Patents by Inventor Alfred R. Genis
Alfred R. Genis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8455278Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: GrantFiled: November 14, 2011Date of Patent: June 4, 2013Assignee: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, William W. Dromeshauser, Bryant Linares, Alfred R. Genis
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Publication number: 20120058602Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: ApplicationFiled: November 14, 2011Publication date: March 8, 2012Applicant: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, William W. Dromeshauser, Bryant Linares, Alfred R. Genis
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Patent number: 8058085Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: GrantFiled: July 11, 2006Date of Patent: November 15, 2011Assignee: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, William W. Dromeshauser, Bryant Linares, Alfred R. Genis
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Publication number: 20110054450Abstract: Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.Type: ApplicationFiled: November 3, 2010Publication date: March 3, 2011Applicant: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, Bryant Linares, Alfred R. Genis, William W. Dromeshauser, Michael Murray, Alicia E. Novak, John M. Abrahams
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Patent number: 7829377Abstract: Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.Type: GrantFiled: January 11, 2006Date of Patent: November 9, 2010Assignee: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, Bryant Linares, Alfred R. Genis, William W. Dromeshauser, Michael Murray, Alicia E. Novak, John M. Abrahams
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Publication number: 20090214169Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: ApplicationFiled: July 11, 2006Publication date: August 27, 2009Inventors: Robert C. Linares, Patrick J. Doering, William W. Dromeshauser, Bryant Linares, Alfred R. Genis
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Publication number: 20080170981Abstract: A grown single crystal diamond is polished using a non contact polishing technique, which leaves a residue on the diamond surface. In one embodiment, a wet chemical etch is performed to remove the residue, leaving a highly polished single crystal diamond surface. In a further embodiment, a colloidal silica solution is used in combination with rotating polishing pads to remove the residue. Both residue removing techniques may be used in further embodiments.Type: ApplicationFiled: January 17, 2007Publication date: July 17, 2008Inventors: Alfred R. Genis, William W. Dromeshauser, Robert C. Linares
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Patent number: 7238088Abstract: A grown single crystal diamond is polished using a non contact polishing technique, which leaves a residue on the diamond surface. In one embodiment, a wet chemical etch is performed to remove the residue, leaving a highly polished single crystal diamond surface. In a further embodiment, a colloidal silica solution is used in combination with rotating polishing pads to remove the residue. Both residue removing techniques may be used in further embodiments.Type: GrantFiled: January 5, 2006Date of Patent: July 3, 2007Assignee: Apollo Diamond, Inc.Inventors: Alfred R. Genis, William W. Dromeshauser, Robert C. Linares