Patents by Inventor Alice Pei-Shan Hsieh

Alice Pei-Shan Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160260799
    Abstract: There are disclosed herein implementations of an insulated-gate bipolar transistor (IGBT) having an inter-trench superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes first and second gate trenches extending through a base having the second conductivity type into the drift region, the first and second gate trenches each being bordered by an emitter diffusion having the first conductivity type. In addition, the IGBT includes an inter-trench superjunction structure situated in the drift region between the first and second gate trenches.
    Type: Application
    Filed: December 31, 2015
    Publication date: September 8, 2016
    Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
  • Publication number: 20160260824
    Abstract: There are disclosed herein various implementations of a bipolar semiconductor device having a charge-balanced inter-trench structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes first and second control trenches extending through an inversion region having the second conductivity type into the drift region, each of the first and second control trenches being bordered by a cathode diffusion having the first conductivity type. In addition, the device includes an inter-trench structure situated in the drift region between the first and second control trenches.
    Type: Application
    Filed: December 31, 2015
    Publication date: September 8, 2016
    Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
  • Publication number: 20160260825
    Abstract: There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) having a deep superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes a gate trench extending through a base having the second conductivity type into the drift region. In addition, the IGBT includes a deep superjunction structure situated under the gate trench. The deep superjunction structure includes one or more first conductivity regions having the first conductivity type and two or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the two or more second conductivity regions configured to substantially charge-balance the deep superjunction structure.
    Type: Application
    Filed: December 31, 2015
    Publication date: September 8, 2016
    Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla