Abstract: A method of depositing an outer layer (35) on a surface (36) of a reflective optical element (30) for the EUV wavelength range, wherein the depositing is effected in at least one macro cycle (37). The macro cycle (37) includes: at least partly depositing the outer layer (35) with an atomic layer deposition (ALD) process in at least one ALD cycle and partly back-etching the outer layer (35). Also disclosed is a reflective optical element (30) for the extreme ultraviolet (EUV) wavelength range which includes a surface (36) having an outer layer (35), wherein the outer layer (35) is deposited by the above-described method, and to an EUV lithography system having at least one such reflective optical element (30).

Abstract: The present disclosure relates to a method of manufacturing a thin film device. A multilevel nanoimprint lithography template is transferred into a thin film stack comprising an electrode layer and a blanket sacrificial layer covering the electrode layer. The template is transferred, thereby patterning the device and exposing a predefined insulating area of the electrode while keeping a remaining portion of the sacrificial layer that covers a pre-defined electrical contact area of the electrode. An area selective atomic layer deposition (ALD) process is performed to selectively cover the exposed area of the electrode layer with a cover layer. After removing the remaining portion of the sacrificial layer the electrical contact area of the electrode layer is exposed for further processing.

Abstract: The present disclosure concerns an atomic layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non-deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces provided with at least a separator gas inlet and a separator drain for, in use exposing the substrate to a separator gas flow. Wherein at least one of the gas separator spaces forms a combined separator-inhibitor gas flow comprising a separator gas and inhibitor moieties. The inhibitor moieties selectively adhering to the non-deposition area to form an inhibition layer reducing adsorption of precursor moieties. In a preferred embodiment the device includes a back-etching space to increase selectivity of the deposition process.