Patents by Inventor Alireza MOJAB
Alireza MOJAB has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 12148819Abstract: Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.Type: GrantFiled: December 14, 2023Date of Patent: November 19, 2024Assignee: IDEAL POWER INC.Inventors: Jiankang Bu, Constantin Bulucea, Alireza Mojab, Jeffrey Knapp, Robert Daniel Brdar
-
Publication number: 20240113115Abstract: A semiconductor die includes: a silicon substrate; a trench gate NMOS transistor formed in a first device region of the silicon substrate; a trench gate PMOS transistor formed in a second device region of the silicon substrate and electrically connected to the trench gate NMOS transistor; and an isolation structure interposed between the first device region and the second device region. Methods of monolithically integrating the trench gate NMOS transistor and the trench gate PMOS transistor in the same semiconductor die are also described.Type: ApplicationFiled: September 30, 2022Publication date: April 4, 2024Inventors: Harsh Naik, Timothy Henson, Honghai He, Robert Haase, Ashita Mirchandani, Alireza Mojab
-
Publication number: 20240113210Abstract: Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.Type: ApplicationFiled: December 14, 2023Publication date: April 4, 2024Applicant: IDEAL POWER INC.Inventors: Jiankang BU, Constantin BULUCEA, Alireza MOJAB, Jeffrey KNAPP, Robert Daniel BRDAR
-
Patent number: 11888030Abstract: Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper-main lead of the transistor, through the transistor, and from a lower-main lead of the transistor to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower-main lead to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower-control lead the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.Type: GrantFiled: November 9, 2022Date of Patent: January 30, 2024Assignee: IDEAL POWER INC.Inventors: John Wood, Alireza Mojab, Daniel Brdar, Ruiyang Yu
-
Patent number: 11881525Abstract: Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.Type: GrantFiled: August 10, 2022Date of Patent: January 23, 2024Assignee: IDEAL POWER INC.Inventors: Jiankang Bu, Constantin Bulucea, Alireza Mojab, Jeffrey Knapp, Robert Daniel Brdar
-
Patent number: 11804835Abstract: Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: injecting charge carriers at a first rate into an upper base of the transistor, the injecting at the first rate results in current flow through the transistor from an upper collector-emitter to a lower collector-emitter, and the current flow results in first voltage drop measured across the upper collector-emitter and the lower collector-emitter; and then, within a predetermined period of time before the end of a first conduction period of the transistor, injecting charge carriers into the upper base at a second rate lower than the first rate, the injecting at the second rate results in second voltage drop measured across the upper collector-emitter and the lower collector-emitter, the second voltage drop higher than the first voltage drop; and then making the transistor non-conductive at the end of the conduction period.Type: GrantFiled: November 19, 2021Date of Patent: October 31, 2023Assignee: IDEAL POWER INC.Inventor: Alireza Mojab
-
Patent number: 11777018Abstract: Layout to reduce current crowding at endpoints. At least one example is a semiconductor device comprising: an emitter region defining an inner boundary in the shape of an obround with parallel sides, and the obround having hemispherical ends each having a radius; a base region having a first end, a second end opposite the first end, and base length, the base region disposed within the obround with the base length parallel to and centered between the parallel sides, the first end spaced apart from the first hemispherical end by a first gap greater than the radius, and the second end spaced apart from the second hemispherical ends by a second gap greater than the radius.Type: GrantFiled: November 10, 2021Date of Patent: October 3, 2023Assignee: IDEAL POWER INC.Inventors: Richard A. Blanchard, Alireza Mojab
-
Publication number: 20230066664Abstract: Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper-main lead of the transistor, through the transistor, and from a lower-main lead of the transistor to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower-main lead to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower-control lead the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.Type: ApplicationFiled: November 9, 2022Publication date: March 2, 2023Applicant: IDEAL POWER INC.Inventors: Alireza MOJAB, Daniel BRDAR, Ruiyang YU
-
Publication number: 20230048984Abstract: Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.Type: ApplicationFiled: August 10, 2022Publication date: February 16, 2023Applicant: IDEAL POWER INC.Inventors: Jiankang BU, Constantin BULUCEA, Alireza MOJAB, Jeffrey KNAPP, Robert Daniel BRDAR
-
Patent number: 11522051Abstract: Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper collector-emitter of the transistor, through the transistor, and from a lower collector-emitter to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower collector-emitter to the lower terminal by opening a lower-main FET and thereby commutating a first shutoff current through a lower base of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.Type: GrantFiled: November 30, 2021Date of Patent: December 6, 2022Assignee: IDEAL POWER INC.Inventors: Alireza Mojab, Daniel Brdar, Ruiyang Yu
-
