Patents by Inventor Ali Argon

Ali Argon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to reduce dislocation density in silicon using stress
    Patent number: 8389999
    Abstract: A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: March 5, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Anthony Buonassisi, Mariana Bertoni, Ali Argon, Sergio Castellanos, Alexandria Fecych, Douglas Powell, Michelle Vogl
  • METHOD TO REDUCE DISLOCATION DENSITY IN SILICON USING STRESS
    Publication number: 20110073869
    Abstract: A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.
    Type: Application
    Filed: September 28, 2010
    Publication date: March 31, 2011
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Anthony Buonassisi, Mariana Bertoni, Ali Argon, Sergio Castellanos, Alexandria Fecych, Douglas Powell, Michelle Vogl