Patents by Inventor Aliraeza Nassiri

Aliraeza Nassiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11773488
    Abstract: ALD and p-CVD methods to generate MgB2 and MgB2-containing films in the growth temperature range of 250-300° C. The thermal ALD and p-CVD methods shown herein ensure that the high-temperature-induced roughening, which causes high surface resistances in MgB2 coatings grown by the mentioned conventional techniques, is avoided. The MgB2 and MgB2-containing films exhibit superconductive properties at above 20° K.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: October 3, 2023
    Assignee: UChicago Argonne, LLC
    Inventors: David Joseph Mandia, Angel Yanguas-Gil, Devika Choudhury, Aliraeza Nassiri, Anil U. Mane, Jeffrey W. Elam
  • Publication number: 20200378003
    Abstract: ALD and p-CVD methods to generate MgB2 and MgB2-containing films in the growth temperature range of 250-300° C. The thermal ALD and p-CVD methods shown herein ensure that the high-temperature-induced roughening, which causes high surface resistances in MgB2 coatings grown by the mentioned conventional techniques, is avoided. The MgB2 and MgB2-containing films exhibit superconductive properties at above 20° K.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 3, 2020
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: David Joseph Mandia, Angel Yanguas-Gil, Devika Choudhury, Aliraeza Nassiri, Anil U. Mane, Jeffrey W. Elam