Patents by Inventor Alfred Porst
Alfred Porst has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7015562Abstract: A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1×1017 to 3×1018 dopant atoms per cm3 for the anode emitter, especially on its surface 1019 dopant atoms per cm3 or more for the cathode emitter and approximately 1016 dopant atoms per cm3 for the blocking function of an anode-side zone.Type: GrantFiled: March 18, 2003Date of Patent: March 21, 2006Assignee: Infineon Technologies AGInventors: Anton Mauder, Alfred Porst
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Patent number: 6888211Abstract: A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1×1017 to 3×1018 dopant atoms per cm3 for the anode emitter, especially on its surface 1019 dopant atoms per cm3 or more for the cathode emitter and approximately 1016 dopant atoms per cm3 for the blocking function of an anode-side zone.Type: GrantFiled: December 30, 2002Date of Patent: May 3, 2005Assignee: Infineon Technologies AGInventors: Anton Mauder, Alfred Porst
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Publication number: 20030197247Abstract: A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1×1017 to 3×1018 dopant atoms per cm3 for the anode emitter, especially on its surface 1019 dopant atoms per cm3or more for the cathode emitter and approximately 1016 dopant atoms per cm3 for the blocking function of an anode-side zone.Type: ApplicationFiled: March 18, 2003Publication date: October 23, 2003Applicant: Infineon Technologies AGInventors: Anton Mauder, Alfred Porst
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Publication number: 20030122151Abstract: A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1×1017 to 3×1018 dopant atoms per cm3 for the anode emitter, especially on its surface 1019 dopant atoms per cm3 or more for the cathode emitter and approximately 1016 dopant atoms per cm3 for the blocking function of an anode-side zone.Type: ApplicationFiled: December 30, 2002Publication date: July 3, 2003Inventors: Anton Mauder, Alfred Porst
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Patent number: 6441408Abstract: A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.Type: GrantFiled: January 17, 2001Date of Patent: August 27, 2002Assignee: Infineon Technologies AGInventors: Alfred Porst, Helmut Strack, Anton Mauder, Hans-Joachim Schulze, Heinrich Brunner, Josef Bauer, Reiner Barthelmess
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Patent number: 6309920Abstract: A method for forming a field effect vertical bipolar transistor that includes a semiconductive body that has at its top surface a plurality of emitter zones of one conductivity type, each surrounded by a base zone of the opposite conductivity type, and gate electrodes for creating a channel at the surface through the base zone into the bulk inner portion of the one conduction type and at a bottom surface a collector zone that includes a collector electrode overlying a collector layer of the opposite conduction type overlying a field stop layer heavily doped of the opposite conduction type overlying the inner portion lightly doped of the one conduction type. Each of the collector layer and the field stop layer is less than 2 microns in thickness and the collector layer is used to inject minority carriers into the inner zone when appropriately biased.Type: GrantFiled: April 10, 2000Date of Patent: October 30, 2001Assignee: Siemens AktiengesellschaftInventors: Thomas Laska, Franz Auerbach, Heinrich Brunner, Alfred Porst, Jenoe Tihanyi, Gerhard Miller
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Publication number: 20010005036Abstract: A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.Type: ApplicationFiled: January 17, 2001Publication date: June 28, 2001Inventors: Alfred Porst, Helmut Strack, Anton Mauder, Hans-Joachim Schulze, Heinrich Brunner, Josef Bauer, Reiner Barthelmess
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Patent number: 6150675Abstract: A semiconductor component having a control structure for modulating the conductivity of a channel region wherein a small-area gate electrode of the proposed component covers the substrate only over a length L.sub.gd .apprxeq.L.sub.dep (L.sub.dep :=width of the space-charge zone in the substrate). An auxiliary electrode conductively connected to the source metallization and extending up to the edge of the symmetry unit is embedded in the gate oxide and is arranged spaced from the gate electrode. It sees to a comparatively uniform field distribution in the edge region of the gate electrode and thus prevents the electrical field strength in the semiconductor from reaching the critical value of approximately 10.sup.5 V/cm that triggers surge ionization.Type: GrantFiled: January 15, 1999Date of Patent: November 21, 2000Assignee: Siemens AktiengesellschaftInventors: Torsten Franke, Peter Turkes, Heinrich Brunner, Alfred Porst
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Patent number: 5726474Abstract: A semiconductor body is covered by a polysilicon layer having a gate electrode and a contact surface for fastening a gate lead. An integrated ohmic resistor connects the gate electrode to the contact surface.Type: GrantFiled: March 19, 1996Date of Patent: March 10, 1998Assignee: Siemens AktiengesellschaftInventors: Gerhard Miller, Thomas Laska, Alfred Porst
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Patent number: 5633515Abstract: MOSFET and IGBT components protected against overvoltage by a limiting diode inserted between drain or, respectively, collector terminal and gate terminal are provided. A freewheeling diode connected to the component having a limiting diode with a breakdown voltage that is lower than the breakdown voltage of the freewheeling diode by a defined amount is provided. This over-voltage protection can be achieved in a simple way by integrating the limiting diode into the semiconductor body of the freewheeling diode and by a corresponding arrangement of the anode zone of the limiting diode.Type: GrantFiled: March 3, 1995Date of Patent: May 27, 1997Assignee: Siemens AktiengesellschaftInventors: Josef-Matthias Gantioler, Alfred Porst, Jenoe Tihanyi, Hans Stut, deceased
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Patent number: 4816984Abstract: Inverter circuits are provided with bridge arms which, for example, including series-connected transistors (T1l , T2l ) with one freewheeling diode (D1, D2) each transistor. A critical operating state occurs when the recovery current is switched off by one of the diodes (D1, D2), so that the other transistor (T1l , T2l ) is cut in. The return current, which passes through this diode, can assume such high values, when rapidly cutting in the transistor, that the "dynamic" blocking capability of the diode is exceeded, and the diode is burnt out. The load current and the control current are thus reversed, so that the transistor is switched on more slowly and temporarily takes over part of the voltage which is normally applied to the diode.Type: GrantFiled: January 25, 1988Date of Patent: March 28, 1989Assignee: Siemens AktiengesellschaftInventors: Alfred Porst, Gerhard Miller, Mario Feldvoss
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Patent number: 4131339Abstract: The present invention concerns a power diode with a semiconductor body having an inner zone with a given thickness and a given specific resistance, and having on each side of said inner zone at least one outer zone which adjoins the inner zone and has a lower specific resistance in comparison with the inner zone. The diode is characterized in that the specific resistance and the thickness of the inner zone are so adapted to each other that U.sub.B < U.sub..rho.T, wherein U.sub.B is the avalanche voltage, and U.sub..rho.T is the voltage at which the space-charge zone includes the entire relatively lightly doped inner zone.Type: GrantFiled: February 15, 1977Date of Patent: December 26, 1978Assignee: Siemens AktiengesellschaftInventors: Friedrich Dannhauser, Alfred Porst
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Patent number: 4096623Abstract: A thyristor having current-amplifying auxiliary structures with an auxiliary emitter electrode out of contact with the contact electrode. The auxiliary emitter electrode is formed thinner than the main emitter electrode. The contact electrode is formed by simple planar techniques to have a plane surface on top of the semiconductor body.Type: GrantFiled: January 18, 1977Date of Patent: June 27, 1978Assignee: Siemens AktiengesellschaftInventors: Alfred Porst, Gottfried Schuh