Patents by Inventor Alfred T. Schremer

Alfred T. Schremer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High SMSR unidirectional etched lasers and low back-reflection photonic device
    Patent number: 10063028
    Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: August 28, 2018
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventors: Alex A Behfar, Alfred T Schremer, Jr., Cristian Stagarescu
  • HIGH SMSR UNIDIRECTIONAL ETCHED LASERS AND LOW BACK-REFLECTION PHOTONIC DEVICE
    Publication number: 20150049777
    Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
    Type: Application
    Filed: October 30, 2014
    Publication date: February 19, 2015
    Applicant: BinOptics Corporation
    Inventors: Alex A Behfar, Alfred T Schremer, JR., Cristian Stagarescu
  • High SMSR unidirectional etched lasers and low back-reflection photonic device
    Patent number: 8891576
    Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
    Type: Grant
    Filed: October 1, 2010
    Date of Patent: November 18, 2014
    Assignee: Binoptics Corporation
    Inventors: Alex A. Behfar, Alfred T. Schremer, Jr., Cristian B. Stagarescu
  • Algainn-based lasers produced using etched facet technology
    Patent number: 8306086
    Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs etching to form device waveguides and mirrors, preferably using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: November 6, 2012
    Assignee: Binoptics Corporation
    Inventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu, Vainateya
  • Multi-level integrated photonic devices
    Patent number: 8306087
    Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: November 6, 2012
    Assignee: Binoptics Corporation
    Inventors: Alex A. Behfar, Malcolm R. Green, Alfred T. Schremer
  • AlGaInN-based lasers produced using etched facet technology
    Patent number: 8290013
    Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: October 16, 2012
    Assignee: Binoptics Corporation
    Inventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu, Vainateya
  • Spatial filters
    Patent number: 8249122
    Abstract: An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: August 21, 2012
    Assignee: Binoptics Corporation
    Inventors: Alex A. Behfar, Alfred T. Schremer
  • AlGaInN-Based Lasers Produced Using Etched Facet Technology
    Publication number: 20120149141
    Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.
    Type: Application
    Filed: February 15, 2012
    Publication date: June 14, 2012
    Inventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu, Vainateya
  • ALGAINN-BASED LASERS PRODUCED USING ETCHED FACET TECHNOLOGY
    Publication number: 20120142123
    Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs etching to form device waveguides and mirrors, preferably using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
    Type: Application
    Filed: February 15, 2012
    Publication date: June 7, 2012
    Inventors: ALEX A. BEHFAR, Alfred T. Schremer, Cristian B. Stagarescu, Vainateya
  • Single longitudinal mode laser diode
    Patent number: 8160114
    Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: April 17, 2012
    Assignee: BinOptics Corporation
    Inventors: Alex A. Behfar, Kiyofumi Muro, Cristian B. Stagarescu, Alfred T. Schremer
  • AlGaInN-based lasers produced using etched facet technology
    Patent number: 8130806
    Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
    Type: Grant
    Filed: June 20, 2006
    Date of Patent: March 6, 2012
    Assignee: BinOptics Corporation
    Inventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu, Vainateya
  • SPATIAL FILTERS
    Publication number: 20110317734
    Abstract: An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.
    Type: Application
    Filed: June 6, 2011
    Publication date: December 29, 2011
    Inventors: Alex A. Behfar, Alfred T. Schremer
  • Etched-facet ridge lasers with etch-stop
    Patent number: 8009711
    Abstract: A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
    Type: Grant
    Filed: September 25, 2009
    Date of Patent: August 30, 2011
    Assignee: Binoptics Corporation
    Inventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu
  • Multi-level integrated photonic devices
    Patent number: 7972879
    Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: July 5, 2011
    Assignee: Binoptics Corporation
    Inventors: Alex A. Behfar, Malcolm R. Green, Alfred T. Schremer
  • Spatial filters
    Patent number: 7957445
    Abstract: An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.
    Type: Grant
    Filed: June 1, 2006
    Date of Patent: June 7, 2011
    Assignee: Binoptics Corporation
    Inventors: Alex A. Behfar, Alfred T. Schremer
  • SINGLE LONGITUDINAL MODE LASER DIODE
    Publication number: 20110032967
    Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
    Type: Application
    Filed: October 20, 2010
    Publication date: February 10, 2011
    Inventors: Alex A. Behfar, Kiyofumi Muro, Christian B. Stagarescu, Alfred T. Schremer
  • HIGH SMSR UNIDIRECTIONAL ETCHED LASERS AND LOW BACK-REFLECTION PHOTONIC DEVICE
    Publication number: 20110019708
    Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
    Type: Application
    Filed: October 1, 2010
    Publication date: January 27, 2011
    Inventors: Alex A. Behfar, Alfred T. Schremer, JR., Cristian B. Stagarescu
  • Single longitudinal mode laser diode
    Patent number: 7835415
    Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
    Type: Grant
    Filed: August 31, 2004
    Date of Patent: November 16, 2010
    Assignee: BinOptics Corporation
    Inventors: Alex A. Behfar, Kiyofumi Muro, Cristian B. Stagarescu, Alfred T. Schremer
  • High SMSR unidirectional etched lasers and low back-reflection photonic device
    Patent number: 7817702
    Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
    Type: Grant
    Filed: March 18, 2004
    Date of Patent: October 19, 2010
    Assignee: Binoptics Corporation
    Inventors: Alex A. Behfar, Alfred T. Schremer, Jr., Cristian B. Stagarescu
  • Integrated photonic devices
    Patent number: 7799587
    Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.
    Type: Grant
    Filed: August 2, 2006
    Date of Patent: September 21, 2010
    Assignee: BinOptics Corporation
    Inventors: Alex A. Behfar, Malcolm Green, Alfred T. Schremer