Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a semiconductor substrate; forming a core region on the semiconductor substrate with the core region having a core side; forming an inner bond pad on the semiconductor substrate with the inner bond pad having an inner core pad and an inner probe pad with the inner probe pad further from the core region than the inner core pad; and forming an outer bond pad on the semiconductor substrate and adjacent the inner bond pad with the outer bond pad having an outer core pad and an outer probe pad with the outer probe pad closer to the core region than the outer core pad, and the inner probe pad and the outer probe pad aligned parallel to the core side.

Abstract: An improved crack stop structure (and method of forming) is provided within a die seal ring of an integrated circuit die to increase crack resistance during the dicing of a semiconductor wafer. The crack stop structure includes a stack layer (of alternating insulating and conductive layers) and an anchor system extending from the stack layer to a predetermined point below the surface of the substrate. A crack stop trench is formed in the substrate and filled with material having good crack resistance to anchor the stack layer to the substrate.

Abstract: An improved crack stop structure (and method of forming) is provided within a die seal ring of an integrated circuit die to increase crack resistance during the dicing of a semiconductor wafer. The crack stop structure includes a stack layer (of alternating insulating and conductive layers) and an anchor system extending from the stack layer to a predetermined point below the surface of the substrate. A crack stop trench is formed in the substrate and filled with material having good crack resistance to anchor the stack layer to the substrate.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a semiconductor substrate; forming a core region on the semiconductor substrate with the core region having a core side; forming an inner bond pad on the semiconductor substrate with the inner bond pad having an inner core pad and an inner probe pad with the inner probe pad further from the core region than the inner core pad; and forming an outer bond pad on the semiconductor substrate and adjacent the inner bond pad with the outer bond pad having an outer core pad and an outer probe pad with the outer probe pad closer to the core region than the outer core pad, and the inner probe pad and the outer probe pad aligned parallel to the core side.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit substrate having a non-active side and an active side; forming a recess in the integrated circuit substrate from the non-active side exposing a first contact and a second contact with the first contact and the second contact along the active side; forming a first via, having a first via extension extended beyond the non-active side and an opening at the non-active side, within the recess; forming a barrier liner within the opening with the barrier liner exposed beyond the non-active side; and forming a second via over the barrier liner and within the opening of the first via with the second via exposed beyond the non-active side.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit substrate having a non-active side and an active side; forming a recess in the integrated circuit substrate from the non-active side exposing a first contact and a second contact with the first contact and the second contact along the active side; forming a first via, having a first via extension extended beyond the non-active side and an opening at the non-active side, within the recess; forming a barrier liner within the opening with the barrier liner exposed beyond the non-active side; and forming a second via over the barrier liner and within the opening of the first via with the second via exposed beyond the non-active side.