Abstract: A system includes a memory block. The memory block includes a local control circuit that is operable to control a memory operation of the memory block. The local control circuit includes a local sense amplifier. The system also includes a global memory control circuit separate from the memory block, and the global memory control circuit is operable to communicate with the local control circuit. The global memory control circuit includes a global data latch operable to receive a sensed data state from the local sense amplifier.

Abstract: A system includes a memory block. The memory block includes a local control circuit that is operable to control a memory operation of the memory block. The local control circuit includes a local sense amplifier. The system also includes a global memory control circuit separate from the memory block, and the global memory control circuit is operable to communicate with the local control circuit. The global memory control circuit includes a global data latch operable to receive a sensed data state from the local sense amplifier.

Abstract: A system includes a memory block. The memory block includes a local control circuit that is operable to control a memory operation of the memory block. The local control circuit includes a local sense amplifier. The system also includes a global memory control circuit separate from the memory block, and the global memory control circuit is operable to communicate with the local control circuit. The global memory control circuit includes a global sense amplifier operable to receive a sensed data state from the local sense amplifier.

Abstract: A system includes a memory block. The memory block includes a local control circuit that is operable to control a memory operation of the memory block. The local control circuit includes a local sense amplifier. The system also includes a global memory control circuit separate from the memory block, and the global memory control circuit is operable to communicate with the local control circuit. The global memory control circuit includes a global sense amplifier operable to receive a sensed data state from the local sense amplifier.

Abstract: A system includes a memory block and a controller. The controller is adapted to skew a pre-charge signal for a bit line of the memory block. The controller can skew the pre-charge signal during a read operation or a write operation. The system can also include a sense amplifier in communication with a bit line of the memory block, and the sense amplifier can automatically shut off after indicating a sensed data state for the bit line. The controller may be a global controller or a local controller.

Abstract: The present invention relates to a system and method for adjusting timing of memory access operations to a memory block. In one embodiment, a controller may be in communication with a memory block. The controller may be adapted to adjust timing of a memory access operation to the memory block by extending a portion of a clock pulse to compensate for delay associated with the memory block. The delay may correspond to a predecoder delay or a global decoder delay. The clock pulse may be a read clock pulse or a write clock pulse. In one embodiment, the controller may be adapted to adjust timing of a read clock pulse differently from a write clock pulse.

Abstract: According to one exemplary embodiment, a memory cell in a semiconductor chip includes a non-volatile memory transistor, a control gate, and a floating gate. The control gate is capacitively coupled to the floating gate of the non-volatile memory transistor by a metal capacitor. The metal capacitor can be formed in one or more metal levels and in one embodiment is in a shape of a comb with multiple fingers. In one embodiment, the non-volatile memory transistor is an NMOS non-volatile memory transistor.

Abstract: The present invention relates to a system and method for adjusting timing of memory access operations to a memory block. In one embodiment, a controller may be in communication with a memory block. The controller may be adapted to adjust timing of a memory access operation to the memory block by extending a portion of a clock pulse to compensate for delay associated with the memory block. The delay may correspond to a predecoder delay or a global decoder delay. The clock pulse may be a read clock pulse or a write clock pulse.

Abstract: The present invention relates to a system and method for processing the read and write operations in a memory architecture. The system processing the read and write operations includes at least one local memory block and a synchronously controlled global controller coupled to the local memory block and adapted to extend the high portion of a clock pulse. The method for processing the read and write operations includes skewing a clock pulse using at least one word line interfacing with the global controller.

Abstract: The present invention relates to a system and method for processing the read and write operations in a memory architecture. The system processing the read and write operations includes at least one local memory block and a synchronously controlled global controller coupled to the local memory block and adapted to extend the high portion of a clock pulse. The method for processing the read and write operations includes skewing a clock pulse using at least one word line interfacing with the global controller.

Abstract: The present invention relates to a system and method for processing the read and write operations in a memory architecture. The system processing the read and write operations includes at least one local memory block and a synchronously controlled global controller coupled to the local memory block and adapted to extend the high portion of a clock pulse. The method for processing the read and write operations includes skewing a clock pulse using at least one word line interfacing with the global controller.

