Patents by Inventor Alfred Roesch

Alfred Roesch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thermal stress relieving bimetallic plate
    Patent number: 4427993
    Abstract: A thermal matching element which exhibits high electrical conductivity and high thermal conductivity is used to join a heat generating semiconductor device with a heat transmissive electrically conductive members. The thermal matching element is independently selected for different directions in the plane of the matching surface.
    Type: Grant
    Filed: November 21, 1980
    Date of Patent: January 24, 1984
    Assignee: General Electric Company
    Inventors: Julie Y. Fichot, Alfred Roesch
  • Semiconductor package having strengthening and sealing upper chamber
    Patent number: 4249034
    Abstract: A semiconductor device is described wherein a semiconductor pellet is disposed within a hermetically sealed chamber including a thermally conductive base and a substantially rigid housing, said housing including an open upper chamber in which are disposed electrical terminals and which is filled with a sealing and strengthening layer to substantially increase the strength and hermeticity of the package.
    Type: Grant
    Filed: November 27, 1978
    Date of Patent: February 3, 1981
    Assignee: General Electric Company
    Inventors: Julie Y. Fichot, Alfred Roesch
  • Open tube aluminum oxide disc diffusion
    Patent number: 4239560
    Abstract: A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable results. An alternative embodiment provides both the deep diffusion characteristics of aluminum with the high surface concentration of boron by using a boron nitride wafer carrier.
    Type: Grant
    Filed: May 21, 1979
    Date of Patent: December 16, 1980
    Assignee: General Electric Company
    Inventors: Mike F. Chang, David K. Hartman, Richard W. Kennedy, Alfred Roesch, Henri B. Assalit
  • Open tube aluminum diffusion
    Patent number: 4235650
    Abstract: A method for forming a p-conductivity type layer in a semiconductor wafer using aluminum as a diffusion source and which can be carried out in an open diffusion tube is described. A variety of aluminum sources can be employed in an open tube. A stream of essentially oxygen-free inert gas provides transport for the dopant and prevents the entry of potentially contaminating ambient into the tube.
    Type: Grant
    Filed: September 5, 1978
    Date of Patent: November 25, 1980
    Assignee: General Electric Company
    Inventors: Mike F. Chang, Alfred Roesch
  • Selective open tube aluminum diffusion
    Patent number: 4188245
    Abstract: A method for selectively diffusing a semiconductor body with p-conductivity type impurities utilizing aluminum as a diffusion source and able to be performed in a reuseable open diffusion tube is described. A gas flow is established in the diffusion tube which is essentially an inert gas and includes from one to ten percent oxygen. Simultaneous blanket and selective diffusions may be formed in accordance with this invention by modifying the amount of oxygen in the flow.
    Type: Grant
    Filed: September 18, 1978
    Date of Patent: February 12, 1980
    Assignee: General Electric Company
    Inventors: Mike F. Chang, Alfred Roesch, Richard W. Kennedy