Abstract: An apparatus for sensing current in a back-to-back MOSFET configuration is provided. The apparatus may include a first MOSFET having a gate terminal, a drain terminal, and a source terminal, a second MOSFET having a source terminal coupled to the source terminal of the first MOSFET, a gate terminal, and a drain terminal, a gate driver circuit including at least one gate drive output terminal to output a gate drive signal to the gate terminals of the first and second MOSFETs, and a shunt resistor coupled between the source terminals of the first and second MOSFETs. The gate driver circuit may include a return terminal coupled to the source terminal of the first MOSFET, and a return current from the gate terminal of the second MOSFET flows through the shunt resistor to the return terminal of the gate driver circuit.

Abstract: The current disclosure relates to the design of an apparatus for enhancing the operation and reliability of high-power multi-chip modules. The disclosed apparatus provides near-complete elimination of high frequency spectral content, while leaving the desired frequency range (1-100 kHz) of the module unaffected. In addition to the suppression of this undesirable high-frequency content, the disclosed apparatus also provides for accurate, galvanically-isolated, high-bandwidth, real-time current measurement, which is essential for some types of power electronics converters. Prior to the disclosure of this apparatus, these two features (ringing suppression and current measurement) have required physically-separate circuits for implementation, which increases the size, weight, and cost of the final implementation. The apparatus disclosed here provides both of these features in simple circuit topology that can be implemented compactly inside the geometry of a multi-chip power module.

Abstract: The current disclosure relates to the design of an apparatus for enhancing the operation and reliability of high-power multi-chip modules, which are used in the design and implementation of power electronics converters. This apparatus is especially useful for modules containing recently-commercialized, high-performance wide band-gap semiconductors such as Silicon Carbide (SiC), which commonly emit undesirable high-frequency ringing and oscillation in the “Near-RF” spectral band between 1-30 MHz. The disclosed apparatus provides near-complete elimination of this high frequency spectral content, while leaving the desired frequency range (1-100 kHz) of the module unaffected. In addition to the suppression of this undesirable high-frequency content, the disclosed apparatus also provides for accurate, galvanically-isolated, high-bandwidth, real-time current measurement, which is essential for some types of power electronics converters.

Abstract: The current disclosure relates to the design of an apparatus for enhancing the operation and reliability of high-power multi-chip modules, which are used in the design and implementation of power electronics converters. This apparatus is especially useful for modules containing recently-commercialized, high-performance wide band-gap semiconductors such as Silicon Carbide (SiC), which commonly emit undesirable high-frequency ringing and oscillation in the “Near-RF” spectral band between 1-30 MHz. The disclosed apparatus provides near-complete elimination of this high frequency spectral content, while leaving the desired frequency range (1-100 kHz) of the module unaffected. In addition to the suppression of this undesirable high-frequency content, the disclosed apparatus also provides for accurate, galvanically-isolated, high-bandwidth, real-time current measurement, which is essential for some types of power electronics converters.

Abstract: The current disclosure relates to the design of an apparatus for enhancing the operation and reliability of high-power multi-chip modules, which are used in the design and implementation of power electronics converters. This apparatus is especially useful for modules containing recently commercialized, high-performance wide band-gap semiconductors such as Silicon Carbide (SiC), which commonly emit undesirable high-frequency ringing and oscillation in the “Near-RF” spectral band between 1-30 MHz. The disclosed apparatus provides near-complete elimination of this high frequency spectral content, while leaving the desired frequency range (1-100 kHz) of the module unaffected. In addition to the suppression of this undesirable high-frequency content, the disclosed apparatus also provides for accurate, galvanically-isolated, high-bandwidth, real-time current measurement, which is essential for some types of power electronics converters.

Abstract: The current disclosure relates to the design of an apparatus for enhancing the operation and reliability of high-power multi-chip modules, which are used in the design and implementation of power electronics converters. This apparatus is especially useful for modules containing recently commercialized, high-performance wide band-gap semiconductors such as Silicon Carbide (SiC), which commonly emit undesirable high-frequency ringing and oscillation in the “Near-RF” spectral band between 1-30 MHz. The disclosed apparatus provides near-complete elimination of this high frequency spectral content, while leaving the desired frequency range (1-100 kHz) of the module unaffected. In addition to the suppression of this undesirable high-frequency content, the disclosed apparatus also provides for accurate, galvanically-isolated, high-bandwidth, real-time current measurement, which is essential for some types of power electronics converters.