Abstract: Time folding power combining circuits convert a continuous wave into a pulsed wave of greater peak power.

Abstract: A radio transmitter having a RF signal source. A splitter receives an input signal from the signal source and divides that input signal into two output signals. These output signals are fed into two phase shifters. A phase control signal is applied to each phase shifter so that the vector sum of the output signals represents the desired amplitude and phase of the desired transmitted signal. The outputs of both phase shifters are both frequency multiplied and amplified before recombining to form the transmitter output signal.

Abstract: According to various embodiments, a distributed heating transistor includes: a plurality of active regions where transistor action occurs including a heat source; and at least one inactive region where transistor action does not occur and no heat source is present, wherein adjacent active regions are separated by the at least one inactive region. The distributed heating transistor may be configured as field effect transistors (FETs), and bipolar junction transistors (BJTs). Methods for forming the distributed heating transistors are also provided.

Abstract: A ring-shaped transistor includes a set of gates. Each gate of the set is disposed between a corresponding source and a corresponding drain. The set of gates are arranged such that all of the set of gates cannot be aligned with fewer than three imaginary straight lines drawn through the gates, with one of the imaginary straight lines passing only once though each of the set of gates.

Abstract: An amplifier for an integrated circuit has a plurality of ratioed current mirrors connected to each other in a stacked configuration. Each ratio mirror has at least two resistors and at least two bipolar transistors connected to each other via said at least two resistors. Each amplifying transistor, contains a capacitor, and potentially and inductor, to internally match the transistors that make up the amplifying stack. DC, harmonic and s-parameter simulations are performed to provide an optimal impedance for each of the stacked transistors to maximize the RF power output of each stacked layer and the amplifier.

Abstract: According to various embodiments, a distributed heating transistor includes: a plurality of active regions where transistor action occurs including a heat source; and at least one inactive region where transistor action does not occur and no heat source is present, wherein adjacent active regions are separated by the at least one inactive region. The distributed heating transistor may be configured as field effect transistors (FETs), and bipolar junction transistors (BJTs). Methods for forming the distributed heating transistors are also provided.

Abstract: An amplifier for an integrated circuit has a plurality of ratioed current mirrors connected to each other in a stacked configuration. Each ratio mirror has at least two resistors and at least two bipolar transistors connected to each other via said at least two resistors. Each amplifying transistor, contains a capacitor, and potentially and inductor, to internally match the transistors that make up the amplifying stack. DC, harmonic and s-parameter simulations are performed to provide an optimal impedance for each of the stacked transistors to maximize the RF power output of each stacked layer and the amplifier.