Patents by Inventor Alfred Politycki

Alfred Politycki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4258658
    Abstract: An apparatus useful for the chemical vapor deposition treatment of small parts is provided. The articles to be treated are received upon a frame and the CVD treatment is carried out within a heated receptor, with the deposition material feed line movable for more uniform coating. Immediately subsequent to the CVD treatment, the coating may be hardened by removing the supporting frame from the still hot receptor by attaching the frame to the movable material feed line. The small parts are now able to be rapidly quenched in freely circulating cooling air.
    Type: Grant
    Filed: October 24, 1979
    Date of Patent: March 31, 1981
    Assignee: Siemens Aktiengesellschaft
    Inventors: Alfred Politycki, Konrad Hieber, Manfred Stolz
  • Patent number: 4061814
    Abstract: A method for configurating thin layers, particularly in thin film circuits, wherein a layer to be configurated is irradiated with an electron beam passing through a mask to obtain a configuration corresponding to the configuration of selected portions of such a mask, and a mask for use therein, as well as a method of making such mask, in which the mask is so constructed that, in use, the electron beam completely radiates the geometric shadow areas of the supporting elements on the thin film.
    Type: Grant
    Filed: April 1, 1975
    Date of Patent: December 6, 1977
    Assignee: Siemens Aktiengesellschaft
    Inventor: Alfred Politycki
  • Patent number: 4048954
    Abstract: Apparatus for completely coating small metal components wherein a rotatable chamber is positioned within a gas-tight vessel, both being electrically non-conductive members. Inductive heating means surrounds the vessel. Electrically conductive components being coated are deposited in the chamber and tumbled therein at elevated temperatures while thermally decomposable gas bathes such components.
    Type: Grant
    Filed: August 19, 1976
    Date of Patent: September 20, 1977
    Assignee: Siemens Aktiengesellschaft
    Inventors: Alfred Politycki, Konrad Hieber
  • Patent number: 3988153
    Abstract: A method of forming an iris diaphragm for use in a corpuscular beam apparatus and having a thin metal layer with at least one opening and an integral reinforcing portion of the same metal which is set back from each of the openings characterized by providing a substrate with the first mask leaving an unexposed surface of the configuration of the thin metal layer, applying a thin metal layer on the exposed surface, forming a second mask having configuration of the reinforcing portion of the iris diaphragm and including a portion covering the thin metal layer adjacent each opening, applying a second thicker layer of the same metal to form a reinforcing portion and subsequently removing the iris diaphragm from the surface of the substrate. Preferably, each of the masks are formed by a photo development process and the metal layers are applied by electro-depositing.
    Type: Grant
    Filed: May 21, 1975
    Date of Patent: October 26, 1976
    Assignee: Siemens Aktiengesellschaft
    Inventor: Alfred Politycki
  • Patent number: 3958071
    Abstract: A resistor comprising a layer of material disposed on a substrate which layer contains a metal component which can be either a pure metal or a metal alloy and which has carbon inserted therein to vary the specific resistance and the temperature coefficient of the electrical resistance. The method of producing the resistor comprises providing a metal-organic compound such as nickel acetylacetonate which is evaporated and carried by a carrier gas, such as hydrogen or ammonia, to a heated substrate. When the vaporized metal-organic compound contacts the heated substrate it decomposes to provide a layer having a metal component with carbon inserted in the component. By controlling the temperature of the heated substrate and by controlling the pressure of the carrier gas, the volume percent of carbon inserted into the metal component when forming the layer can be controlled to vary both the specific resistance of the layer and the temperature coefficient of the electrical resistance.
    Type: Grant
    Filed: February 26, 1973
    Date of Patent: May 18, 1976
    Assignee: Siemens Aktiengesellschaft
    Inventors: Konrad Hieber, Alfred Politycki