Patents by Inventor Alfred Sigl
Alfred Sigl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948912Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.Type: GrantFiled: February 1, 2023Date of Patent: April 2, 2024Assignee: Infineon Technologies AGInventors: Alfred Sigl, Alexander Frey
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Publication number: 20230178512Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.Type: ApplicationFiled: February 1, 2023Publication date: June 8, 2023Inventors: Alfred Sigl, Alexander Frey
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Publication number: 20230115183Abstract: An image sensor device includes a pixel. The pixel includes a semiconductor layer having a first surface. A photodiode is formed in the semiconductor layer and is configured to generate charge carriers based on light reaching the photodiode. A storage node is formed in the semiconductor layer, the storage node being arranged so that charge carriers generated in the photodiode are transferred to the storage node. A light-shielding structure is formed in the semiconductor layer and is disposed at least between the first surface of the semiconductor layer and the storage node so as to prevent at least part of the light travelling in the semiconductor layer away from the first surface from reaching the storage node.Type: ApplicationFiled: October 7, 2022Publication date: April 13, 2023Inventors: Dirk VIETZKE, Tobias MONO, Stefano PARASCANDOLA, Dirk OFFENBERG, Alfred SIGL
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Patent number: 11594515Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated by particle bombardment which is configured to remove atoms of the first hybrid interface layer and atoms of the second hybrid interface layer to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.Type: GrantFiled: November 3, 2021Date of Patent: February 28, 2023Assignee: Infineon Technologies AGInventors: Alfred Sigl, Alexander Frey
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Patent number: 11414320Abstract: A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.Type: GrantFiled: October 7, 2020Date of Patent: August 16, 2022Assignee: INFINEON TECHNOLOGIES AGInventors: Alfred Sigl, Wolfgang Friza, Stefan Geissler
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Publication number: 20220139870Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated by particle bombardment which is configured to remove atoms of the first hybrid interface layer and atoms of the second hybrid interface layer to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.Type: ApplicationFiled: November 3, 2021Publication date: May 5, 2022Inventors: Alfred Sigl, Alexander Frey
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Publication number: 20210391377Abstract: A method of manufacturing a semiconductor device is described. The method includes providing a semiconductor substrate. The semiconductor substrate includes a high-doped semiconductor substrate layer, a high-doped semiconductor device layer, and a low-doped semiconductor etch stop layer arranged between the high-doped semiconductor substrate layer and the high-doped semiconductor device layer. The high-doped semiconductor substrate layer is removed, wherein the removing includes dopant selective chemical etching stopping at the low-doped semiconductor etch stop layer. Further, the low-doped semiconductor etch stop layer is thinned to generate an exposed surface of the high-doped semiconductor device layer.Type: ApplicationFiled: June 11, 2021Publication date: December 16, 2021Inventors: Alexander Frey, Bernhard Goller, Iris Moder, Ingo Muri, Alfred Sigl, Tobias Weindler
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Publication number: 20210017019Abstract: A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.Type: ApplicationFiled: October 7, 2020Publication date: January 21, 2021Inventors: Alfred Sigl, Wolfgang Friza, Stefan Geissler
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Patent number: 10889492Abstract: A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.Type: GrantFiled: February 6, 2019Date of Patent: January 12, 2021Assignee: INFINEON TECHNOLOGIES AGInventors: Alfred Sigl, Wolfgang Friza, Stefan Geissler
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Patent number: 10626007Abstract: In accordance with an embodiment, a microelectromechanical transducer includes a displaceable membrane having an undulated section comprising at least one undulation trough and at least one undulation peak and a plurality of piezoelectric unit cells. At least one piezoelectric unit cell is provided in each case in at least one undulation trough and at least one undulation peak, where each piezoelectric unit cell has a piezoelectric layer and at least one electrode in electrical contact with the piezoelectric layer. The membrane may be formed as a planar component having a substantially larger extent in a first and a second spatial direction, which are orthogonal to one another, than in a third spatial direction, which is orthogonal to the first and the second spatial direction and defines an axial direction of the membrane.Type: GrantFiled: July 10, 2018Date of Patent: April 21, 2020Assignee: Infineon Technologies AGInventors: Christian Bretthauer, Alfons Dehe, Alfred Sigl
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Publication number: 20200023630Abstract: A device for debonding a structure from a main surface region of a carrier includes a tape for laminating to the structure, a first holder and a second holder for spanning the tape and to keep a tension of the tape. The second holder can be movable into a lifted position vertically offset to the main surface region of the carrier. The device can also include a deflecting-element for providing a deflection-line between the first holder and the second holder for deflecting the tape in response to moving the second holder into the lifted position. The deflecting-element can be moveable parallel to the carrier for moving the deflection-line parallel to the carrier and for debonding the structure, laminated to the tape, from the carrier.Type: ApplicationFiled: July 8, 2019Publication date: January 23, 2020Inventors: Alfred Sigl, Dominic Maier, Daniel Porwol
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Publication number: 20190367355Abstract: In accordance with an embodiment, a microelectromechanical transducer includes a displaceable membrane having an undulated section comprising at least one undulation trough and at least one undulation peak and a plurality of piezoelectric unit cells. At least one piezoelectric unit cell is provided in each case in at least one undulation trough and at least one undulation peak, where each piezoelectric unit cell has a piezoelectric layer and at least one electrode in electrical contact with the piezoelectric layer. The membrane may be formed as a planar component having a substantially larger extent in a first and a second spatial direction, which are orthogonal to one another, than in a third spatial direction, which is orthogonal to the first and the second spatial direction and defines an axial direction of the membrane.Type: ApplicationFiled: August 14, 2019Publication date: December 5, 2019Inventors: Christian Bretthauer, Alfons Dehe, Alfred Sigl
