Abstract: In one example implementation, the present disclosure provides a modular approach to reducing flicker noise in metal-oxide semiconductor field-effect transistors (MOSFETs) in a device. First, a circuit designer may select one or more surface channel MOSFETs in a device. Then, the one or more surface channel MOSFETs are converted to one or more buried channel MOSFETs to reduce flicker noise. One or more masks may be applied to the channel(s) of the one or more surface channel MOSFETs. The technique maybe used at the input(s) of operational amplifiers, and more particularly, rail-to-rail operational amplifiers, as well as other analog and digital circuits such a mixers, ring oscillators, current mirrors, etc.

Abstract: In one example implementation, the present disclosure provides a modular approach to reducing flicker noise in metal-oxide semiconductor field-effect transistors (MOSFETs) in a device. First, a circuit designer may select one or more surface channel MOSFETs in a device. Then, the one or more surface channel MOSFETs are converted to one or more buried channel MOSFETs to reduce flicker noise. One or more masks may be applied to the channel(s) of the one or more surface channel MOSFETs. The technique maybe used at the input(s) of operational amplifiers, and more particularly, rail-to-rail operational amplifiers, as well as other analog and digital circuits such a mixers, ring oscillators, current mirrors, etc.

Abstract: The specification describes MOS transistors for analog functions which have increased output impedance. The increased output impedance is the result of reduced drain depletion width. This is accomplished without adverse effects on other device parameters. The MOS transistor structures have an implant added to the lightly doped drain (LDD) with a conductivity type opposite to that of the LDD and a doping level higher than the channel doping. The added implant confines the spread of the depletion layer and reduces its width. A relatively small confinement results in a significant increase in output impedance of the device, and a corresponding increase in transistor gain.