Abstract: A method of depositing a uniform dielectric film on a silicon substrate comprising flowing a plasma comprising an RF-excited mixture of an inert gas such as argon and silane over the substrate to form a film of porous a-Si.sub.x H.sub.y over the surface of the substrate. The flow of plasma is then discontinued and a flow of a nitrogen or oxygen plasma is substituted therefor. The temperature of the substrate is increased to at least 360.degree. C. to diffuse-out hydrogen from the Si.sub.x H.sub.y film on the substrate, each departing hydrogen atom leaving a dangling Si bond behind which combines with the activated oxygen or nitrogen thereby to form the desired dielectric film of formula Si.sub.x N.sub.y or Si.sub.x O.sub.y.

Abstract: Garnet films suitable for bubble devices which are substituted with bismuth, aluminum or gallium and certain rare earth ions have improved magneto optic properties and can be formed at low temperatures on gadolinium gallium garnet substrates.