Abstract: A method, an embedded state metric storage, is used for MAP (Maximum A Posterior)-based decoder of turbo codes to reduce the memory requirement of state metric storage. For MAP decoder, this method comprises selecting any state metric from the updated state metrics for each recursion direction, forward and reverse, and dividing the state metrics by the selected state metric; the selected state metric value becomes a constant, namely, one. The constant one state metric is embedded into the resulted state metrics. For log-MAP decoder, this method comprises selecting any state metric from the updated state metrics in each direction, forward and reverse, and subtracting the state metrics from the selected state metric; the selected state metric value becomes a constant, zero. The constant zero state metric is embedded into the resulted state metrics.

Abstract: A system and method is described for lithographically printing patterns on a semiconductor using combinations of illumination and mask patterns which are optimized together to produce the desired pattern. The method of optimizing both illumination and mask pattern allows the development of mask patterns that are not constrained by the geometry of the desired pattern to be printed. Thus, the method provides high quality images even when the desired printed patterns have critical dimensions that approach the resolution limits of a lithographic system. The resulting mask patterns using the method do not obviously correspond to the desired patterns to be printed. Such masks may include phase-shifting technology that use destructive interference to define dark areas of the image and are not constrained to conform to the desired printed pattern.

Abstract: A system and method is described for lithographically printing patterns on a semiconductor using combinations of illumination and mask patterns which are optimized together to produce the desired pattern. The method of optimizing both illumination and mask pattern allows the development of mask patterns that are not constrained by the geometry of the desired pattern to be printed. Thus, the method provides high quality images even when the desired printed patterns have critical dimensions that approach the resolution limits of a lithographic system. The resulting mask patterns using the method do not obviously correspond to the desired patterns to be printed. Such masks may include phase-shifting technology that use destructive interference to define dark areas of the image and are not constrained to conform to the desired printed pattern.