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Publication number: 20190241431Abstract: A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.Type: ApplicationFiled: February 6, 2019Publication date: August 8, 2019Inventors: Alfred Sigl, Wolfgang Friza, Stefan Geissler
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Publication number: 20190016588Abstract: In accordance with an embodiment, a microelectromechanical transducer includes a displaceable membrane having an undulated section comprising at least one undulation trough and at least one undulation peak and a plurality of piezoelectric unit cells. At least one piezoelectric unit cell is provided in each case in at least one undulation trough and at least one undulation peak, where each piezoelectric unit cell has a piezoelectric layer and at least one electrode in electrical contact with the piezoelectric layer. The membrane may be formed as a planar component having a substantially larger extent in a first and a second spatial direction, which are orthogonal to one another, than in a third spatial direction, which is orthogonal to the first and the second spatial direction and defines an axial direction of the membrane.Type: ApplicationFiled: July 10, 2018Publication date: January 17, 2019Inventors: Christian Bretthauer, Alfons Dehe, Alfred Sigl
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Patent number: 9988262Abstract: A method for fabricating an electronic device is disclosed. In one example, the method comprises providing a semiconductor wafer, forming a plurality of cavities into the semiconductor wafer, filling a stabilization material into the cavities, fabricating a temporary panel by applying a cap sheet onto the semiconductor wafer, the cap sheet covering the cavities, singulating the temporary panel into a plurality of semiconductor devices, fabricating an embedded wafer by embedding the semiconductor devices in an encapsulant, removing the cap sheet of each one of the semiconductor devices, and singulating the embedded wafer into a plurality of electronic devices.Type: GrantFiled: September 14, 2017Date of Patent: June 5, 2018Assignee: Infineon Technologies AGInventors: Dominic Maier, Joachim Mahler, Daniel Porwol, Alfred Sigl
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Publication number: 20180086632Abstract: A method for fabricating an electronic device is disclosed. In one example, the method comprises providing a semiconductor wafer, forming a plurality of cavities into the semiconductor wafer, filling a stabilization material into the cavities, fabricating a temporary panel by applying a cap sheet onto the semiconductor wafer, the cap sheet covering the cavities, singulating the temporary panel into a plurality of semiconductor devices, fabricating an embedded wafer by embedding the semiconductor devices in an encapsulant, removing the cap sheet of each one of the semiconductor devices, and singulating the embedded wafer into a plurality of electronic devices.Type: ApplicationFiled: September 14, 2017Publication date: March 29, 2018Applicant: Infineon Technologies AGInventors: Dominic Maier, Joachim Mahler, Daniel Porwol, Alfred Sigl
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Patent number: 9305813Abstract: This invention relates to a pressure transmission apparatus for bonding a plurality of chips to a substrate. The pressure transmission apparatus includes a pressure body for applying a bonding force which acts in the bonding direction (B) to the chip. The pressure body has a first pressure side and an opposite second pressure side, both oriented to be transverse to the bonding direction (B). Fixing means are provided to attach to the periphery of the pressure transmission apparatus for fixing of the pressure transmission apparatus on a retaining body in the bonding direction (B). A sliding layer is provided for sliding motion of the pressure body transversely to the bonding direction (B).Type: GrantFiled: March 16, 2012Date of Patent: April 5, 2016Assignee: EV GROUP E. THALLNER GMBHInventors: Markus Wimplinger, Alfred Sigl
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Patent number: 9245869Abstract: A method for tacking of chips onto a substrate at chip positions which are distributed on a surface of the substrate. The method includes the following steps: formation or application of a function layer onto the substrate, removing the function layer from the substrate at the chip positions at least in the region of contacts to uncover the contacts, tacking chips onto one chip contact side of the function layer at the chip positions and contacting the chips with the contacts via contact elements.Type: GrantFiled: March 18, 2013Date of Patent: January 26, 2016Assignee: EV Group E. Thallner GmbHInventors: Jurgen Burggraf, Markus Wimplinger, Harald Wiesbauer, Alfred Sigl
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Publication number: 20150303082Abstract: This invention relates to a pressure transmission apparatus for bonding a plurality of chips to a substrate. The pressure transmission apparatus includes a pressure body for applying a bonding force which acts in the bonding direction (B) to the chip. The pressure body has a first pressure side and an opposite second pressure side, both oriented to be transverse to the bonding direction (B). Fixing means are provided to attach to the periphery of the pressure transmission apparatus for fixing of the pressure transmission apparatus on a retaining body in the bonding direction (B). A sliding layer is provided for sliding motion of the pressure body transversely to the bonding direction (B).Type: ApplicationFiled: March 16, 2012Publication date: October 22, 2015Applicant: EV Group E. Thallner GmbHInventors: Markus WIMPLINGER, Alfred SIGL
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Publication number: 20150104902Abstract: A method for tacking of chips onto a substrate at chip positions which are distributed on a surface of the substrate. The method includes the following steps: formation or application of a function layer onto the substrate, removing the function layer from the substrate at the chip positions at least in the region of contacts to uncover the contacts, tacking chips onto one chip contact side of the function layer at the chip positions and contacting the chips with the contacts via contact elements.Type: ApplicationFiled: March 18, 2013Publication date: April 16, 2015Applicant: EV GROUP E. THALLNER GMBHInventors: Jurgen Burggraf, Markus Wimplinger, Harald Wiesbauer, Alfred Sigl