Patents by Inventor Alina I. Negut

Alina I. Negut has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11283419
    Abstract: According to an aspect, an auto-zero amplifier includes a main amplifier, a secondary amplifier connected to the main amplifier, a plurality of switching including a first switch and a second switch, and a leakage control circuit.
    Type: Grant
    Filed: March 24, 2020
    Date of Patent: March 22, 2022
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Anca Mihaela Dragan, Andrei Enache, Alina I. Negut, Adrian Macarie Tache
  • Publication number: 20210305957
    Abstract: According to an aspect, an auto-zero amplifier includes a main amplifier, a secondary amplifier connected to the main amplifier, a plurality of switching including a first switch and a second switch, and a leakage control circuit.
    Type: Application
    Filed: March 24, 2020
    Publication date: September 30, 2021
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Anca Mihaela DRAGAN, Andrei ENACHE, Alina I. NEGUT, Adrian Macarie TACHE
  • Publication number: 20080238513
    Abstract: A hysteresis circuit including a comparator and capacitive voltage divider circuit. The capacitive voltage divider circuit includes a first capacitor coupled between an input terminal and a positive comparator input, a second capacitor coupled between ground and the positive comparator input, and a third capacitor coupled between the comparator output and positive comparator input. A reference voltage is applied to the negative comparator input. The comparator is powered by the input signal provided on the input terminal. When the voltage on the positive comparator input is less than the reference voltage, the third capacitor is effectively coupled in parallel with the first capacitor. When the voltage on the positive comparator input is greater than the reference voltage, the third capacitor is effectively coupled in parallel with the second capacitor.
    Type: Application
    Filed: March 29, 2007
    Publication date: October 2, 2008
    Applicant: Catalyst Semiconductor, Inc.
    Inventors: Ilie Marian I. Poenaru, Alina I. Negut, Sorin S. Georgescu
  • Patent number: 7324380
    Abstract: A voltage reference circuit provides a reference voltage that can be precisely programmed. The threshold voltage of a first non-volatile memory (NVM) transistor is programmed while coupled in parallel with a second NVM transistor. During programming, one or more capacitors are connected between the floating gate of the first NVM transistor and ground, and one or more capacitors are connected between the floating gate of the second NVM transistor and ground. The first and second NVM transistors are then coupled to a differential amplifier, which is used to generate a single-ended reference voltage in response to the programmed threshold voltage of the first NVM transistor. Bipolar transistors are selectively switched between the various capacitors and ground, thereby providing precise adjustment of the temperature coefficient of the voltage reference circuit.
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: January 29, 2008
    Assignee: Catalyst Semiconductor, Inc.
    Inventors: Alina I. Negut, Sorin S. Georgescu, Sabin A. Eftimie
  • Publication number: 20070189069
    Abstract: A voltage reference circuit provides a reference voltage that can be precisely programmed. The threshold voltage of a first non-volatile memory (NVM) transistor is programmed while coupled in parallel with a second NVM transistor. During programming, one or more capacitors are connected between the floating gate of the first NVM transistor and ground, and one or more capacitors are connected between the floating gate of the second NVM transistor and ground. The first and second NVM transistors are then coupled to a differential amplifier, which is used to generate a single-ended reference voltage in response to the programmed threshold voltage of the first NVM transistor. Bipolar transistors are selectively switched between the various capacitors and ground, thereby providing precise adjustment of the temperature coefficient of the voltage reference circuit.
    Type: Application
    Filed: December 15, 2006
    Publication date: August 16, 2007
    Applicant: Catalyst Semiconductor, Inc.
    Inventors: Alina I. Negut, Sorin S. Georgescu, Sabin A. Eftimie