Patent number: 11496129Abstract: Current sharing among bidirectional double-base bipolar junction transistors. One example is a method comprising: conducting current through a first bidirectional double-base bipolar junction transistor (first B-TRAN); conducting current through a second B-TRAN the second B-TRAN coupled in parallel with the first B-TRAN; measuring a value indicative of conduction of the first B-TRAN, and measuring a value indicative of conduction of the second B-TRAN; and adjusting a current flow through the first B-TRAN, the adjusting responsive to the value indicative of conduction of the first B-TRAN being different than the value indicative of conduction of the second B-TRAN.Type: GrantFiled: June 7, 2021Date of Patent: November 8, 2022Assignee: IDEAL POWER INC.Inventor: Alireza Mojab
-
Patent number: 11411557Abstract: Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: injecting charge carriers at a first rate into an upper base of the transistor, the injecting at the first rate results in current flow through the transistor from an upper collector-emitter to a lower collector-emitter, and the current flow results in first voltage drop measured across the upper collector-emitter and the lower collector-emitter; and then, within a predetermined period of time before the end of a first conduction period of the transistor, injecting charge carriers into the upper base at a second rate lower than the first rate, the injecting at the second rate results in second voltage drop measured across the upper collector-emitter and the lower collector-emitter, the second voltage drop higher than the first voltage drop; and then making the transistor non-conductive at the end of the conduction period.Type: GrantFiled: May 11, 2021Date of Patent: August 9, 2022Assignee: Ideal Power Inc.Inventor: Alireza Mojab
-
Publication number: 20220190115Abstract: Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper collector-emitter of the transistor, through the transistor, and from a lower collector-emitter to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower collector-emitter to the lower terminal by opening a lower-main FET and thereby commutating a first shutoff current through a lower base of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.Type: ApplicationFiled: November 30, 2021Publication date: June 16, 2022Applicant: IDEAL POWER INC.Inventors: Alireza MOJAB, Daniel BRDAR
-
Publication number: 20220157974Abstract: Layout to reduce current crowding at endpoints. At least one example is a semiconductor device comprising: an emitter region defining an inner boundary in the shape of an obround with parallel sides, and the obround having hemispherical ends each having a radius; a base region having a first end, a second end opposite the first end, and base length, the base region disposed within the obround with the base length parallel to and centered between the parallel sides, the first end spaced apart from the first hemispherical end by a first gap greater than the radius, and the second end spaced apart from the second hemispherical ends by a second gap greater than the radius.Type: ApplicationFiled: November 10, 2021Publication date: May 19, 2022Applicant: IDEAL POWER INC.Inventors: Richard A. BLANCHARD, Alireza MOJAB
-
Publication number: 20220077852Abstract: Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: injecting charge carriers at a first rate into an upper base of the transistor, the injecting at the first rate results in current flow through the transistor from an upper collector-emitter to a lower collector-emitter, and the current flow results in first voltage drop measured across the upper collector-emitter and the lower collector-emitter; and then, within a predetermined period of time before the end of a first conduction period of the transistor, injecting charge carriers into the upper base at a second rate lower than the first rate, the injecting at the second rate results in second voltage drop measured across the upper collector-emitter and the lower collector-emitter, the second voltage drop higher than the first voltage drop; and then making the transistor non-conductive at the end of the conduction period.Type: ApplicationFiled: November 19, 2021Publication date: March 10, 2022Applicant: IDEAL POWER INC.Inventor: Alireza MOJAB
-
Publication number: 20210384900Abstract: Current sharing among bidirectional double-base bipolar junction transistors. One example is a method comprising: conducting current through a first bidirectional double-base bipolar junction transistor (first B-TRAN); conducting current through a second B-TRAN the second B-TRAN coupled in parallel with the first B-TRAN; measuring a value indicative of conduction of the first B-TRAN, and measuring a value indicative of conduction of the second B-TRAN; and adjusting a current flow through the first B-TRAN, the adjusting responsive to the value indicative of conduction of the first B-TRAN being different than the value indicative of conduction of the second B-TRAN.Type: ApplicationFiled: June 7, 2021Publication date: December 9, 2021Applicant: IDEAL POWER INC.Inventor: Alireza MOJAB
-
Publication number: 20210359678Abstract: Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: injecting charge carriers at a first rate into an upper base of the transistor, the injecting at the first rate results in current flow through the transistor from an upper collector-emitter to a lower collector-emitter, and the current flow results in first voltage drop measured across the upper collector-emitter and the lower collector-emitter; and then, within a predetermined period of time before the end of a first conduction period of the transistor, injecting charge carriers into the upper base at a second rate lower than the first rate, the injecting at the second rate results in second voltage drop measured across the upper collector-emitter and the lower collector-emitter, the second voltage drop higher than the first voltage drop; and then making the transistor non-conductive at the end of the conduction period.Type: ApplicationFiled: May 11, 2021Publication date: November 18, 2021Applicant: IDEAL POWER INC.Inventor: Alireza MOJAB