provided for operating a rectifier circuit which contains a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor being selected in accordance with the clamping voltage between the cathode terminal and the anode terminal, and the MOSFET transistor being operated in the avalanche mode.

Abstract: A semiconductor device having a trench MOS barrier Schottky diode includes a semiconductor volume of a first conductivity type, the semiconductor volume (i) having a first side which is covered with a metal layer, and (ii) including at least one trench which extends in the first side and is at least partially filled with metal and/or with a semiconductor material of a second conductivity type. The trench has at least one wall section which includes an oxide layer, at least in areas. At least one area, situated next to the trench, of the first side covered with the metal layer has a layer, situated between the metal layer and the semiconductor volume, made of a first semiconductor material of the second conductivity type.

Abstract: A semiconductor system including a planar anode contact, a planar cathode contact, and a volume of n-conductive semiconductor material, which has an anode-side end and a cathode-side end and extends between the anode contact and the cathode contact. A p-conductive area extends from the anode-side end of the volume toward the cathode-side end of the volume without reaching the cathode-side end. The p-conductive area has two sub-areas which are separated from one another in a cross section lying transversely with respect to the anode contact and the cathode contact, which delimit a sub-volume of the volume filled with n-conductive semiconductor material. The sub-volume is open toward the cathode contact, and is delimited by cathode-side ends of the sub-areas. A distance of the two sub-areas defining the opening is smaller than a distance between the two sub-areas prevailing outside of the opening and lying between anode side ends of the sub-areas.

Abstract: A semiconductor apparatus having a trench Schottky barrier Schottky diode, which includes: a semiconductor volume of a first conductivity type, which semiconductor volume has a first side covered with a metal layer, and at least one trench extending in the first side and at least partly filled with metal. At least one wall segment of the trench, and/or at least one region, located next to the trench, of the first side covered with the metal layer, is separated by a layer, located between the metal layer and the semiconductor volume, made of a first semiconductor material of a second conductivity type.

Abstract: Various embodiments provide a semiconductor device, wherein the semiconductor device comprises a semiconductor device chip formed at a substrate, wherein the semiconductor device chip comprises an active region formed in a center of the substrate and a boundary region free of active components of the semiconductor device chip; and a detection wiring arranged in the boundary region of the substrate and at least partially surrounding the active region, wherein the detection wiring and the semiconductor device chip are electrically isolated from each other; and wherein the detection wiring and the substrate are electrically connected with each other via a connection having a high electrical resistance.

Abstract: A generator device for the voltage supply of a motor vehicle is equipped with at least one rectifying element for rectifying an alternating voltage provided by a generator. The rectifying element has an n-channel MOS field-effect transistor in which the gate, the body area, and the source area are electrically fixedly connected to one another and in which the drain area is used as a cathode.

Abstract: A semiconductor chip, which includes an n-type substrate, over which an n-type epitaxial layer having trenches introduced into the epitaxial layer and filled with p-type semiconductor is situated, the trenches each having a heavily doped p-type region on their upper side, the n+-type substrate being situated in such a manner, that an alternating sequence of n-type regions having a first width and p-type regions having a second width is present; a first metallic layer, which is provided on the front side of the semiconductor chip, forms an ohmic contact with the heavily doped p-type regions and is used as an anode electrode; a second metallic layer, which is provided on the back side of the semiconductor chip, constitutes an ohmic contact and is used as a cathode electrode; a dielectric layer provided, in each instance, between an n-type region and an adjacent p-type region, as well as p-type layers provided between the n-type regions and the first metallic layer.

Abstract: A rectifier circuit is described, which includes a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, an electronic circuit which includes at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor operated in the avalanche mode corresponding to the clamping voltage between the cathode terminal and the anode terminal of the rectifier circuit. In addition, a method is provided for operating a rectifier circuit which contains a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor being selected in accordance with the clamping voltage between the cathode terminal and the anode terminal, and the MOSFET transistor being operated in the avalanche mode.

Abstract: An electronic component includes: a plate-shaped semiconductor element connected to a metallic contacting by a sinter layer; a dielectric layer having a surface metal layer disposed thereon, the dielectric layer being provided in an edge region of the semiconductor element, the edge region being provided with raised areas and depressions by patterning of the dielectric layer and/or the surface metal layer; and the sinter layer covers the edge region with the raised areas and depressions and thereby connects the edge region to the metallic contacting.

Abstract: A semiconductor apparatus having a trench Schottky barrier Schottky diode, which includes: a semiconductor volume of a first conductivity type, which semiconductor volume has a first side covered with a metal layer, and at least one trench extending in the first side and at least partly filled with metal. At least one wall segment of the trench, and/or at least one region, located next to the trench, of the first side covered with the metal layer, is separated by a layer, located between the metal layer and the semiconductor volume, made of a first semiconductor material of a second conductivity type.

Abstract: A semiconductor device having a trench MOS barrier Schottky diode includes a semiconductor volume of a first conductivity type, the semiconductor volume (i) having a first side which is covered with a metal layer, and (ii) including at least one trench which extends in the first side and is at least partially filled with metal and/or with a semiconductor material of a second conductivity type. The trench has at least one wall section which includes an oxide layer, at least in areas. At least one area, situated next to the trench, of the first side covered with the metal layer has a layer, situated between the metal layer and the semiconductor volume, made of a first semiconductor material of the second conductivity type.