Patents by Inventor Alfred R. Triano

Alfred R. Triano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4620127
    Abstract: An improved adhesive is disclosed for the automated assembly and alignment of kinescopes and yokes. The adhesive consists of a polymer matrix and a filler. The polymer matrix comprises an isocyanate component, a polyol component comprising one or more polyols having an average functionality greater than 2.0 and an average hydroxyl equivalent of from about 2000 to about 2500, a chain extender, a suitable catalyst and, optionally, other ingredients such as an antioxidant. The inorganic or organic filler comprises from about 32 to about 60 percent by volume of the adhesive. The subject adhesive is blended into a slow-curing and a fast-curing formulation, which are applied to a portion of the gap between the kinescope and the yoke. The fast-curing adhesive allows the completed assembly to be rapidly withdrawn from the assembly apparatus, or robot, and maintains the alignment during curing of the slower-curing adhesive. When both compositions are fully cured, there is produced an excellent, durable bond.
    Type: Grant
    Filed: February 26, 1985
    Date of Patent: October 28, 1986
    Assignee: RCA Corporation
    Inventors: Kwong T. Chung, Alfred R. Triano
  • Patent number: 4142195
    Abstract: A first layer of semiconductor device is of doped amorphous silicon prepared by a glow discharge in a mixture of silane and a doping gas. The first layer is on a substrate having good electrical properties. On the first layer and spaced from the substrate is a second layer of amorphous silicon prepared by a glow discharge in silane. On the second layer opposite the first layer is a metallic film forming a surface barrier junction therebetween, i.e. a Schottky barrier. The first layer is doped so as to make an ohmic contact with the substrate. Preferably the doping concentration of the first layer is graded so the dopant concentration is maximum at the interface of the first layer and the substrate. In a second embodiment of the Schottky barrier semiconductor device an intermediate layer is between and contiguous to both the first layer and the substrate. The intermediate layer facilitates in making ohmic contact between the amorphous silicon and the substrate.
    Type: Grant
    Filed: July 30, 1976
    Date of Patent: February 27, 1979
    Assignee: RCA Corporation
    Inventors: David E. Carlson, Christopher R. Wronski, Alfred R. Triano, Jr.