Patents by Inventor Ali MUHSIN

Ali MUHSIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12776559
    Abstract: An ultra-wideband radio-frequency bidirectional coupler with power divider/combiner functionality (200A, 200B, 300, 400A, 400B, 400C) for signals with frequency reaching up to 300 GHz, a free propagation region substrate (210) with a pair of opposed edges (240A, 240B), a first group of access ports (P-L1-P-LM) established along the at least one edge of said free propagation region substrate (210); and a second group of access ports (P-R1-P-RM) established along the opposite edge of said free propagation region substrate (210), wherein the first and second groups of access ports (P-L1-P-LM), (P-R1-P-RN) comprise dielectric waveguide structures (DW-L1-DW-LM), (DW-R1-DW-RN) providing a high-pass characteristic interconnect operating over a high frequency range starting from a low cut-off frequency for in the microwave range or in the millimeter-wave range.
    Type: Grant
    Filed: June 28, 2022
    Date of Patent: October 27, 2026
    Assignee: UNIVERSIDAD CARLOS III DE MADRID
    Inventors: Guillermo Carpintero Del Barrio, Alejandro Rivera Lavado, Luis Enrique García Muñoz, Ali Muhsin
  • Publication number: 20240313385
    Abstract: An ultra-wideband radio-frequency bidirectional coupler with power divider/combiner functionality (200A, 200B, 300, 400A, 400B, 400C) for signals with frequency reaching up to 300 GHz, a free propagation region substrate (210) with a pair of opposed edges (240A, 240B), a first group of access ports (P-L1-P-LM) established along the at least one edge of said free propagation region substrate (210); and a second group of access ports (P-R1-P-RM) established along the opposite edge of said free propagation region substrate (210), wherein the first and second groups of access ports (P-L1-P-LM), (P-R1-P-RN) comprise dielectric waveguide structures (DW-L1-DW-LM), (DW-R1-DW-RN) providing a high-pass characteristic interconnect operating over a high frequency range starting from a low cut-off frequency fCL in the microwave range or in the millimeter-wave range.
    Type: Application
    Filed: June 28, 2022
    Publication date: September 19, 2024
    Inventors: Guillermo CARPINTERO DEL BARRIO, Alejandro RIVERA LAVADO, Luis Enrique GARCÍA MUÑOZ, Ali MUHSIN