Patents by Inventor Alice T. Wang

Alice T. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reduced area intersection between electrode and programming element
    Patent number: 7572666
    Abstract: A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer into a body, a thickness of the first dielectric layer defining a side wall; forming at least one spacer along the side wall of the first dielectric body, the at least one spacer overlying a portion of the contact area; forming a second dielectric layer on the contact area; removing the at least one spacer; and forming a material comprising a second contact point to the contact area. An apparatus comprising a volume of programmable material; a conductor; and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area coupled to the volume of programmable material.
    Type: Grant
    Filed: May 13, 2003
    Date of Patent: August 11, 2009
    Inventors: Charles H. Dennison, Alice T. Wang, Kanaiyalal Chaturbhai Patel, Jenn C. Chow
  • Reduced area intersection between electrode and programming element
    Publication number: 20030203555
    Abstract: A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer into a body, a thickness of the first dielectric layer defining aside wall; forming at least one spacer along the side wall of the first dielectric body, the at least one spacer overlying a portion of the contact area; forming a second dielectric layer on the contact area; removing the at least one spacer; and forming a material comprising a second contact point to the contact area. An apparatus comprising a volume of programmable material; a conductor; and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area coupled to the volume of programmable material.
    Type: Application
    Filed: May 13, 2003
    Publication date: October 30, 2003
    Inventors: Charles H. Dennison, Alice T. Wang, K. C. Patel, Jenn C. Chow
  • Reduced area intersection between electrode and programming element
    Patent number: 6605527
    Abstract: A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer into a body, a thickness of the first dielectric layer defining a side wall; forming at least one spacer along the side wall of the first dielectric body, the at least one spacer overlying a portion of the contact area; forming a second dielectric layer on the contact area; removing the at least one spacer; and forming a material comprising a second contact point to the contact area. An apparatus comprising a volume of programmable material; a conductor; and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area coupled to the volume of programmable material.
    Type: Grant
    Filed: June 30, 2001
    Date of Patent: August 12, 2003
    Assignee: Intel Corporation
    Inventors: Charles H. Dennison, Alice T. Wang, Patel Kanaiyalal Chaturbhai, Jenn C. Chow
  • Reduced area intersection between electrode and programming element
    Publication number: 20030003647
    Abstract: A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer into a body, a thickness of the first dielectric layer defining a side wall; forming at least one spacer along the side wall of the first dielectric body, the at least one spacer overlying a portion of the contact area; forming a second dielectric layer on the contact area; removing the at least one spacer; and forming a material comprising a second contact point to the contact area. An apparatus comprising a volume of programmable material; a conductor; and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area coupled to the volume of programmable material.
    Type: Application
    Filed: June 30, 2001
    Publication date: January 2, 2003
    Inventors: Charles H. Dennison, Alice T. Wang, K.C. Patel, Jenn C. Chow