Abstract: A superconductive device is disclosed, which has specific characteristics of a generator and/or detector of sub-millimeter wave length radiation, comprising a two-dimensional lateral array of mesas (column-shaped elements) each containing vertically stacked Josephson junctions on top of one another. This device is capable of covering the entire frequency range between the microwave and far infrared spectral regions, in plurality of applications, where radiation emission and detection is involved. According to its various embodiments, thin columns (stacks) of Josephson junctions are monolithically built between superconducting electrical top and bottom contact layers. Mutually isolated segments cut out of the contact layers allow for optimization of circuit parameters such as impedance matching to load and maximizing the output power. External electronic control allows modulation of the radiation field and other operation modes of the device.

Abstract: A superconductive device is disclosed, which has specific characteristics of a generator and/or detector of sub-millimeter wavelength radiation, comprising a two-dimensional lateral array of mesas (column-shaped elements) each containing vertically stacked Josephson junctions on top of one another. This device is capable of covering the entire frequency range between the microwave and far infrared spectral regions, in a plurality of applications, where radiation emission and detection is involved. According to its various embodiments, thin columns (stacks) of Josephson junctions are monolithically built between superconducting electrical top and bottom contact layers. Mutually isolated segments cut out of the contact layers allow for optimization of circuit parameters such as impedance matching to load and maximizing the output power. External electronic control allows modulation of the radiation field and other operation modes of the device.

Abstract: A gripper assembly for a printing machine, a gripper member having a gripper tip formed with a free edge and a clamping face thereat, the clamping face being cooperably with a gripper support for gripping a sheet therebetween, the clamping face being trapezoidal and having the longer of the two parallel sides thereof disposed in vicinity of the free edge of the gripper tip.

Abstract: Due to its dopant structure, the radiant band of a III(A) - V(B) type luminescent diode, emitting light radiation in the plane of the PN-junction, possesses differences in delay time of .ltoreq. 10.sup.-10 seconds, which permit an extension to higher frequencies.The dopant structure is characterized by an n.sup.+ type basic material incorporating an impurity concentration of N.sub.D .gtoreq. 10.sup.18 cm.sup.-3, and by a graded acceptor dopant profile which within the radiant region has a gradient of .ltoreq. 10.sup.22 cm.sup.-4 and a gradient of .gtoreq. 10.sup.23 cm.sup.-4 in the vicinity of the p.sup.+ region. Thus the injection conditions in respect to the quantum efficiencies and to the frequency range are improved. The diode is fabricated by a diffusion process and/or a liquid epitaxial process, in which definite temperatures and time relations have to be satisfied.