Abstract: An imaging device includes a plurality of photo-diodes that operate as optical pixels arranged in a plurality of columns on a single CMOS substrate. The outputs of the multiple pixel sensors, or photo-diodes, are examined to determine if a one pixel, or a region of pixels are in saturation. If so, then the pixel gain is adjusted to correct or compensate for the image distortion in the region. For example, the gain of the charging amplifier or operational amplifier can be adjusted to correct for saturation. This can be done in real-time since hardware is being tuned for the correction instead of software.

Abstract: According to one exemplary embodiment, a memory cell in a semiconductor chip includes a non-volatile memory transistor, a control gate, and a floating gate. The control gate is capacitively coupled to the floating gate of the non-volatile memory transistor by a metal capacitor. The metal capacitor can be formed in one or more metal levels and in one embodiment is in a shape of a comb with multiple fingers. In one embodiment, the non-volatile memory transistor is an NMOS non-volatile memory transistor.

Abstract: The present invention relates to a system and method for processing the read and write operations in a memory architecture. The system processing the read and write operations includes at least one local memory block and a synchronously controlled global controller coupled to the local memory block and adapted to extend the high portion of a clock pulse. The method for processing the read and write operations includes skewing a clock pulse using at least one word line interfacing with the global controller.

Abstract: The present invention relates to a system and method for processing the read and write operations in a memory architecture. The system processing the read and write operations includes at least one local memory block and a synchronously controlled global controller coupled to the local memory block and adapted to extend the high portion of a clock pulse. The method for processing the read and write operations includes skewing a clock pulse using at least one word line interfacing with the global controller.

Abstract: An imaging device includes a plurality of photo-diodes that operate as optical pixels arranged in a plurality of columns on a single CMOS substrate. The outputs of the multiple pixel sensors, or photo-diodes, are examined to determine if a one pixel, or a region of pixels are in saturation. If so, then the pixel gain is adjusted to correct or compensate for the image distortion in the region. For example, the gain of the charging amplifier or operational amplifier can be adjusted to correct for saturation. This can be done in real-time since hardware is being tuned for the correction instead of software.

Abstract: The present invention relates to a synchronous self timed memory device. The device includes a plurality of memory cells forming a cell array, at least one local decoder interfacing with the cell array, at least one local sense amplifier and at least one local controller. The local sense amplifier interfaces with at least the decoder and cell array, and is adapted to precharge and equalize at least one line coupled thereto. The local controller interfaces with and coordinates the activities of at least the local decoder and sense amplifier.

Abstract: An imaging device includes a plurality of photo-diodes that operate as optical pixels arranged in a plurality of columns on a single CMOS substrate. The outputs of the multiple pixel sensors, or photo-diodes, are examined to determine if a one pixel, or a region of pixels are in saturation. If so, then the pixel gain is adjusted to correct or compensate for the image distortion in the region. For example, the gain of the charging amplifier or operational amplifier can be adjusted to correct for saturation. This can be done in real-time since hardware is being tuned for the correction instead of software.

Abstract: An imaging device includes a plurality of photo-diodes that operate as optical pixels arranged in a plurality of columns on a single CMOS substrate. The outputs of the multiple pixel sensors, or photo-diodes, are examined to determine if a one pixel, or a region of pixels are in saturation. If so, then the pixel gain is adjusted to correct or compensate for the image distortion in the region. For example, the gain of the charging amplifier or operational amplifier can be adjusted to correct for saturation. This can be done in real-time since hardware is being tuned for the correction instead of software.

Abstract: In a digital memory system, systems and methods that control a logical value and an integrity of data represented by charge are provided. In one embodiment, a bit line is coupled to the cell. A voltage generator is arranged to generate a plurality of cell operating voltages varying in response to a voltage control signal. A controller generates a control signal, stores a predetermined one of logical values in a cell by generating a series of operating voltages, transmits the series of operating voltages, and determines whether the predetermined one of the logical values has been stored in the cell in response to a voltage on the bit line. The controller includes a charge integrity estimating module and determines whether the predetermined one of the logical values has been stored in the cell by initiating the operation of the charge integrity estimating module.